|Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors|
KH Ji, JI Kim, HY Jung, SY Park, R Choi, UK Kim, CS Hwang, D Lee, ...
Applied Physics Letters 98 (10), 103509, 2011
|RRAM-based synapse for neuromorphic system with pattern recognition function|
S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ...
2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012
|High Current Density and Nonlinearity Combination of Selection Device Based on TaO x/TiO2/TaO x Structure for One Selector–One Resistor Arrays|
W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ...
Acs Nano 6 (9), 8166-8172, 2012
|Diode-less nano-scale ZrOx/HfOxRRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications|
J Lee, J Shin, D Lee, W Lee, S Jung, M Jo, J Park, KP Biju, S Kim, S Park, ...
2010 International Electron Devices Meeting, 19.5. 1-19.5. 4, 2010
|Threshold selector with high selectivity and steep slope for cross-point memory array|
J Song, J Woo, A Prakash, D Lee, H Hwang
IEEE Electron Device Letters 36 (7), 681-683, 2015
|Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays|
W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ...
2012 Symposium on VLSI Technology (VLSIT), 37-38, 2012
|Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode|
E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ...
2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013
|Ultrathin (<10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications|
S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ...
2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012
|Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications|
X Liu, SM Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang
IEEE Electron Device Letters 33 (2), 236-238, 2011
|Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application|
E Cha, J Park, J Woo, D Lee, A Prakash, H Hwang
Applied Physics Letters 108 (15), 153502, 2016
|Threshold-switching characteristics of a nanothin-NbO 2-layer-based Pt/NbO 2/Pt stack for use in cross-point-type resistive memories|
S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ...
Microelectronic Engineering 107, 33-36, 2013
|Self-Selective Characteristics of Nanoscale Devices for High-Density ReRAM Applications|
M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ...
IEEE Electron Device Letters 33 (5), 718-720, 2012
|Complementary resistive switching in niobium oxide-based resistive memory devices|
X Liu, SM Sadaf, S Park, S Kim, E Cha, D Lee, GY Jung, H Hwang
IEEE electron device letters 34 (2), 235-237, 2013
|Noise-Analysis-Based Model of Filamentary Switching ReRAM With Stacks|
D Lee, J Lee, M Jo, J Park, M Siddik, H Hwang
IEEE Electron Device Letters 32 (7), 964-966, 2011
|Oxide based nanoscale analog synapse device for neural signal recognition system|
D Lee, J Park, K Moon, J Jang, S Park, M Chu, J Kim, J Noh, M Jeon, ...
2015 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2015
|Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices|
S Kim, D Lee, J Park, S Jung, W Lee, J Shin, J Woo, G Choi, H Hwang
Nanotechnology 23 (32), 325702, 2012
|Structurally Engineered Stackable and Scalable 3D Titanium‐Oxide Switching Devices for High‐Density Nanoscale Memory|
D Lee, J Park, J Park, J Woo, E Cha, S Lee, K Moon, J Song, Y Koo, ...
Advanced Materials 27 (1), 59-64, 2015
|Quantized conductive filament formed by limited Cu source in sub-5nm era|
J Park, W Lee, M Choe, S Jung, M Son, S Kim, S Park, J Shin, D Lee, ...
2011 International Electron Devices Meeting, 3.7. 1-3.7. 4, 2011
|Bidirectional threshold switching in engineered multilayer (Cu2O/Ag: Cu2O/Cu2O) stack for cross-point selector application|
J Song, A Prakash, D Lee, J Woo, E Cha, S Lee, H Hwang
Applied Physics Letters 107 (11), 113504, 2015
|Multi-layer tunnel barrier (Ta2O5/TaOx/TiO2) engineering for bipolar RRAM selector applications|
J Woo, W Lee, S Park, S Kim, D Lee, G Choi, E Cha, J hyun Lee, ...
2013 Symposium on VLSI Technology, T168-T169, 2013