| The Impact of Self-Heating on HCI Reliability in High-Performance Digital Circuits H Jiang, SH Shin, X Liu, X Zhang, MA Alam IEEE Electron Device Letters 38 (4), 430-433, 2017 | 47 | 2017 |
| A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review MA Alam, BK Mahajan, YP Chen, W Ahn, H Jiang, SH Shin IEEE Transactions on Electron Devices 66 (11), 4556-4565, 2019 | 41 | 2019 |
| Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETs H Jiang, SH Shin, X Liu, X Zhang, MA Alam 2016 IEEE International Reliability Physics Symposium (IRPS), 2A-3-1-2A-3-7, 2016 | 40 | 2016 |
| Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits W Ahn, SH Shin, C Jiang, H Jiang, MA Wahab, MA Alam Microelectronics Reliability 81, 262-273, 2018 | 38 | 2018 |
| Investigation of self-heating effect on hot carrier degradation in multiple-fin SOI FinFETs H Jiang, X Liu, N Xu, Y He, G Du, X Zhang IEEE Electron Device Letters 36 (12), 1258-1260, 2015 | 37 | 2015 |
| Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs H Jiang, N Xu, B Chen, L Zeng, Y He, G Du, X Liu, X Zhang Semiconductor Science and Technology 29 (11), 115021, 2014 | 32 | 2014 |
| RTN based oxygen vacancy probing method for Ox-RRAM reliability characterization and its application in tail bits P Huang, DB Zhu, C Liu, Z Zhou, Z Dong, H Jiang, WS Shen, LF Liu, ... 2017 IEEE International Electron Devices Meeting (IEDM), 21.4. 1-21.4. 4, 2017 | 28 | 2017 |
| A novel synthesis of Rent's rule and effective-media theory predicts FEOL and BEOL reliability of self-heated ICs W Ahn, H Jiang, SH Shin, MA Alam Electron Devices Meeting (IEDM), 2016 IEEE International, 7.1. 1-7.1. 4, 2016 | 24 | 2016 |
| Enhanced reliability of 7-nm process technology featuring EUV K Choi, HC Sagong, W Kang, H Kim, J Hai, M Lee, B Kim, M Lee, S Lee, ... IEEE Transactions on Electron Devices 66 (12), 5399-5403, 2019 | 19 | 2019 |
| Performance potential of Ge CMOS technology from a material-device-circuit perspective SH Shin, H Jiang, W Ahn, H Wu, W Chung, DY Peide, MA Alam IEEE Transactions on Electron Devices 65 (5), 1679-1684, 2018 | 17 | 2018 |
| Reliability on evolutionary FinFET CMOS technology and beyond K Choi, HC Sagong, M Jin, J Hai, M Lee, T Jeong, MS Yeo, H Shim, ... 2020 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2020 | 11 | 2020 |
| Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs H Jiang, L Yin, Y Li, N Xu, K Zhao, Y He, G Du, X Liu, X Zhang 2015 IEEE International Reliability Physics Symposium, XT. 6.1-XT. 6.4, 2015 | 10 | 2015 |
| Unified self-heating effect model for advanced digital and analog technology and thermal-aware lifetime prediction methodology H Jiang, L Shen, SH Shin, N Xu, G Du, BY Nguyen, O Faynot, MA Alam, ... 2017 Symposium on VLSI Technology, T136-T137, 2017 | 9 | 2017 |
| Investigating of SER in 28 nm FDSOI-Planar and Comparing with SER in Bulk-FinFET T Uemura, B Chung, J Jo, H Jiang, Y Ji, TY Jeong, R Ranjan, Y Park, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 8 | 2020 |
| Impact of self-heating effects on nanoscale Ge p-channel FinFETs with Si substrate L Yin, L Shen, H Jiang, G Du, X Liu Science China Information Sciences 61, 1-9, 2018 | 8 | 2018 |
| Advanced self-heating model and methodology for layout proximity effect in FinFET technology H Jiang, H Sagong, J Kim, H Shim, Y Kim, J Park, T Uemura, Y Ji, T Jeong, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 7 | 2020 |
| Localized layout effect related reliability approach in 8nm FinFETs technology: From transistor to circuit H Jiang, H Sagong, J Kim, J Park, S Shin, S Pae 2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019 | 7 | 2019 |
| Reliability of industrial grade embedded-STT-MRAM Y Ji, H Goo, J Lim, TY Jeong, T Uemura, GR Kim, BI Seo, S Lee, G Park, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-3, 2020 | 5 | 2020 |
| Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions Y Li, H Jiang, Z Lun, Y Wang, P Huang, H Hao, G Du, X Zhang, X Liu Japanese Journal of Applied Physics 55 (4S), 04ED15, 2016 | 4 | 2016 |
| 3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling Y Li, Z Lun, P Huang, Y Wang, H Jiang, G Du, X Liu 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 4 | 2015 |
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue UniversityVerified email at purdue.edu
