| High Breakdown Voltage (−201) -Ga2O3 Schottky Rectifiers J Yang, S Ahn, F Ren, SJ Pearton, S Jang, A Kuramata IEEE Electron Device Letters 38 (7), 906-909, 2017 | 219 | 2017 |
| High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata Applied Physics Letters 110 (19), 2017 | 206 | 2017 |
| Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors G Yang, S Jang, F Ren, SJ Pearton, J Kim ACS applied materials & interfaces 9 (46), 40471-40476, 2017 | 135 | 2017 |
| Suspended black phosphorus nanosheet gas sensors G Lee, S Kim, S Jung, S Jang, J Kim Sensors and Actuators B: Chemical 250, 569-573, 2017 | 132 | 2017 |
| Ternary Pt− Fe− Co alloy electrocatalysts prepared by electrodeposition: elucidating the roles of Fe and Co in the oxygen reduction reaction SJ Hwang, SJ Yoo, S Jang, TH Lim, SA Hong, SK Kim The Journal of physical chemistry c 115 (5), 2483-2488, 2011 | 99 | 2011 |
| Band alignment of Al2O3 with (− 201) β-Ga2O3 PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata Vacuum 142, 52-57, 2017 | 74 | 2017 |
| A comparative study of wet etching and contacts on (2¯ 01) and (010) oriented β-Ga2O3 S Jang, S Jung, K Beers, J Yang, F Ren, A Kuramata, SJ Pearton, KH Baik Journal of Alloys and Compounds 731, 118-125, 2018 | 73 | 2018 |
| Studies of minority carrier diffusion length increase in p-type ZnO: Sb O Lopatiuk-Tirpak, L Chernyak, FX Xiu, JL Liu, S Jang, F Ren, SJ Pearton, ... Journal of applied physics 100 (8), 2006 | 65 | 2006 |
| Platinum-functionalized black phosphorus hydrogen sensors G Lee, S Jung, S Jang, J Kim Applied Physics Letters 110 (24), 2017 | 63 | 2017 |
| Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors CY Chang, EA Douglas, J Kim, L Lu, CF Lo, BH Chu, DJ Cheney, BP Gila, ... IEEE Transactions on Device and Materials reliability 11 (1), 187-193, 2011 | 63 | 2011 |
| Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au PH Carey, J Yang, F Ren, DC Hays, SJ Pearton, S Jang, A Kuramata, ... AIP Advances 7 (9), 2017 | 60 | 2017 |
| Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane BS Kang, J Kim, S Jang, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ... Applied Physics Letters 86 (25), 2005 | 59 | 2005 |
| Band offsets in ITO/Ga2O3 heterostructures PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata Applied Surface Science 422, 179-183, 2017 | 56 | 2017 |
| Carrier concentration dependence of acceptor activation energy in p-type ZnO O Lopatiuk-Tirpak, WV Schoenfeld, L Chernyak, FX Xiu, JL Liu, S Jang, ... Applied physics letters 88 (20), 2006 | 56 | 2006 |
| Band alignment of atomic layer deposited SiO2 and HfSiO4 with β-Ga2O3 PH Carey, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata Japanese Journal of Applied Physics 56 (7), 071101, 2017 | 54 | 2017 |
| Band-edge electroluminescence from N+-implanted bulk ZnO HT Wang, BS Kang, JJ Chen, T Anderson, S Jang, F Ren, HS Kim, YJ Li, ... Applied physics letters 88 (10), 2006 | 49 | 2006 |
| Valence and conduction band offsets in AZO/Ga2O3 heterostructures PH Carey IV, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata Vacuum 141, 103-108, 2017 | 48 | 2017 |
| Highly sensitive nonpolar a-plane GaN based hydrogen diode sensor with textured active area using photo-chemical etching KH Baik, J Kim, S Jang sensors and actuators B: chemical 238, 462-467, 2017 | 47 | 2017 |
| AlGaN/GaN high electron mobility transistor degradation under on-and off-state stress EA Douglas, CY Chang, DJ Cheney, BP Gila, CF Lo, L Lu, R Holzworth, ... Microelectronics Reliability 51 (2), 207-211, 2011 | 46 | 2011 |
| Conduction and valence band offsets of LaAl2O3 with (− 201) β-Ga2O3 PH Carey, F Ren, DC Hays, BP Gila, SJ Pearton, S Jang, A Kuramata Journal of Vacuum Science & Technology B 35 (4), 2017 | 45 | 2017 |
