Eric M Vogel
Eric M Vogel
Professor of Materials Science and Engineering, Georgia Institute of Technology
Verified email at - Homepage
Cited by
Cited by
Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper
X Li, CW Magnuson, A Venugopal, RM Tromp, JB Hannon, EM Vogel, ...
Journal of the American Chemical Society 133 (9), 2816-2819, 2011
Graphene films with large domain size by a two-step chemical vapor deposition process
X Li, CW Magnuson, A Venugopal, J An, JW Suk, B Han, M Borysiak, ...
Nano letters 10 (11), 4328-4334, 2010
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2
A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ...
Applied Physics Letters 99 (12), 122108, 2011
GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 071901, 2008
First-principles study of metal–graphene interfaces
C Gong, G Lee, B Shan, EM Vogel, RM Wallace, K Cho
Journal of Applied Physics 108 (12), 123711, 2010
Conformal dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics
B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim
Applied Physics Letters 92 (20), 203102, 2008
Contact resistance in few and multilayer graphene devices
A Venugopal, L Colombo, EM Vogel
Applied Physics Letters 96 (1), 013512, 2010
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ...
Applied Physics Letters 94 (16), 162101, 2009
Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition
J Chan, A Venugopal, A Pirkle, S McDonnell, D Hinojos, CW Magnuson, ...
ACS nano 6 (4), 3224-3229, 2012
Technology and metrology of new electronic materials and devices
E Vogel
Nature nanotechnology 2 (1), 25-32, 2007
Modeled tunnel currents for high dielectric constant dielectrics
EM Vogel, KZ Ahmed, B Hornung, WK Henson, PK McLarty, G Lucovsky, ...
IEEE Transactions on Electron Devices 45 (6), 1350-1355, 1998
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
WK Henson, KZ Ahmed, EM Vogel, JR Hauser, JJ Wortman, RD Venables, ...
IEEE Electron Device Letters 20 (4), 179-181, 1999
Half-cycle atomic layer deposition reaction studies of on (100) surfaces
M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ...
Applied Physics Letters 93 (20), 202902, 2008
Controlled Doping of Large‐Area Trilayer MoS2 with Molecular Reductants and Oxidants
A Tarasov, S Zhang, MY Tsai, PM Campbell, S Graham, S Barlow, ...
Advanced Materials 27 (7), 1175-1181, 2015
Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors
SM Koo, MD Edelstein, Q Li, CA Richter, EM Vogel
Nanotechnology 16 (9), 1482, 2005
Hebbian learning in spiking neural networks with nanocrystalline silicon TFTs and memristive synapses
KD Cantley, A Subramaniam, HJ Stiegler, RA Chapman, EM Vogel
IEEE Transactions on Nanotechnology 10 (5), 1066-1073, 2011
Enhanced channel modulation in dual-gated silicon nanowire transistors
SM Koo, Q Li, MD Edelstein, CA Richter, EM Vogel
Nano letters 5 (12), 2519-2523, 2005
Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications
CL Hinkle, EM Vogel, PD Ye, RM Wallace
Current Opinion in Solid State and Materials Science 15 (5), 188-207, 2011
Effective mobility of single-layer graphene transistors as a function of channel dimensions
A Venugopal, J Chan, X Li, CW Magnuson, WP Kirk, L Colombo, RS Ruoff, ...
Journal of Applied Physics 109 (10), 104511, 2011
Characteristics of high-k dielectric using ozone-based atomic layer deposition for dual-gated graphene devices
B Lee, G Mordi, MJ Kim, YJ Chabal, EM Vogel, RM Wallace, KJ Cho, ...
Applied Physics Letters 97 (4), 043107, 2010
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