|Excellent Selector Characteristics of Nanoscale for High-Density Bipolar ReRAM Applications|
M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ...
Electron Device Letters, IEEE, 1-3, 2011
|Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device|
K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ...
Nanotechnology 22, 254023, 2011
|Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron|
M Chu, B Kim, S Park, H Hwang, M Jeon, BH Lee, BG Lee
IEEE Transactions on Industrial Electronics 62 (4), 2410-2419, 2014
|Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems|
JW Jang, S Park, GW Burr, H Hwang, YH Jeong
IEEE Electron Device Letters 36 (5), 457-459, 2015
|RRAM-based synapse for neuromorphic system with pattern recognition function|
S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ...
2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012
|Electronic system with memristive synapses for pattern recognition|
S Park, M Chu, J Kim, J Noh, M Jeon, B Hun Lee, H Hwang, B Lee, B Lee
Scientific reports 5 (1), 1-9, 2015
|-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application|
J Shin, I Kim, KP Biju, M Jo, J Park, J Lee, S Jung, W Lee, S Kim, S Park, ...
Journal of Applied Physics 109 (3), 033712, 2011
|Neuromorphic speech systems using advanced ReRAM-based synapse|
S Park, A Sheri, J Kim, J Noh, J Jang, M Jeon, B Lee, BR Lee, BH Lee, ...
2013 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2013
|High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays|
W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ...
ACS nano 6 (9), 8166-8172, 2012
|Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device|
S Park, J Noh, M Choo, AM Sheri, M Chang, YB Kim, CJ Kim, M Jeon, ...
nanotechnology 24 (38), 384009, 2013
|Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications|
J Lee, J Shin, D Lee, W Lee, S Jung, M Jo, J Park, KP Biju, S Kim, S Park, ...
Electron Devices Meeting (IEDM), 2010 IEEE International, 19.5. 1-19.5. 4, 2010
|Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications|
X Liu, SM Sadaf, M Son, J Shin, J Park, J Lee, S Park, H Hwang
Nanotechnology 22, 475702, 2011
|Multibit Operation of -Based ReRAM by Schottky Barrier Height Engineering|
J Park, KP Biju, S Jung, W Lee, J Lee, S Kim, S Park, J Shin, H Hwang
Electron Device Letters, IEEE 32 (4), 476-478, 2011
|Ultrathin (<10nm) Nb2O5/NbO2hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications|
S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ...
2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012
|Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays|
W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ...
2012 Symposium on VLSI Technology (VLSIT), 37-38, 2012
|Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories|
S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ...
Microelectronic Engineering 107, 33-36, 2013
|In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface|
K Baek, S Park, J Park, YM Kim, H Hwang, SH Oh
Nanoscale 9 (2), 582-593, 2017
|Scanning Probe Microscopy|
HT Soh, KW Guarini, CF Quate
New York: Kluwer Academic Publishers, 2001
|Non-volatile memory device and method of operating the same|
T Kim, K Kwack, S Park
US Patent 7,863,673, 2011
|Self-Selective Characteristics of Nanoscale Devices for High-Density ReRAM Applications|
M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ...
IEEE electron device letters 33 (5), 718-720, 2012