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Senthilkumar Rajarathinam
Senthilkumar Rajarathinam
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Li2MnO3 rich-LiMn0. 33Co0. 33Ni0. 33O2 integrated nano-composites as high energy density lithium-ion battery cathode materials
S Rajarathinam, S Mitra, RK Petla
Electrochimica Acta 108, 135-144, 2013
302013
Impact of oxygen partial pressure on resistive switching characteristics of PLD deposited ZnFe2O4 thin films for RRAM devices
S Rajarathinam, U Ganguly, N Venkataramani
Ceramics International 48 (6), 7876-7884, 2022
152022
Bipolar resistive switching with improved memory window in W/ZnFe2O4/Pt devices
S Rajarathinam, N Panwar, P Kumbhare, U Ganguly, N Venkataramani
Materials Science in Semiconductor Processing 142, 106497, 2022
32022
A comprehensive study of effect of composition on resistive switching of HfxAl1-xOy based RRAM devices by combinatorial sputtering
P Kumbhare, P Meihar, S Rajarathinam, S Chouhan, S Pai, N Panwar, ...
MRS Online Proceedings Library (OPL) 1729, 65-70, 2015
32015
Li {sub 2} MnO {sub 3} rich-LiMn {sub 0.33} Co {sub 0.33} Ni {sub 0.33} O {sub 2} integrated nano-composites as high energy density lithium-ion battery cathode materials
S Rajarathinam, S Mitra, RK Petla
Electrochimica Acta 108, 2013
2013
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