I-Kang Ding
I-Kang Ding
Verified email at stanford.edu
TitleCited byYear
Efficient CdSe/CdS quantum dot light-emitting diodes using a thermally polymerized hole transport layer
J Zhao, JA Bardecker, AM Munro, MS Liu, Y Niu, IK Ding, J Luo, B Chen, ...
Nano letters 6 (3), 463-467, 2006
5152006
Pore‐Filling of Spiro‐OMeTAD in Solid‐State Dye Sensitized Solar Cells: Quantification, Mechanism, and Consequences for Device Performance
IK Ding, N Tétreault, J Brillet, BE Hardin, EH Smith, SJ Rosenthal, ...
Advanced Functional Materials 19 (15), 2431-2436, 2009
2942009
Hole transport materials with low glass transition temperatures and high solubility for application in solid-state dye-sensitized solar cells
T Leijtens, IK Ding, T Giovenzana, JT Bloking, MD McGehee, A Sellinger
ACS nano 6 (2), 1455-1462, 2012
2352012
Plasmonic dye‐sensitized solar cells
IK Ding, J Zhu, W Cai, SJ Moon, N Cai, P Wang, SM Zakeeruddin, ...
Advanced Energy Materials 1 (1), 52-57, 2011
2312011
The Effect of Hole Transport Material Pore Filling on Photovoltaic Performance in Solid‐State Dye‐Sensitized Solar Cells
J Melas‐Kyriazi, IK Ding, A Marchioro, A Punzi, BE Hardin, GF Burkhard, ...
Advanced Energy Materials 1 (3), 407-414, 2011
1352011
Nanostructured titania− polymer photovoltaic devices made using PFPE-based nanomolding techniques
SS Williams, MJ Hampton, V Gowrishankar, IK Ding, JL Templeton, ...
Chemistry of Materials 20 (16), 5229-5234, 2008
1022008
Deposition of hole-transport materials in solid-state dye-sensitized solar cells by doctor-blading
IK Ding, J Melas-Kyriazi, NL Cevey-Ha, KG Chittibabu, SM Zakeeruddin, ...
Organic electronics 11 (7), 1217-1222, 2010
982010
Effects of self-assembled monolayers on solid-state CdS quantum dot sensitized solar cells
P Ardalan, TP Brennan, HBR Lee, JR Bakke, IK Ding, MD McGehee, ...
ACS nano 5 (2), 1495-1504, 2011
952011
Facile infiltration of semiconducting polymer into mesoporous electrodes for hybrid solar cells
A Abrusci, IK Ding, M Al-Hashimi, T Segal-Peretz, MD McGehee, ...
Energy & Environmental Science 4 (8), 3051-3058, 2011
762011
Laminating solution-processed silver nanowire mesh electrodes onto solid-state dye-sensitized solar cells
BE Hardin, W Gaynor, IK Ding, SB Rim, P Peumans, MD McGehee
Organic Electronics 12 (6), 875-879, 2011
642011
Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells
TP Brennan, P Ardalan, HBR Lee, JR Bakke, IK Ding, MD McGehee, ...
Advanced Energy Materials 1 (6), 1169-1175, 2011
592011
Flexible thin-film tandem solar cells with> 30% efficiency
BM Kayes, L Zhang, R Twist, IK Ding, GS Higashi
IEEE Journal of Photovoltaics 4 (2), 729-733, 2014
552014
TiO2 Conduction Band Modulation with In2O3 Recombination Barrier Layers in Solid-State Dye-Sensitized Solar Cells
TP Brennan, JT Tanskanen, KE Roelofs, JWF To, WH Nguyen, JR Bakke, ...
The Journal of Physical Chemistry C 117 (46), 24138-24149, 2013
292013
The importance of dye chemistry and TiCl 4 surface treatment in the behavior of Al 2 O 3 recombination barrier layers deposited by atomic layer deposition in solid-state dye …
TP Brennan, JR Bakke, IK Ding, BE Hardin, WH Nguyen, R Mondal, ...
Physical Chemistry Chemical Physics 14 (35), 12130-12140, 2012
282012
Photoinduced Electron Transfer in Dye‐Sensitized SnO2 Nanowire Field‐Effect Transistors
HC Wu, YC Huang, IK Ding, CC Chen, YH Yang, CC Tsai, CD Chen, ...
Advanced Functional Materials 21 (3), 474-479, 2011
222011
Parasitic Absorption and Internal Quantum Efficiency Measurements of Solid‐State Dye Sensitized Solar Cells
GY Margulis, BE Hardin, IK Ding, ET Hoke, MD McGehee
Advanced Energy Materials 3 (7), 959-966, 2013
162013
Plasmonic back reflectors: plasmonic dye‐sensitized solar cells
IK Ding, J Zhu, W Cai, SJ Moon, N Cai, P Wang, SM Zakeeruddin, ...
Advanced Energy Materials 1 (1), 51-51, 2011
152011
Nano Lett.
MH Zhao, ZL Wang, SX Mao
122004
Solar cell comprising a plasmonic back reflector and method therefor
IK Ding, J Zhu, Y Cui, MD McGehee
US Patent 8,895,844, 2014
102014
Multi-junction optoelectronic device
BM Kayes, G He, S Spruytte, IK Ding, G Higashi
US Patent 9,768,329, 2017
32017
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Articles 1–20