| Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors KH Ji, JI Kim, HY Jung, SY Park, R Choi, UK Kim, CS Hwang, D Lee, ... Applied Physics Letters 98 (10), 103509, 2011 | 305 | 2011 |
| RRAM-based synapse for neuromorphic system with pattern recognition function S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ... 2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012 | 217 | 2012 |
| Threshold selector with high selectivity and steep slope for cross-point memory array J Song, J Woo, A Prakash, D Lee, H Hwang IEEE Electron Device Letters 36 (7), 681-683, 2015 | 165 | 2015 |
| High Current Density and Nonlinearity Combination of Selection Device Based on TaO x/TiO2/TaO x Structure for One Selector–One Resistor Arrays W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ... Acs Nano 6 (9), 8166-8172, 2012 | 163 | 2012 |
| Diode-less nano-scale ZrOx/HfOxRRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications J Lee, J Shin, D Lee, W Lee, S Jung, M Jo, J Park, KP Biju, S Kim, S Park, ... 2010 International Electron Devices Meeting, 19.5. 1-19.5. 4, 2010 | 135 | 2010 |
| Ultrathin (<10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ... 2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012 | 122 | 2012 |
| Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application E Cha, J Park, J Woo, D Lee, A Prakash, H Hwang Applied Physics Letters 108 (15), 153502, 2016 | 105 | 2016 |
| Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ... 2012 Symposium on VLSI Technology (VLSIT), 37-38, 2012 | 97 | 2012 |
| Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications X Liu, SM Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang IEEE Electron Device Letters 33 (2), 236-238, 2011 | 92 | 2011 |
| Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ... 2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013 | 89 | 2013 |
| Threshold-switching characteristics of a nanothin-NbO 2-layer-based Pt/NbO 2/Pt stack for use in cross-point-type resistive memories S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ... Microelectronic Engineering 107, 33-36, 2013 | 72 | 2013 |
| Complementary resistive switching in niobium oxide-based resistive memory devices X Liu, SM Sadaf, S Park, S Kim, E Cha, D Lee, GY Jung, H Hwang IEEE electron device letters 34 (2), 235-237, 2013 | 67 | 2013 |
| Self-Selective Characteristics of Nanoscale Devices for High-Density ReRAM Applications M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ... IEEE Electron Device Letters 33 (5), 718-720, 2012 | 66 | 2012 |
| Oxide based nanoscale analog synapse device for neural signal recognition system D Lee, J Park, K Moon, J Jang, S Park, M Chu, J Kim, J Noh, M Jeon, ... 2015 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2015 | 52 | 2015 |
| Noise-Analysis-Based Model of Filamentary Switching ReRAM With Stacks D Lee, J Lee, M Jo, J Park, M Siddik, H Hwang IEEE Electron Device Letters 32 (7), 964-966, 2011 | 49 | 2011 |
| Bidirectional threshold switching in engineered multilayer (Cu2O/Ag: Cu2O/Cu2O) stack for cross-point selector application J Song, A Prakash, D Lee, J Woo, E Cha, S Lee, H Hwang Applied Physics Letters 107 (11), 113504, 2015 | 48 | 2015 |
| Hardware implementation of associative memory characteristics with analogue-type resistive-switching device K Moon, S Park, J Jang, D Lee, J Woo, E Cha, S Lee, J Park, J Song, ... Nanotechnology 25 (49), 495204, 2014 | 46 | 2014 |
| Effects of RESET current overshoot and resistance state on reliability of RRAM J Song, D Lee, J Woo, Y Koo, E Cha, S Lee, J Park, K Moon, SH Misha, ... IEEE Electron Device Letters 35 (6), 636-638, 2014 | 46 | 2014 |
| Structurally Engineered Stackable and Scalable 3D Titanium‐Oxide Switching Devices for High‐Density Nanoscale Memory D Lee, J Park, J Park, J Woo, E Cha, S Lee, K Moon, J Song, Y Koo, ... Advanced Materials 27 (1), 59-64, 2015 | 44 | 2015 |
| Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices S Kim, D Lee, J Park, S Jung, W Lee, J Shin, J Woo, G Choi, H Hwang Nanotechnology 23 (32), 325702, 2012 | 43 | 2012 |
Hyunsang HwangPOSTECH, Koreapostech.ac.kr의 이메일 확인됨
