Ashkar Ali
Ashkar Ali
Intel Corporation
Verified email at psu.edu
TitleCited byYear
Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and…
S Mookerjea, D Mohata, R Krishnan, J Singh, A Vallett, A Ali, T Mayer, ...
2009 IEEE international electron devices meeting (IEDM), 1-3, 2009
1682009
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of AlO
A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ...
Applied Physics Letters 97, 143502, 2010
1262010
A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate…
C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017
1202017
Small-Signal Response of Inversion Layers in High-Mobility $ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $ MOSFETs Made With Thin High-$ kappa $ Dielectrics
A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ...
Electron Devices, IEEE Transactions on 57 (4), 742-748, 2010
912010
Study of texture evolution in metastable β-Ti alloy as a function of strain path and its effect on α transformation texture
NP Gurao, S Suwas
Materials Science and Engineering: A 504 (1-2), 24-35, 2009
452009
Insight into the output characteristics of III-V tunneling field effect transistors
B Rajamohanan, D Mohata, A Ali, S Datta
Applied Physics Letters 102 (9), 092105, 2013
402013
Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs
WC Kao, A Ali, E Hwang, S Mookerjea, S Datta
Solid-State Electronics 54 (12), 1665-1668, 2010
342010
Band offsets determination and interfacial chemical properties of the system
I Geppert, M Eizenberg, A Ali, S Datta
Applied Physics Letters 97 (16), 162109, 2010
332010
Experimental determination of quantum and centroid capacitance in arsenide–antimonide quantum-well MOSFETs incorporating nonparabolicity effect
A Ali, H Madan, R Misra, A Agrawal, P Schiffer, JB Boos, BR Bennett, ...
IEEE Transactions on Electron Devices 58 (5), 1397-1403, 2011
282011
Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance
A Ali, H Madan, A Agrawal, I Ramirez, R Misra, JB Boos, BR Bennett, ...
Electron Device Letters, IEEE 32 (12), 1689-1691, 2011
232011
Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors
A Ali, H Madan, R Misra, E Hwang, A Agrawal, I Ramirez, P Schiffer, ...
Electron Devices Meeting (IEDM), 2010 IEEE International, 6.3. 1-6.3. 4, 2010
22*2010
Genetic mapping reveals a candidate gene (ClFS1) for fruit shape in watermelon (Citrullus lanatus L.)
J Dou, S Zhao, X Lu, N He, L Zhang, A Ali, H Kuang, W Liu
Theoretical and applied genetics 131 (4), 947-958, 2018
192018
Effect of interface states on the performance of antimonide nMOSFETs
A Ali, H Madan, MJ Barth, JB Boos, BR Bennett, S Datta
IEEE Electron Device Letters 34 (3), 360-362, 2013
152013
Studies on the bioactivity and physiological reactions of the extracts from Myoporum bontiodes against Pieris rapae
MY Hu, AB Ali, GH Zhong, SF Zhao
Acta Phytophylacica Sinica 26 (3), 265-270, 1999
71999
Processing and characterization of GaSb/high-k dielectric interfaces
E Hwang, C Eaton, S Mujumdar, H Madan, A Ali, D Bhatia, S Datta, ...
ECS Transactions 41 (5), 157-162, 2011
62011
Genetic mapping reveals a marker for yellow skin in watermelon (Citrullus lanatus L.)
J Dou, X Lu, A Ali, S Zhao, L Zhang, N He, W Liu
PloS one 13 (9), e0200617, 2018
52018
Genome-wide in silico analysis of dehydrins in Sorghum bicolor, Setaria italica and Zea mays and quantitative analysis of dehydrin gene expressions under abiotic stresses in…
M Nagaraju, PS Reddy, SA Kumar, A Kumar, P Suravajhala, A Ali, ...
Plant gene 13, 64-75, 2018
42018
Compressively Strained InSb MOSFETs with High Hole Mobility for P-Channel Application
M Barth, A Agrawal, A Ali, J Fastenau, WK Liu, S Datta
Device Research Conference (DRC), 2013
42013
Antimonide NMOSFET with source side injection velocity of 2.7107cm/s for low power high performance logic applications
A Ali, H Madan, MJ Barth, MJ Hollander, JB Boos, BR Bennett, S Datta
2012 Symposium on VLSI Technology (VLSIT), 181-182, 2012
42012
High-performance, flexible graphene/ultra-thin silicon ultra-violet image sensor
A Ali, K Shehzad, H Guo, Z Wang, P Wang, A Qadir, W Hu, T Ren, B Yu, ...
2017 IEEE International Electron Devices Meeting (IEDM), 8.6. 1-8.6. 4, 2017
32017
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