Seung-Geun Kim
Seung-Geun Kim
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Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse
SG Kim, SH Kim, J Park, GS Kim, JH Park, KC Saraswat, J Kim, HY Yu
ACS nano 13 (9), 10294-10300, 2019
Hysteresis modulation on van der Waals‐based ferroelectric field‐effect transistor by interfacial passivation technique and its application in optic neural networks
H Jeon, SG Kim, J Park, SH Kim, E Park, J Kim, HY Yu
Small 16 (49), 2004371, 2020
Nitrogen-induced filament confinement technique for a highly reliable hafnium-based electrochemical metallization threshold switch and its application to flexible logic circuits
JH Park, SH Kim, SG Kim, K Heo, HY Yu
ACS applied materials & interfaces 11 (9), 9182-9189, 2019
Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior
KH Han, GS Kim, J Park, SG Kim, JH Park, HY Yu
ACS applied materials & interfaces 11 (23), 20949-20955, 2019
Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure
SH Kim, KH Han, GS Kim, SG Kim, J Kim, HY Yu
ACS applied materials & interfaces 11 (6), 6230-6237, 2019
Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor
DG Jin, SH Kim, SG Kim, J Park, E Park, HY Yu
Small 17 (30), 2100242, 2021
An artificial neuron using a bipolar electrochemical metallization switch and its enhanced spiking properties through filament confinement
T Kim, SH Kim, JH Park, J Park, E Park, SG Kim, HY Yu
Advanced Electronic Materials 7 (1), 2000410, 2021
Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors
SG Kim, SH Kim, GS Kim, H Jeon, T Kim, HY Yu
Advanced Science 8 (12), 2100208, 2021
Analysis of the Thermal Degradation Effect on a HfO2-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System
J Park, E Park, SG Kim, DG Jin, HY Yu
ACS Applied Electronic Materials 3 (12), 5584-5591, 2021
Super steep-switching (SS≈ 2 mV/decade) phase-FinFET with Pb (Zr0. 52Ti0. 48) O3 threshold switching device
J Shin, E Ko, J Park, SG Kim, JW Lee, HY Yu, C Shin
Applied Physics Letters 113 (10), 2018
Ultralow Schottky barrier height achieved by using molybdenum disulfide/dielectric stack for source/drain contact
SH Kim, KH Han, E Park, SG Kim, HY Yu
ACS applied materials & interfaces 11 (37), 34084-34090, 2019
Improvement of polarization switching in ferroelectric transistor by interface trap reduction for brain-inspired artificial synapses
DG Jin, SG Kim, H Jeon, EJ Park, SH Kim, JY Kim, HY Yu
Materials Today Nano 22, 100320, 2023
Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain
SG Kim, GS Kim, SH Kim, HY Yu
IEEE Electron Device Letters 39 (12), 1828-1831, 2018
Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor …
S Song, SH Kim, SG Kim, KH Han, H Kim, HY Yu
Journal of Alloys and Compounds 937, 168327, 2023
Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe2 Insertion Layer
MS Kim, E Park, SG Kim, JH Park, SH Kim, KH Han, HY Yu
Advanced Materials Interfaces 10 (7), 2202296, 2023
Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor
SH Hwang, SH Kim, SG Kim, MS Kim, KH Han, S Song, JH Kim, E Park, ...
Materials Today Advances 18, 100367, 2023
Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide
JH Kim, SG Kim, SH Kim, KH Han, J Kim, HY Yu
ACS Applied Materials & Interfaces 15 (26), 31608-31616, 2023
An Electrical Analysis of a Metal-Interlayer-Semiconductor Structure on High-Quality Si1− x Ge x Films for Non-Alloyed Ohmic Contact
SG Kim, GS Kim, SH Kim, SW Kim, J Park, HY Yu
Journal of Nanoscience and Nanotechnology 17 (10), 7323-7326, 2017
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