Hyunsang Hwang
Hyunsang Hwang
POSTECH, Korea
Verified email at postech.ac.kr - Homepage
Title
Cited by
Cited by
Year
Experimental demonstration and tolerancing of a large-scale neural network (165 000 synapses) using phase-change memory as the synaptic weight element
GW Burr, RM Shelby, S Sidler, C Di Nolfo, J Jang, I Boybat, RS Shenoy, ...
IEEE Transactions on Electron Devices 62 (11), 3498-3507, 2015
7352015
Neuromorphic computing using non-volatile memory
GW Burr, RM Shelby, A Sebastian, S Kim, S Kim, S Sidler, K Virwani, ...
Advances in Physics: X 2 (1), 89-124, 2017
6492017
Access devices for 3D crosspoint memory
GW Burr, RS Shenoy, K Virwani, P Narayanan, A Padilla, B Kurdi, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
2902014
Excellent Selector Characteristics of Nanoscalefor High-Density Bipolar ReRAM Applications
M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ...
IEEE Electron Device Letters 32 (11), 1579-1581, 2011
2712011
Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
H Hwang, W Ting, B Maiti, DL Kwong, J Lee
Applied physics letters 57 (10), 1010-1011, 1990
2671990
Organic core-sheath nanowire artificial synapses with femtojoule energy consumption
W Xu, SY Min, H Hwang, TW Lee
Science advances 2 (6), e1501326, 2016
2642016
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ...
Nanotechnology 22 (25), 254023, 2011
2592011
Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems
J Woo, K Moon, J Song, S Lee, M Kwak, J Park, H Hwang
IEEE Electron Device Letters 37 (8), 994-997, 2016
2292016
Reproducible hysteresis and resistive switching in metal--metal heterostructures
R Dong, DS Lee, WF Xiang, SJ Oh, DJ Seong, SH Heo, HJ Choi, ...
Applied physics letters 90 (4), 042107, 2007
2182007
Three‐dimensional integration of organic resistive memory devices
S Song, B Cho, TW Kim, Y Ji, M Jo, G Wang, M Choe, YH Kahng, ...
Advanced Materials 22 (44), 5048-5052, 2010
2122010
Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications
D Lee, H Choi, H Sim, D Choi, H Hwang, MJ Lee, SA Seo, IK Yoo
IEEE electron device letters 26 (10), 719-721, 2005
2032005
Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron
M Chu, B Kim, S Park, H Hwang, M Jeon, BH Lee, BG Lee
IEEE Transactions on Industrial Electronics 62 (4), 2410-2419, 2014
1962014
Rewritable switching of one diode–one resistor nonvolatile organic memory devices
B Cho, TW Kim, S Song, Y Ji, M Jo, H Hwang, GY Jung, T Lee
Advanced Materials 22 (11), 1228-1232, 2010
1902010
Resistance switching of copper doped films for nonvolatile memory applications
D Lee, D Seong, I Jo, F Xiang, R Dong, S Oh, H Hwang
Applied Physics Letters 90 (12), 122104, 2007
1802007
Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides and
S Jeon, H Hwang
Journal of Applied Physics 93 (10), 6393-6395, 2003
1692003
Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems
JW Jang, S Park, GW Burr, H Hwang, YH Jeong
IEEE Electron Device Letters 36 (5), 457-459, 2015
1622015
RRAM-based synapse for neuromorphic system with pattern recognition function
S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ...
2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012
1592012
Electronic system with memristive synapses for pattern recognition
S Park, M Chu, J Kim, J Noh, M Jeon, BH Lee, H Hwang, B Lee, B Lee
Scientific reports 5 (1), 1-9, 2015
1552015
Effect of bilayer structure on switching uniformity and reliability in nonvolatile memory applications
J Lee, EM Bourim, W Lee, J Park, M Jo, S Jung, J Shin, H Hwang
Applied Physics Letters 97 (17), 172105, 2010
1542010
Reversible resistive switching of thin films for nonvolatile memory applications
D Choi, D Lee, H Sim, M Chang, H Hwang
Applied physics letters 88 (8), 082904, 2006
1542006
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