John L Lyons

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Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraVerified email at mrl.ucsb.edu
Anderson JanottiUniversity of DelawareVerified email at udel.edu
Alexander L. EfrosNaval Research LaboratoryVerified email at nrl.navy.mil
Peter C. SercelCenter for Hybrid Organic Inorganic Semiconductors for EnergyVerified email at caltech.edu
Cyrus E. DreyerStony Brook University and Flatiron CCQVerified email at stonybrook.edu
Joel B VarleyLawrence Livermore National LaboratoryVerified email at llnl.gov
Darshana WickramaratneCenter for Computational Materials Science, US Naval Research LaboratoryVerified email at nrl.navy.mil
Audrius AlkauskasCenter for Physical Sciences and Technology (FTMC), Vilnius, LithuaniaVerified email at ftmc.lt
Michael W. SwiftUS Naval Research LaboratoryVerified email at nrl.navy.mil
Hartwin PeelaersUniversity of KansasVerified email at ku.edu
Roman VaxenburgHoward Hughes Medical InstituteVerified email at janelia.hhmi.org
David J. NorrisETH ZurichVerified email at ethz.ch
Marko J. TadjerNaval Research LaboratoryVerified email at nrl.navy.mil
Minseok ChoiInha UniversityVerified email at inha.ac.kr
Neeraj NepalUS Naval Research LaboratoryVerified email at nrl.navy.mil
Maksym V. KovalenkoETH Zurich and EmpaVerified email at ethz.ch
Rainer MahrtIBM Research Zurich LaboratoryVerified email at zurich.ibm.com
Dr. Georgian NedelcuUniversity of Groningen, Zernike Institute for Advanced MaterialsVerified email at rug.nl
John G. MichopoulosNaval Research Laboratory, Computational Multiphysics System Lab, Code 6394Verified email at nrl.navy.mil
Gabriele RainòETH ZurichVerified email at ethz.ch

John L Lyons

Center for Computational Materials Science, US Naval Research Laboratory

Verified email at nrl.navy.mil - Homepage

materials semiconductors first-principles calculations defects


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Bright triplet excitons in caesium lead halide perovskites MA Becker, R Vaxenburg, G Nedelcu, PC Sercel, A Shabaev, MJ Mehl, ... Nature 553 (7687), 189-193, 2018	914	2018
Carbon impurities and the yellow luminescence in GaN JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 97, 152108, 2010	725	2010
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN JL Lyons, A Janotti, CG Van de Walle Physical Review B 89 (3), 035204, 2014	467	2014
Why nitrogen cannot lead to p-type conductivity in ZnO JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 95, 252105, 2009	467	2009
Shallow versus deep nature of Mg acceptors in nitride semiconductors J Lyons, A Janotti, C G Van de Walle Physical Review Letters 108, 156403, 2012	301	2012
Computationally predicted energies and properties of defects in GaN JL Lyons, CG Van de Walle NPJ Computational Materials 3 (1), 12, 2017	275	2017
First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO A Alkauskas, JL Lyons, D Steiauf, CG Van de Walle Physical review letters 109 (26), 267401, 2012	252	2012
A survey of acceptor dopants for β-Ga2O3 JL Lyons Semiconductor science and technology 33 (5), 05LT02, 2018	220	2018
Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga₂O₃ MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019	214	2019
Hybrid functional calculations of centers in AlN and GaN L Gordon, JL Lyons, A Janotti, CG Van de Walle Physical Review B 89 (8), 085204, 2014	206	2014
Deep acceptors and their diffusion in Ga2O3 H Peelaers, JL Lyons, JB Varley, CG Van de Walle APL Materials 7 (2), 2019	202	2019
Exciton fine structure in perovskite nanocrystals PC Sercel, JL Lyons, D Wickramaratne, R Vaxenburg, N Bernstein, ... Nano letters 19 (6), 4068-4077, 2019	175	2019
First‐principles theory of acceptors in nitride semiconductors JL Lyons, A Alkauskas, A Janotti, CG Van de Walle physica status solidi (b) 252 (5), 900-908, 2015	140	2015
First-principles calculations of point defects for quantum technologies CE Dreyer, A Alkauskas, JL Lyons, A Janotti, CG Van de Walle Annual Review of Materials Research 48 (1), 1-26, 2018	128	2018
Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices M Choi, JL Lyons, A Janotti, CG Van de Walle Applied Physics Letters 102 (14), 2013	120	2013
Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters CE Dreyer, A Alkauskas, JL Lyons, JS Speck, CG Van de Walle Applied Physics Letters 108 (14), 2016	114	2016
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors A Alkauskas, CE Dreyer, JL Lyons, CG Van de Walle Physical Review B 93 (20), 201304, 2016	113	2016
The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2 JL Lyons, A Janotti, CG Van de Walle Microelectronic Engineering, 2011	111	2011
First-principles characterization of native-defect-related optical transitions in ZnO JL Lyons, JB Varley, D Steiauf, A Janotti, CG Van de Walle Journal of Applied Physics 122 (3), 2017	108	2017
Controlling the conductivity of InN CG Van de Walle, JL Lyons, A Janotti physica status solidi (a) 207 (5), 1024-1036, 2010	98	2010

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