| Negative capacitance effect in semiconductor devices M Ershov, HC Liu, L Li, M Buchanan, ZR Wasilewski, AK Jonscher IEEE Transactions on Electron devices 45 (10), 2196-2206, 1998 | 389 | 1998 |
| Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors M Ershov, S Saxena, H Karbasi, S Winters, S Minehane, J Babcock, ... Applied physics letters 83 (8), 1647-1649, 2003 | 221 | 2003 |
| Negative capacitance of GaAs homojunction far-infrared detectors AGU Perera, WZ Shen, M Ershov, HC Liu, M Buchanan, WJ Schaff Applied Physics Letters 74 (21), 3167-3169, 1999 | 124 | 1999 |
| Contact and distributed effects in quantum well infrared photodetectors M Ershov, V Ryzhii, C Hamaguchi Applied physics letters 67 (21), 3147-3149, 1995 | 117 | 1995 |
| Unusual capacitance behavior of quantum well infrared photodetectors M Ershov, HC Liu, L Li, M Buchanan, ZR Wasilewski, V Ryzhii Applied Physics Letters 70 (14), 1828-1830, 1997 | 101 | 1997 |
| Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors M Ershov, HC Liu, M Buchanan, ZR Wasilewski, V Ryzhii Applied physics letters 70 (4), 414-416, 1997 | 81 | 1997 |
| Vehicle detection and counting system for real-time traffic surveillance BA Alpatov, PV Babayan, MD Ershov 2018 7th Mediterranean Conference on Embedded Computing (MECO), 1-4, 2018 | 62 | 2018 |
| Device physics and modeling of multiple quantum well infrared photodetectors M Ershov, C Hamaguchi, VRV Ryzhii Japanese journal of applied physics 35 (2S), 1395, 1996 | 46 | 1996 |
| Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors M Ershov, R Lindley, S Saxena, A Shibkov, S Minehane, J Babcock, ... 2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003 | 43 | 2003 |
| Low-frequency noise gain and photocurrent gain in quantum well infrared photodetectors M Ershov, HC Liu Journal of applied physics 86 (11), 6580-6585, 1999 | 43 | 1999 |
| Temperature dependence of the electron impact ionization coefficient in silicon M Ershov, V Ryzhii Semiconductor science and technology 10 (2), 138, 1995 | 42 | 1995 |
| Electron density modulation effect in a quantum‐well infrared phototransistor V Ryzhii, M Ershov Journal of applied physics 78 (2), 1214-1218, 1995 | 38 | 1995 |
| Monte Carlo study of electron transport in strained silicon‐carbon alloy M Ershov, V Ryzhii Journal of applied physics 76 (3), 1924-1926, 1994 | 36 | 1994 |
| Quantum well infrared photodetector with optical output VR Ershov, MRM Ryzhii, IKI Khmyrova Japanese journal of applied physics 34 (1A), L38, 1995 | 35 | 1995 |
| A novel capacitor-less DRAM cell using thin capacitively-coupled thyristor (TCCT) HJ Cho, F Nemati, R Roy, R Gupta, K Yang, M Ershov, S Banna, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 30 | 2005 |
| Transient photoconductivity in quantum well infrared photodetectors M Ershov Applied physics letters 69 (23), 3480-3482, 1996 | 29 | 1996 |
| High-field electron transport in SiGe alloy MEM Ershov, VRV Ryzhii Japanese journal of applied physics 33 (3R), 1365, 1994 | 29 | 1994 |
| Degradation dynamics, recovery, and characterization of negative bias temperature instability M Ershov, S Saxena, S Minehane, P Clifton, M Redford, R Lindley, ... Microelectronics Reliability 45 (1), 99-105, 2005 | 27 | 2005 |
| Analytical model of transient photoresponse of quantum well infrared photodetectors M Ershov, S Satou, Y Ikebe Journal of applied physics 86 (11), 6442-6450, 1999 | 26 | 1999 |
| Comparison studies of infrared phototransistors with a quantum-well and a quantum-wire base V Ryzhii, I Khmyrova, M Ryzhii, M Ershov Le Journal de Physique IV 6 (C3), C3-157-C3-161, 1996 | 25 | 1996 |
