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Paul McIntyre
Paul McIntyre
Professor of Materials Science and Engineering, Stanford University
Verified email at stanford.edu - Homepage
Title
Cited by
Cited by
Year
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
A Javey, H Kim, M Brink, Q Wang, A Ural, J Guo, P McIntyre, P McEuen, ...
Nature materials 1 (4), 241-246, 2002
14142002
Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation
YW Chen, JD Prange, S Dühnen, Y Park, M Gunji, CED Chidsey, ...
Nature materials 10 (7), 539-544, 2011
8292011
The properties of ferroelectric films at small dimensions
TM Shaw, S Trolier-McKinstry, PC McIntyre
Annual Review of Materials Science 30 (1), 263-298, 2000
6512000
Germanium nanowire field-effect transistors with and high-κ gate dielectrics
D Wang, Q Wang, A Javey, R Tu, H Dai, H Kim, PC McIntyre, ...
Applied Physics Letters 83 (12), 2432-2434, 2003
6352003
Germanium MOS capacitors incorporating ultrathin high-/spl kappa/gate dielectric
CO Chui, S Ramanathan, BB Triplett, PC McIntyre, KC Saraswat
IEEE Electron Device Letters 23 (8), 473-475, 2002
4332002
Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba2YCu3O7−x on (001) LaAlO3
PC McIntyre, MJ Cima, JA Smith Jr, RB Hallock, MP Siegal, JM Phillips
Journal of Applied Physics 71 (4), 1868-1877, 1992
3371992
Electrical and materials properties of gate dielectrics grown by atomic layer chemical vapor deposition
CM Perkins, BB Triplett, PC McIntyre, KC Saraswat, S Haukka, ...
Applied Physics Letters 78 (16), 2357-2359, 2001
3162001
Germanium nanowire epitaxy: shape and orientation control
H Adhikari, AF Marshall, CED Chidsey, PC McIntyre
Nano letters 6 (2), 318-323, 2006
3012006
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
2992017
Effects of crystallization on the electrical properties of ultrathin dielectrics grown by atomic layer deposition
H Kim, PC McIntyre, KC Saraswat
Applied physics letters 82 (1), 106-108, 2003
2912003
Metalorganic deposition of high‐Jc Ba2YCu3O7−x thin films from trifluoroacetate precursors onto (100) SrTiO3
PC McIntyre, MJ Cima, MF Ng
Journal of applied physics 68 (8), 4183-4187, 1990
2841990
Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes
AG Scheuermann, JP Lawrence, KW Kemp, T Ito, A Walsh, CED Chidsey, ...
Nature materials 15 (1), 99-105, 2016
2602016
Engineering chemically abrupt high-k metal oxide∕ silicon interfaces using an oxygen-gettering metal overlayer
H Kim, PC McIntyre, C On Chui, KC Saraswat, S Stemmer
Journal of Applied Physics 96 (6), 3467-3472, 2004
2582004
A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/dielectric and metal gate
CO Chui, H Kim, D Chi, BB Triplett, PC Mcintyre, KC Saraswat
Digest. International Electron Devices Meeting,, 437-440, 2002
2492002
Atomic layer deposition of high-/spl kappa/dielectric for germanium MOS applications-substrate
CO Chui, H Kim, PC McIntyre, KC Saraswat
IEEE Electron Device Letters 25 (5), 274-276, 2004
240*2004
Border traps in Al2O3/In0. 53Ga0. 47As (100) gate stacks and their passivation by hydrogen anneals
EJ Kim, L Wang, PM Asbeck, KC Saraswat, PC McIntyre
Applied Physics Letters 96 (1), 2010
2292010
Ge-interface engineering with ozone oxidation for low interface-state density
D Kuzum, T Krishnamohan, AJ Pethe, AK Okyay, Y Oshima, Y Sun, ...
IEEE Electron Device Letters 29 (4), 328-330, 2008
2262008
A Distributed Model for Border Traps in MOS Devices
Y Yuan, L Wang, B Yu, B Shin, J Ahn, PC McIntyre, PM Asbeck, ...
IEEE Electron Device Letters 32 (4), 485-487, 2011
2142011
Effects of catalyst material and atomic layer deposited TiO 2 oxide thickness on the water oxidation performance of metal–insulator–silicon anodes
AG Scheuermann, JD Prange, M Gunji, CED Chidsey, PC McIntyre
Energy & Environmental Science 6 (8), 2487-2496, 2013
2132013
Thermal properties of ultrathin hafnium oxide gate dielectric films
MA Panzer, M Shandalov, JA Rowlette, Y Oshima, YW Chen, PC McIntyre, ...
IEEE Electron Device Letters 30 (12), 1269-1271, 2009
2072009
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