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Robert O'Connor
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Ubiquitous relaxation in BTI stressing—New evaluation and insights
B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
2592008
Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability
T Grasser, B Kaczer, P Hehenberger, W Gos, R O'connor, H Reisinger, ...
2007 IEEE International Electron Devices Meeting, 801-804, 2007
1442007
Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT~ 1nm) SiON films
B Kaczer, R Degraeve, R O'Connor, P Roussel, G Groeseneken
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 713-716, 2004
492004
Recyclability of stainless steel (316 L) powder within the additive manufacturing process
NE Gorji, R O'Connor, A Mussatto, M Snelgrove, PGM González, ...
Materialia 8, 100489, 2019
462019
SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection
R O'Connor, L Pantisano, R Degraeve, T Kauerauf, B Kaczer, PJ Roussel, ...
2008 IEEE International Reliability Physics Symposium, 324-329, 2008
312008
A new method for assessing the recyclability of powders within Powder Bed Fusion process
NE Gorji, P Saxena, M Corfield, A Clare, JP Rueff, J Bogan, ...
Materials Characterization 161, 110167, 2020
302020
Methodologies for sub-1nm EOT TDDB evaluation
T Kauerauf, R Degraeve, LĹ Ragnarsson, P Roussel, S Sahhaf, ...
2011 International Reliability Physics Symposium, 2A. 2.1-2A. 2.10, 2011
242011
Comprehensive assessment of spatter material generated during selective laser melting of stainless steel
MA Obeidi, A Mussatto, R Groarke, RK Vijayaraghavan, A Conway, ...
Materials Today Communications 25, 101294, 2020
212020
Photoemission study of the identification of Mn silicate barrier formation on carbon containing low-κ dielectrics
J Bogan, AP McCoy, R O’Connor, P Casey, C Byrne, G Hughes
Microelectronic engineering 130, 46-51, 2014
202014
Reliability of HfSiON gate dielectrics
R O'Connor, G Hughes, R Degraeve, B Kaczer, T Kauerauf
Semiconductor science and technology 20 (1), 68, 2004
202004
On the use of (3-trimethoxysilylpropyl) diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers
A Brady-Boyd, R O’Connor, S Armini, V Selvaraju, G Hughes, J Bogan
Applied Surface Science 427, 260-266, 2018
182018
Low voltage stress-induced leakage current in 1.4–2.1 nm SiON and HfSiON gate dielectric layers
R O'Connor, S McDonnell, G Hughes, R Degraeve, T Kauerauf
Semiconductor science and technology 20 (8), 668, 2005
182005
Degradation and breakdown characteristics of thin MgO dielectric layers
R O’Connor, G Hughes, P Casey, SB Newcomb
Journal of Applied Physics 107 (2), 024501, 2010
172010
XPS, XRD, and SEM characterization of the virgin and recycled metallic powders for 3D printing applications
NE Gorji, R O’Connor, D Brabazon
IOP Conference Series: Materials Science and Engineering 591 (1), 012016, 2019
162019
Weibull slope and voltage acceleration of ultra-thin (1.1–1.45 nm EOT) oxynitrides
R O'Connor, R Degraeve, B Kaczer, A Veloso, G Hughes, G Groeseneken
Microelectronic engineering 72 (1-4), 61-65, 2004
162004
Area-selective ALD of Ru on nanometer-scale Cu lines through dimerization of amino-functionalized alkoxy silane passivation films
I Zyulkov, V Madhiwala, E Voronina, M Snelgrove, J Bogan, R O’Connor, ...
ACS Applied Materials & Interfaces 12 (4), 4678-4688, 2020
152020
X-ray tomography, AFM and nanoindentation measurements for recyclability analysis of 316L powders in 3D printing process
NE Gorji, R O’Connor, D Brabazon
Procedia Manufacturing 47, 1113-1116, 2020
142020
Nucleation and adhesion of ultra-thin copper films on amino-terminated self-assembled monolayers
J Bogan, A Brady-Boyd, S Armini, R Lundy, V Selvaraju, R O'Connor
Applied Surface Science 462, 38-47, 2018
142018
Hard x-ray photoelectron spectroscopy study of copper formation by metal salt inclusion in a polymer film
M Snelgrove, PG Mani-González, J Bogan, R Lundy, JP Rueff, G Hughes, ...
Journal of Physics D: Applied Physics 52 (43), 435301, 2019
132019
Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications
A Veloso, FN Cubaynes, A Rothschild, S Mertens, R Degraeve, ...
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
132003
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