| Phase patterning for ohmic homojunction contact in MoTe2 S Cho, S Kim, JH Kim, J Zhao, J Seok, DH Keum, J Baik, DH Choe, ... Science 349 (6248), 625-628, 2015 | 1085 | 2015 |
| Bandgap opening in few-layered monoclinic MoTe2 DH Keum†, S Cho†, JH Kim, DH Choe, HJ Sung, M Kan, H Kang, ... Nature Physics 11 (6), 482-486, 2015 | 980 | 2015 |
| Understanding topological phase transition in monolayer transition metal dichalcogenides DH Choe, HJ Sung, KJ Chang Physical Review B 93 (12), 125109, 2016 | 110 | 2016 |
| Long-Range Lattice Engineering of MoTe2 by 2D Electride S Kim, S Song, J Park, HS Yu, S Cho, D Kim, J Baik, DH Choe, KJ Chang, ... Nano Letters 17 (6), 3363, 2017 | 84 | 2017 |
| Bandgap widening of phase quilted, 2D MoS2 by oxidative intercalation SH Song†, BH Kim†, DH Choe, J Kim, DC Kim, DJ Lee, JM Kim, ... Advanced Materials 27 (20), 3152-3158, 2015 | 81 | 2015 |
| Traditional Semiconductors in the Two-Dimensional Limit MC Lucking†, W Xie†, DH Choe, D West, TM Lu, SB Zhang Physical Review Letters 120 (8), 086101, 2018 | 66 | 2018 |
| Machine Learning Augmented Discovery of Chalcogenide Double Perovskites for Photovoltaics M L. Agiorgousis, YY Sun, DH Choe, D West, S Zhang Advanced Theory and Simulations 2 (5), 1800173, 2019 | 65 | 2019 |
| Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls DH Choe, S Kim, T Moon, S Jo, H Bae, SG Nam, YS Lee, J Heo Materials Today 50, 8-15, 2021 | 50 | 2021 |
| Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride S Cho, SH Kang, HS Yu, HW Kim, W Ko, SW Hwang, WH Han, DH Choe, ... 2D Materials 4 (2), 021030, 2017 | 46 | 2017 |
| Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics JY Park†, DH Choe†, DH Lee†, GT Yu, K Yang, SH Kim, GH Park, ... Advanced Materials, 2204904, 2022 | 45 | 2022 |
| Carrier multiplication in van der Waals layered transition metal dichalcogenides JH Kim, MR Bergren, JC Park, S Adhikari, M Lorke, T Frauenheim, ... Nature communications 10 (1), 5488, 2019 | 45 | 2019 |
| Photoinduced Vacancy Ordering and Phase Transition in MoTe2 C Si, D Choe, W Xie, H Wang, Z Sun, J Bang, S Zhang Nano Letters 19 (6), 3612, 2019 | 45 | 2019 |
| Band Alignment and the Built-in Potential of Solids DH Choe, D West, S Zhang Physical Review Letters 121 (19), 196802, 2018 | 34 | 2018 |
| Sub-ns polarization switching in 25nm FE FinFET toward post CPU and spatial-energetic mapping of traps for enhanced endurance H Bae†, SG Nam†, T Moon, Y Lee, S Jo, DH Choe, S Kim, KH Lee, J Heo 2020 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2020 | 29 | 2020 |
| Electronic structure and transport properties of hydrogenated graphene and graphene nanoribbons DH Choe, J Bang, KJ Chang New Journal of Physics 12 (12), 125005, 2010 | 29 | 2010 |
| Unveiling the origin of robust ferroelectricity in sub-2 nm hafnium zirconium oxide films H Lee†, DH Choe†, S Jo†, JH Kim, HH Lee, HJ Shin, Y Park, S Kang, ... ACS Applied Materials & Interfaces 13 (30), 36499-36506, 2021 | 27 | 2021 |
| The effects of surface polarity and dangling bonds on the electronic properties of monolayer and bilayer MoS2 on α-quartz HJ Sung, DH Choe, KJ Chang New Journal of physics 16 (11), 113055, 2014 | 25 | 2014 |
| Universal Conductance Fluctuation in Two-Dimensional Topological Insulators DH Choe, KJ Chang Scientific Reports 5, 10997, 2015 | 23 | 2015 |
| Roadmap on ferroelectric hafnia-and zirconia-based materials and devices JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ... APL Materials 11 (8), 2023 | 18 | 2023 |
| Negative differential capacitance in ultrathin ferroelectric hafnia S Jo†, H Lee†, DH Choe, JH Kim, YS Lee, O Kwon, S Nam, Y Park, K Kim, ... Nature Electronics, 1-8, 2023 | 12 | 2023 |
Kee Joo ChangKorea Advanced Institute of Science and Technologykaist.ac.kr의 이메일 확인됨
