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Shihyun Ahn
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High Breakdown Voltage (−201) -Ga2O3 Schottky Rectifiers
J Yang, S Ahn, F Ren, SJ Pearton, S Jang, A Kuramata
IEEE Electron Device Letters 38 (7), 906-909, 2017
2242017
High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata
Applied Physics Letters 110 (19), 2017
2062017
Effect of front and back gates on ¥â-Ga2O3 nano-belt field-effect transistors
S Ahn, F Ren, J Kim, S Oh, J Kim, MA Mastro, SJ Pearton
Applied Physics Letters 109 (6), 2016
1262016
Temperature-dependent characteristics of Ni/Au and Pt/Au Schottky diodes on ¥â-Ga2O3
S Ahn, F Ren, L Yuan, SJ Pearton, A Kuramata
ECS Journal of Solid State Science and Technology 6 (1), P68, 2017
1062017
Effect of 5 MeV proton irradiation damage on performance of ¥â-Ga2O3 photodetectors
S Ahn, YH Lin, F Ren, S Oh, Y Jung, G Yang, J Kim, MA Mastro, JK Hite, ...
Journal of Vacuum Science & Technology B 34 (4), 2016
892016
Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes
J Yang, S Ahn, F Ren, R Khanna, K Bevlin, D Geerpuram, SJ Pearton, ...
Applied Physics Letters 110 (14), 2017
722017
Inductively coupled plasma etching of bulk, single-crystal Ga2O3
J Yang, S Ahn, F Ren, S Pearton, R Khanna, K Bevlin, D Geerpuram, ...
Journal of Vacuum Science & Technology B 35 (3), 2017
552017
Elevated temperature performance of Si-implanted solar-blind ¥â-Ga2O3 photodetectors
S Ahn, F Ren, S Oh, Y Jung, J Kim, MA Mastro, JK Hite, CR Eddy, ...
Journal of Vacuum Science & Technology B 34 (4), 2016
412016
Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors
J Lee, A Yadav, M Antia, V Zaffino, E Flitsiyan, L Chernyak, J Salzman, ...
Radiation Effects and Defects in Solids 172 (3-4), 250-256, 2017
342017
Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide
S Ahn, BJ Kim, YH Lin, F Ren, SJ Pearton, G Yang, J Kim, II Kravchenko
Journal of Vacuum Science & Technology B 34 (5), 2016
242016
Thermal stability of implanted or plasma exposed deuterium in single crystal Ga2O3
S Ahn, F Ren, E Patrick, ME Law, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (2), Q3026, 2016
232016
Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3
S Ahn, F Ren, E Patrick, ME Law, SJ Pearton, A Kuramata
Applied Physics Letters 109 (24), 2016
212016
Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing
L Liu, Y Xi, S Ahn, F Ren, BP Gila, SJ Pearton, II Kravchenko
Journal of Vacuum Science & Technology B 32 (5), 2014
202014
Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors
BJ Kim, S Ahn, F Ren, SJ Pearton, G Yang, J Kim
Journal of Vacuum Science & Technology B 34 (4), 2016
182016
Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes
BJ Kim, YH Hwang, S Ahn, F Ren, SJ Pearton, J Kim, TS Jang
Journal of Vacuum Science & Technology B 33 (5), 2015
172015
Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors
S Ahn, C Dong, W Zhu, BJ Kim, YH Hwang, F Ren, SJ Pearton, G Yang, ...
Journal of Vacuum Science & Technology B 33 (5), 2015
172015
Extraction of migration energies and role of implant damage on thermal stability of deuterium in Ga2O3
R Sharma, E Patrick, ME Law, S Ahn, F Ren, SJ Pearton, A Kuramata
ECS Journal of Solid State Science and Technology 6 (12), P794, 2017
162017
Optical signature of the electron injection in Ga2O3
J Lee, E Flitsiyan, L Chernyak, S Ahn, F Ren, L Yuna, SJ Pearton, J Kim, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3049, 2016
152016
Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs
YH Hwang, S Ahn, C Dong, W Zhu, BJ Kim, L Le, F Ren, AG Lind, J Dahl, ...
Journal of Vacuum Science & Technology B 33 (3), 2015
102015
Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping
TS Kang, YH Lin, S Ahn, F Ren, BP Gila, SJ Pearton, DJ Cheney
Journal of Vacuum Science & Technology B 34 (1), 2016
72016
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