Ashkar Ali
Ashkar Ali
Intel Corporation
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Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and …
S Mookerjea, D Mohata, R Krishnan, J Singh, A Vallett, A Ali, T Mayer, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-3, 2009
A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate …
C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of AlO
A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ...
Applied Physics Letters 97, 143502, 2010
Small-Signal Response of Inversion Layers in High-Mobility $ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $ MOSFETs Made With Thin High-$ kappa $ Dielectrics
A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ...
Electron Devices, IEEE Transactions on 57 (4), 742-748, 2010
Identification and molecular characterization of viruses infecting cucurbits in Pakistan
A Ali, T Natsuaki, S Okuda
Journal of Phytopathology 152 (11‐12), 677-682, 2004
Study of texture evolution in metastable β-Ti alloy as a function of strain path and its effect on α transformation texture
NP Gurao, S Suwas
Materials Science and Engineering: A 504 (1-2), 24-35, 2009
Insight into the output characteristics of III-V tunneling field effect transistors
B Rajamohanan, D Mohata, A Ali, S Datta
Applied Physics Letters 102 (9), 092105, 2013
Band offsets determination and interfacial chemical properties of the system
I Geppert, M Eizenberg, A Ali, S Datta
Applied Physics Letters 97 (16), 162109, 2010
Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs
WC Kao, A Ali, E Hwang, S Mookerjea, S Datta
Solid-state electronics 54 (12), 1665-1668, 2010
Experimental determination of quantum and centroid capacitance in arsenide–antimonide quantum-well MOSFETs incorporating nonparabolicity effect
A Ali, H Madan, R Misra, A Agrawal, P Schiffer, JB Boos, BR Bennett, ...
IEEE transactions on electron devices 58 (5), 1397-1403, 2011
Genetic mapping reveals a candidate gene (ClFS1) for fruit shape in watermelon (Citrullus lanatus L.)
J Dou, S Zhao, X Lu, N He, L Zhang, A Ali, H Kuang, W Liu
Theoretical and applied genetics 131 (4), 947-958, 2018
Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance
A Ali, H Madan, A Agrawal, I Ramirez, R Misra, JB Boos, BR Bennett, ...
Electron Device Letters, IEEE 32 (12), 1689-1691, 2011
Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors
A Ali, H Madan, R Misra, E Hwang, A Agrawal, I Ramirez, P Schiffer, ...
Electron Devices Meeting (IEDM), 2010 IEEE International, 6.3. 1-6.3. 4, 2010
A novel transdermal drug delivery system
VS Kumar, SK Niranjan, R Irchhaiya, K Neeraj, A Ali
Int Res J Pharm 3 (8), 39-44, 2012
Opting for a cesarean: what determines the decision?
KM Kassak, AM Ali, AM Abdallah
Public Administration and Management 14 (1), 100, 2009
Effect of interface states on the performance of Antimonide nMOSFETs
A Ali, H Madan, MJ Barth, JB Boos, BR Bennett, S Datta
IEEE electron device letters 34 (3), 360-362, 2013
Flavans from Crinum americanum
AA Ali, HM Sayed, OM Abdalla, W Steglich
Pharmazie 43 (4), 295-296, 1988
Genetic mapping reveals a marker for yellow skin in watermelon (Citrullus lanatus L.)
J Dou, X Lu, A Ali, S Zhao, L Zhang, N He, W Liu
PloS one 13 (9), 2018
Antioxidant activity, acetylcholinesterase inhibitory potential and phytochemical analysis of Sarcocephalus latifolius Sm. bark used in traditional medicine in Sudan
A Osama, S Awadelkarim, A Ali
BMC complementary and alternative medicine 17 (1), 270, 2017
An efficient scheduling scheme for OFDMA resource blocks with joint user scheduling based on earliest deadline first with carrier aggregation (CA) in LTE-A system
AA Ali, R Nordin, M Ismail, H Abdullah
Wireless Personal Communications 88 (2), 173-183, 2016
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