| Van der Waals junction field effect transistors with both n-and p-channel transition metal dichalcogenides JY Lim, M Kim, Y Jeong, KR Ko, S Yu, HG Shin, JY Moon, YJ Choi, Y Yi, ... npj 2D Materials and Applications 2 (1), 37, 2018 | 73 | 2018 |
| Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes H Kwon, S Garg, JH Park, Y Jeong, S Yu, SM Kim, P Kung, S Im npj 2D Materials and Applications 3 (1), 9, 2019 | 48 | 2019 |
| Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel S Park, Y Jeong, HJ Jin, J Park, H Jang, S Lee, W Huh, H Cho, HG Shin, ... ACS nano 14 (9), 12064-12071, 2020 | 41 | 2020 |
| 2D MoSe2 Transistor with Polymer‐Brush/Channel Interface Y Jeong, JH Park, J Ahn, JY Lim, E Kim, S Im Advanced Materials Interfaces 5 (19), 1800812, 2018 | 36 | 2018 |
| Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2 Transistors Y Cho, JH Park, M Kim, Y Jeong, S Yu, JY Lim, Y Yi, S Im Nano letters 19 (4), 2456-2463, 2019 | 29 | 2019 |
| Fully Transparent p‐MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium‐Tin‐Oxide Source/Drain Y Cho, JH Park, M Kim, Y Jeong, J Ahn, T Kim, H Choi, Y Yi, S Im Advanced Functional Materials 28 (39), 1801204, 2018 | 28 | 2018 |
| High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2 KT Kim, HJ Jin, W Choi, Y Jeong, HG Shin, Y Lee, K Kim, S Im Advanced Functional Materials 31 (21), 2010303, 2021 | 26 | 2021 |
| Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection HS Lee, JY Lim, S Yu, Y Jeong, S Park, K Oh, S Hong, S Yang, CH Lee, ... Advanced Optical Materials 7 (19), 1900768, 2019 | 23 | 2019 |
| Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics AT Hoang, L Hu, BJ Kim, TTN Van, KD Park, Y Jeong, K Lee, S Ji, J Hong, ... Nature Nanotechnology 18 (12), 1439-1447, 2023 | 22 | 2023 |
| Dynamic oscillation via negative differential resistance in type III junction organic/two‐dimensional and oxide/two‐dimensional transition metal dichalcogenide diodes W Choi, S Hong, Y Jeong, Y Cho, HG Shin, JH Park, Y Yi, S Im Advanced Functional Materials 31 (9), 2009436, 2021 | 21 | 2021 |
| Integrated advantages from perovskite photovoltaic cell and 2D MoTe2 transistor towards self-power energy harvesting and photosensing Y Jeong, D Shin, JH Park, J Park, Y Yi, S Im Nano Energy 63, 103833, 2019 | 21 | 2019 |
| Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions Y Jeong, HJ Lee, J Park, S Lee, HJ Jin, S Park, H Cho, S Hong, T Kim, ... npj 2D Materials and Applications 6 (1), 23, 2022 | 20 | 2022 |
| Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel Y Jeong, HJ Jin, JH Park, Y Cho, M Kim, S Hong, W Jo, Y Yi, S Im Advanced Functional Materials 30 (7), 1908210, 2020 | 16 | 2020 |
| Quaternary NAND Logic and Complementary Ternary Inverter with p‐MoTe2/n‐MoS2 Heterostack Channel Transistors S Park, HJ Lee, W Choi, HJ Jin, H Cho, Y Jeong, S Lee, K Kim, S Im Advanced Functional Materials 32 (13), 2108737, 2022 | 14 | 2022 |
| Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels S Yu, Y Cho, JY Lim, H Kwon, Y Jeong, J Kim, H Cheong, S Im Advanced Electronic Materials 5 (12), 1900730, 2019 | 12 | 2019 |
| 2D MoS2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps LJ Widiapradja, T Nam, Y Jeong, HJ Jin, Y Lee, K Kim, S Lee, H Kim, ... Advanced Electronic Materials 7 (5), 2100074, 2021 | 9 | 2021 |
| High-performance van der Waals junction field-effect transistors utilizing organic molecule/transition metal dichalcogenide interface HG Shin, D Kang, Y Jeong, K Kim, Y Cho, J Park, S Hong, Y Yi, S Im ACS nano 14 (11), 15646-15653, 2020 | 8 | 2020 |
| Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices Y Shin, J Kwon, Y Jeong, K Watanabe, T Taniguchi, S Im, GH Lee Small 18 (28), 2200882, 2022 | 7 | 2022 |
| Self-Assembled TaOX/2H-TaS2 as a van der Waals Platform of a Multilevel Memristor Circuit Integrated with a β-Ga2O3 Transistor KT Kim, T Kim, Y Jeong, S Park, J Kim, H Cho, SK Cha, YS Kim, H Bae, ... ACS nano 17 (4), 3666-3675, 2023 | 2 | 2023 |
| Performance enhancement of multilayer MoS2 phototransistors via photoresist encapsulation H Sunwoo, Y Jeong, S Im, W Choi Current Applied Physics 41, 14-17, 2022 | 2 | 2022 |
