Manzar Siddik
Manzar Siddik
Verified email at micron.com
Title
Cited by
Cited by
Year
Resistive switching characteristics and mechanism of thermally grown WOx thin films
KP Biju, X Liu, M Siddik, S Kim, J Shin, I Kim, A Ignatiev, H Hwang
Journal of Applied Physics 110 (6), 064505, 2011
612011
Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device
I Kim, M Siddik, J Shin, KP Biju, S Jung, H Hwang
Applied Physics Letters 99 (4), 042101, 2011
502011
Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices
KP Biju, XJ Liu, EM Bourim, I Kim, S Jung, M Siddik, J Lee, H Hwang
Journal of Physics D: Applied Physics 43 (49), 495104, 2010
442010
Noise-Analysis-Based Model of Filamentary Switching ReRAM With Stacks
D Lee, J Lee, M Jo, J Park, M Siddik, H Hwang
IEEE Electron Device Letters 32 (7), 964-966, 2011
422011
Memory cells, methods of fabrication, and semiconductor devices
M Siddik, A Lyle, W Kula
US Patent 9,608,197, 2017
402017
Quantized conductive filament formed by limited Cu source in sub-5nm era
J Park, W Lee, M Choe, S Jung, M Son, S Kim, S Park, J Shin, D Lee, ...
2011 International Electron Devices Meeting, 3.7. 1-3.7. 4, 2011
372011
Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices
SM Sadaf, X Liu, M Son, S Park, SH Choudhury, E Cha, M Siddik, J Shin, ...
physica status solidi (a) 209 (6), 1179-1183, 2012
332012
Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications
S Park, S Jung, M Siddik, M Jo, J Park, S Kim, W Lee, J Shin, D Lee, ...
physica status solidi (RRL)–Rapid Research Letters 6 (11), 454-456, 2012
322012
Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations
S Kim, J Park, S Jung, W Lee, J Woo, C Cho, M Siddik, J Shin, S Park, ...
Applied Physics Letters 99 (19), 192110, 2011
252011
Memory cells, methods of fabrication, and memory devices
M Siddik, W Kula
US Patent 10,454,024, 2019
232019
Understanding cycling endurance in perpendicular spin-transfer torque (p-STT) magnetic memory
R Carboni, S Ambrogio, W Chen, M Siddik, J Harms, A Lyle, W Kula, ...
2016 IEEE International Electron Devices Meeting (IEDM), 21.6. 1-21.6. 4, 2016
222016
Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application
KP Biju, X Liu, J Shin, I Kim, S Jung, M Siddik, J Lee, A Ignatiev, H Hwang
Current Applied Physics 11 (4), S102-S106, 2011
212011
Methods of forming semiconductor devices including tunnel barrier materials
M Siddik, W Kula, S Ramarajan
US Patent 10,439,131, 2019
192019
Thermally-assisted Ti/Pr0.7Ca0.3MnO3ReRAM with excellent switching speed and retention characteristics
S Jung, M Siddik, W Lee, J Park, X Liu, J Woo, G Choi, J Lee, N Lee, ...
2011 International Electron Devices Meeting, 3.6. 1-3.6. 4, 2011
192011
Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications
M Siddik, S Jung, J Park, W Lee, S Kim, J Lee, J Shin, S Park, D Lee, I Kim, ...
Applied Physics Letters 99 (6), 063501, 2011
182011
Improved resistive switching properties in Pt/Pr0. 7Ca0. 3MnO3/Y2O3-stabilized ZrO2/W via-hole structures
X Liu, KP Biju, S Park, I Kim, M Siddik, S Sadaf, H Hwang
Current Applied Physics 11 (2), e58-e61, 2011
182011
Modeling of breakdown-limited endurance in spin-transfer torque magnetic memory under pulsed cycling regime
R Carboni, S Ambrogio, W Chen, M Siddik, J Harms, A Lyle, W Kula, ...
IEEE Transactions on Electron Devices 65 (6), 2470-2478, 2018
172018
Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen‐deficient layer
S Park, S Jung, M Siddik, M Jo, J Lee, J Park, W Lee, S Kim, SM Sadaf, ...
physica status solidi (RRL)–Rapid Research Letters 5 (10‐11), 409-411, 2011
162011
Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices
J Woo, S Jung, M Siddik, E Cha, S Md. Sadaf, H Hwang
Applied Physics Letters 99 (16), 162109, 2011
152011
Operation voltage control in complementary resistive switches using heterodevice
D Lee, J Park, S Jung, G Choi, J Lee, S Kim, J Woo, M Siddik, E Cha, ...
IEEE electron device letters 33 (4), 600-602, 2012
142012
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