Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication HY Chen, S Brivio, CC Chang, J Frascaroli, TH Hou, B Hudec, M Liu, H Lv, ... Journal of Electroceramics 39, 21-38, 2017 | 101 | 2017 |
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices S Brivio, J Frascaroli, S Spiga Applied Physics Letters 107 (2), 2015 | 96 | 2015 |
Resistive switching in high-density nanodevices fabricated by block copolymer self-assembly J Frascaroli, S Brivio, F Ferrarese Lupi, G Seguini, L Boarino, M Perego, ... ACS nano 9 (3), 2518-2529, 2015 | 80 | 2015 |
Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing J Frascaroli, S Brivio, E Covi, S Spiga Scientific reports 8 (1), 7178, 2018 | 69 | 2018 |
Effect of Al doping on the retention behavior of HfO2 resistive switching memories J Frascaroli, FG Volpe, S Brivio, S Spiga Microelectronic Engineering 147, 104-107, 2015 | 64 | 2015 |
Extended memory lifetime in spiking neural networks employing memristive synapses with nonlinear conductance dynamics S Brivio, D Conti, MV Nair, J Frascaroli, E Covi, C Ricciardi, G Indiveri, ... Nanotechnology 30 (1), 015102, 2018 | 45 | 2018 |
Role of Al doping in the filament disruption in HfO2 resistance switches S Brivio, J Frascaroli, S Spiga Nanotechnology 28 (39), 395202, 2017 | 44 | 2017 |
Thermodynamic stability of high phosphorus concentration in silicon nanostructures M Perego, G Seguini, E Arduca, J Frascaroli, D De Salvador, ... Nanoscale 7 (34), 14469-14475, 2015 | 41 | 2015 |
Spike-driven threshold-based learning with memristive synapses and neuromorphic silicon neurons E Covi, R George, J Frascaroli, S Brivio, C Mayr, H Mostafa, G Indiveri, ... Journal of Physics D: Applied Physics 51 (34), 344003, 2018 | 34 | 2018 |
Ozone-Based Sequential Infiltration Synthesis of Al2O3 Nanostructures in Symmetric Block Copolymer J Frascaroli, E Cianci, S Spiga, G Seguini, M Perego ACS applied materials & interfaces 8 (49), 33933-33942, 2016 | 30 | 2016 |
Stimulated ionic telegraph noise in filamentary memristive devices S Brivio, J Frascaroli, E Covi, S Spiga Scientific reports 9 (1), 6310, 2019 | 27 | 2019 |
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide M Mastromatteo, E Arduca, E Napolitani, G Nicotra, D De Salvador, ... Surface and Interface Analysis 46 (S1), 393-396, 2014 | 25 | 2014 |
Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition J Frascaroli, G Seguini, E Cianci, D Saynova, J Van Roosmalen, ... physica status solidi (a) 210 (4), 732-736, 2013 | 23 | 2013 |
Analog HfO2-RRAM switches for neural networks E Covi, S Brivio, J Frascaroli, M Fanciulli, S Spiga ECS Transactions 75 (32), 85, 2017 | 16 | 2017 |
Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals M Mastromatteo, D De Salvador, E Napolitani, E Arduca, G Seguini, ... Journal of Materials Chemistry C 4 (16), 3531-3539, 2016 | 16 | 2016 |
Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO2 substrates J Frascaroli, G Seguini, S Spiga, M Perego, L Boarino Nanotechnology 26 (21), 215301, 2015 | 12 | 2015 |
Electrical AFM for the analysis of resistive switching S Brivio, J Frascaroli, MH Lee Electrical Atomic Force Microscopy for Nanoelectronics, 205-229, 2019 | 6 | 2019 |
Automatic defect detection in epitaxial layers by micro photoluminescence imaging J Frascaroli, M Tonini, S Colombo, L Livellara, L Mariani, P Targa, ... IEEE Transactions on Semiconductor Manufacturing 35 (3), 540-545, 2022 | 4 | 2022 |
Internal and External Gettering of Iron Contamination in Power Technologies J Frascaroli, P Monge Roffarello, I Mica physica status solidi (a) 218 (23), 2100206, 2021 | 2 | 2021 |
Impact of the Substrate Specifications on the Extended Defects Induced by the Deep Trench Isolation I Mica, PM Roffarello, D Dutartre, M Basso, A Abbadie, J Frascaroli, ... ECS transactions 102 (4), 29, 2021 | 2 | 2021 |