| Electronics based on two-dimensional materials G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ... Nature nanotechnology 9 (10), 768-779, 2014 | 3242 | 2014 |
| Low-voltage tunnel transistors for beyond CMOS logic AC Seabaugh, Q Zhang Proceedings of the IEEE 98 (12), 2095-2110, 2010 | 1862 | 2010 |
| Low-subthreshold-swing tunnel transistors Q Zhang, W Zhao, A Seabaugh IEEE Electron Device Letters 27 (4), 297-300, 2006 | 762 | 2006 |
| Tunnel field-effect transistors: State-of-the-art H Lu, A Seabaugh IEEE Journal of the Electron Devices Society 2 (4), 44-49, 2014 | 678 | 2014 |
| High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ... Applied Physics Letters 104 (20), 2014 | 391 | 2014 |
| Direct extraction of the electron tunneling effective mass in ultrathin SiO2 B Brar, GD Wilk, AC Seabaugh Applied physics letters 69 (18), 2728-2730, 1996 | 380 | 1996 |
| Device and architecture outlook for beyond CMOS switches K Bernstein, RK Cavin, W Porod, A Seabaugh, J Welser Proceedings of the IEEE 98 (12), 2169-2184, 2010 | 372 | 2010 |
| Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo Nature communications 6 (1), 6564, 2015 | 357 | 2015 |
| Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ... Applied physics letters 101 (1), 2012 | 309 | 2012 |
| Graphene nanoribbon tunnel transistors Q Zhang, T Fang, H Xing, A Seabaugh, D Jena IEEE Electron Device Letters 29 (12), 1344-1346, 2008 | 297 | 2008 |
| A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter TPE Broekaert, B Brar, JPA van der Wagt, AC Seabaugh, FJ Morris, ... IEEE Journal of Solid-State Circuits 33 (9), 1342-1349, 1998 | 275 | 1998 |
| RTD/HFET low standby power SRAM gain cell JPA Van Der Wagt, AC Seabaugh, EA Beam IEEE Electron Device Letters 19 (1), 7-9, 1998 | 259 | 1998 |
| Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ... Applied Physics Letters 101 (2), 2012 | 222 | 2012 |
| Exfoliated multilayer MoTe2 field-effect transistors S Fathipour, N Ma, WS Hwang, V Protasenko, S Vishwanath, HG Xing, ... Applied Physics Letters 105 (19), 2014 | 206 | 2014 |
| Nanomechanical switches and circuits GA Frazier, AC Seabaugh US Patent 6,548,841, 2003 | 206 | 2003 |
| Room temperature operation of epitaxially grown resonant interband tunneling diodes SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ... Applied Physics Letters 73 (15), 2191-2193, 1998 | 205 | 1998 |
| Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ... 2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012 | 181 | 2012 |
| Silicon oxide resonant tunneling diode structure RM Wallace, AC Seabaugh US Patent 5,606,177, 1997 | 170 | 1997 |
| Realization of a three‐terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor MA Reed, WR Frensley, RJ Matyi, JN Randall, AC Seabaugh Applied physics letters 54 (11), 1034-1036, 1989 | 168 | 1989 |
| AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ... IEEE electron device letters 33 (3), 363-365, 2012 | 164 | 2012 |
