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Tae Young Lee, Ph. D.
Tae Young Lee, Ph. D.
PA eMRAM, Samsung
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Two-dimensional materials prospects for non-volatile spintronic memories
H Yang, SO Valenzuela, M Chshiev, S Couet, B Dieny, B Dlubak, A Fert, ...
Nature 606 (7915), 663-673, 2022
1552022
4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure
SW Chung, T Kishi, JW Park, M Yoshikawa, KS Park, T Nagase, ...
2016 IEEE International Electron Devices Meeting (IEDM), 27.1. 1-27.1. 4, 2016
1532016
Manufacturable 22nm FD-SOI embedded MRAM technology for industrial-grade MCU and IOT applications
VB Naik, K Lee, K Yamane, R Chao, J Kwon, N Thiyagarajah, NL Chung, ...
2019 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2019
632019
High post-annealing stability in [Pt/Co] multilayers
T Young Lee, D Su Son, S Ho Lim, SR Lee
Journal of Applied Physics 113 (21), 2013
482013
Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers
TY Lee, Y Chan Won, D Su Son, S Ho Lim, SR Lee
Journal of Applied Physics 114 (17), 2013
332013
JEDEC-qualified highly reliable 22nm FD-SOI embedded MRAM for low-power industrial-grade, and extended performance towards automotive-grade-1 applications
VB Naik, K Yamane, TY Lee, J Kwon, R Chao, JH Lim, NL Chung, ...
2020 IEEE International Electron Devices Meeting (IEDM), 11.3. 1-11.3. 4, 2020
292020
Multilayered magnetic thin film stack and nonvolatile memory device having the same
SH Lim, TY Lee, YC Won, SR Lee
US Patent 9,755,140, 2017
202017
World-most energy-efficient MRAM technology for non-volatile RAM applications
TY Lee, JM Lee, MK Kim, JS Oh, JW Lee, HM Jeong, PH Jang, MK Joo, ...
2022 International Electron Devices Meeting (IEDM), 10.7. 1-10.7. 4, 2022
192022
Cobalt (Co) and platinum (Pt)-based multilayer thin film having inverted structure and method for manufacturing same
SH Lim, TY Lee, SR Lee, DS Son
US Patent 9,705,075, 2017
192017
Advanced MTJ stack engineering of STT-MRAM to realize high speed applications
TY Lee, K Yamane, Y Otani, D Zeng, J Kwon, JH Lim, VB Naik, LY Hau, ...
2020 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2020
172020
Strength of perpendicular magnetic anisotropy at bottom and top interfaces in [Pt/Co/Pt] trilayers
TY Lee, YC Won, DS Son, SH Lim, SR Lee
IEEE Magnetics Letters 5, 1-4, 2014
162014
Quantum well thickness dependence of Rashba spin–orbit coupling in the InAs/InGaAs heterostructure
TY Lee, J Chang, MC Hickey, HC Koo, H Kim, SH Han, JS Moodera
Applied Physics Letters 98 (20), 2011
142011
Electronic device
T Lee
US Patent 9,898,426, 2018
112018
Microwave properties and damping in [Pt/Co] multilayers with perpendicular anisotropy
A Caprile, M Pasquale, M Kuepferling, M Coïsson, TY Lee, SH Lim
IEEE Magnetics Letters 5, 1-4, 2014
112014
Relation between switching time distribution and damping constant in magnetic nanostructure
JH Moon, TY Lee, CY You
Scientific Reports 8 (1), 13288, 2018
82018
Magnetic memory device
T Oikawa, T Nagase, EEH Youngmin, D Watanabe, K Sawada, K Yoshino, ...
US Patent App. 15/702,677, 2018
72018
Platinum and cobalt/copper-based multilayer thin film having low saturation magnetization and fabrication method thereof
LIM Sang-Ho, DS Son, T Lee, S Lee
US Patent 10,566,522, 2020
6*2020
Formation of a bcc (001)-textured CoFe layer by the insertion of an FeZr layer in multilayer-based stacks with perpendicular magnetic anisotropy
TY Lee, YC Won, SH Lim, SR Lee
Applied Physics Express 7 (6), 063002, 2014
62014
A reliable tddb lifetime projection model verified using 40mb stt-mram macro at sub-ppm failure rate to realize unlimited endurance for cache applications
VB Naik, K Yamane, JH Lim, TY Lee, J Kwon, B Aein, NL Chung, LY Hau, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
52020
Magnetic immunity guideline for embedded MRAM reliability to realize mass production
TY Lee, K Yamane, LY Hau, R Chao, NL Chung, VB Naik, K Sivabalan, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020
52020
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