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Jinwook Burm
Jinwook Burm
sogang.ac.kr의 이메일 확인됨
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Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
M Asif Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm, MS Shur
Applied Physics Letters 65 (9), 1121-1123, 1994
5031994
Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 C
MA Khan, MS Shur, JN Kuznia, Q Chen, J Burm, W Schaff
Applied Physics Letters 66 (9), 1083-1085, 1995
3611995
Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency
MA Khan, Q Chen, MS Shur, BT Dermott, JA Higgins, J Burm, W Schaff, ...
Electronics Letters 32 (4), 357-358, 1996
1541996
CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
MA Khan, Q Chen, MS Shur, BT Dermott, JA Higgins, J Burm, WJ Schaff, ...
IEEE Electron Device Letters 17 (12), 584-585, 1996
1481996
Ultra-low resistive ohmic contacts on GaN using Si implantation
J Burm, K Chu, WA Davis, WJ Schaff, LF Eastman, TJ Eustis
Applied physics letters 70 (4), 464-466, 1997
1401997
GaN based heterostructure for high power devices
MA Khan, Q Chen, MS Shur, BT Dermott, JA Higgins, J Burm, WJ Schaff, ...
Solid-State Electronics 41 (10), 1555-1559, 1997
991997
75 Å GaN channel modulation doped field effect transistors
J Burm, WJ Schaff, LF Eastman, H Amano, I Akasaki
Applied physics letters 68 (20), 2849-2851, 1996
851996
0.12-μm gate III-V nitride HFET's with high contact resistances
J Burm, K Chu, WJ Schaff, LF Eastman, MA Khan, Q Chen, JW Yang, ...
IEEE Electron Device Letters 18 (4), 141-143, 1997
841997
Optimization of high-speed metal-semiconductor-metal photodetectors
J Burm, KI Litvin, WJ Schaff, LF Eastman
IEEE photonics technology letters 6 (6), 722-724, 1994
771994
Low-frequency gain in MSM photodiodes due to charge accumulation and image force lowering
J Burm, LF Eastman
IEEE Photonics Technology Letters 8 (1), 113-115, 1996
691996
Microwave performance of 0.25 µm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
Q Chen, R Gaska, MA Khan, MS Shur, A Ping, I Adesida, J Burm, ...
Electronics Letters 33 (7), 637-639, 1997
571997
Cmos image sensor
BH Kim, J Burm, WT Choi
US Patent App. 12/781,739, 2011
532011
Recessed gate GaN MODFETs
J Burm, WJ Schaff, GH Martin, LF Eastman, H Amano, I Akasaki
Solid-State Electronics 41 (2), 247-250, 1997
521997
High-frequency, high-efficiency MSM photodetectors
J Burm, KI Litvin, DW Woodard, WJ Schaff, P Mandeville, MA Jaspan, ...
IEEE journal of quantum electronics 31 (8), 1504-1509, 1995
471995
Dark current reduction in APD with BCB passivation
HS Kim, JH Choi, HM Bang, Y Jee, SW Yun, J Burm, MD Kim, AG Choo
Electronics Letters 37 (7), 1, 2001
442001
High frame-rate VGA CMOS image sensor using non-memory capacitor two-step single-slope ADCs
J Lee, H Park, B Song, K Kim, J Eom, K Kim, J Burm
IEEE Transactions on Circuits and Systems I: Regular Papers 62 (9), 2147-2155, 2015
402015
A 0.18-/spl mu/m cmos 10-gb/s dual-mode 10-pam serial link transceiver
B Song, K Kim, J Lee, J Burm
IEEE Transactions on Circuits and Systems I: Regular Papers 60 (2), 457-468, 2012
372012
An ultralow power time-domain temperature sensor with time-domain delta–sigma TDC
W Song, J Lee, N Cho, J Burm
IEEE Transactions on Circuits and Systems II: Express Briefs 64 (10), 1117-1121, 2015
342015
Suppression of avalanche multiplication at the periphery of diffused junction by floating guard rings in a planar InGaAs-InP avalanche photodiode
SR Cho, SK Yang, JS Ma, SD Lee, JS Yu, AG Choo, TI Kim, J Burm
IEEE Photonics Technology Letters 12 (5), 534-536, 2000
302000
An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances
J Burm, WJ Schaff, LF Eastman, H Amano, I Akasaki
IEEE Transactions on Electron Devices 44 (5), 906-907, 1997
281997
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