A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate … C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017 | 414 | 2017 |
Experimental demonstration of 100nm channel length In0.53Ga0.47As-based vertical inter-band tunnel field effect transistors (TFETs) for ultra low-power logic and … S Mookerjea, D Mohata, R Krishnan, J Singh, A Vallett, A Ali, T Mayer, ... 2009 IEEE international electron devices meeting (IEDM), 1-3, 2009 | 200 | 2009 |
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of AlO A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ... Applied Physics Letters 97, 143502, 2010 | 166* | 2010 |
Small-Signal Response of Inversion Layers in High-Mobility $ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $ MOSFETs Made With Thin High-$ kappa $ Dielectrics A Ali, H Madan, S Koveshnikov, S Oktyabrsky, R Kambhampati, T Heeg, ... Electron Devices, IEEE Transactions on 57 (4), 742-748, 2010 | 94 | 2010 |
Insight into the output characteristics of III-V tunneling field effect transistors B Rajamohanan, D Mohata, A Ali, S Datta Applied Physics Letters 102 (9), 2013 | 58 | 2013 |
Band offsets determination and interfacial chemical properties of the Al2O3/GaSb system I Geppert, M Eizenberg, A Ali, S Datta Applied Physics Letters 97 (16), 2010 | 39 | 2010 |
Effect of interface states on sub-threshold response of III–V MOSFETs, MOS HEMTs and tunnel FETs WC Kao, A Ali, E Hwang, S Mookerjea, S Datta Solid-state electronics 54 (12), 1665-1668, 2010 | 38 | 2010 |
Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors A Ali, H Madan, R Misra, E Hwang, A Agrawal, I Ramirez, P Schiffer, ... Electron Devices Meeting (IEDM), 2010 IEEE International, 6.3. 1-6.3. 4, 2010 | 29 | 2010 |
Experimental determination of quantum and centroid capacitance in arsenide–antimonide quantum-well MOSFETs incorporating nonparabolicity effect A Ali, H Madan, R Misra, A Agrawal, P Schiffer, JB Boos, BR Bennett, ... IEEE transactions on electron devices 58 (5), 1397-1403, 2011 | 27 | 2011 |
Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance A Ali, H Madan, A Agrawal, I Ramirez, R Misra, JB Boos, BR Bennett, ... Electron Device Letters, IEEE 32 (12), 1689-1691, 2011 | 25 | 2011 |
Effect of interface states on the performance of antimonide nMOSFETs A Ali, H Madan, MJ Barth, JB Boos, BR Bennett, S Datta IEEE electron device letters 34 (3), 360-362, 2013 | 15 | 2013 |
Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET S Mookerjea, D Mohata, R Krishnan, J Singh, A Vallett, A Ali, T Mayer, ... International Electron Devices Meeting, 949, 2009 | 14 | 2009 |
A New Design of Grid Tie Inverter for a Grid Interactive Solar Photovoltaic Power Generation–An Innovative Option for Energy Conservation & Security M Gohul, T Jayachandran, AMS Ali, TG Raju, NS Kumar, MR Saravanan Power 7109, 161-166, 2011 | 12 | 2011 |
FABRICATION OF A DIFFUSION CELL FOR THE DETERMINATION OF DRUG RELEASE FROMTOPICAL AEROSOL FORMULATIONS A Ali, S Radha, SP Agarwal Indian drugs 34 (12), 715-717, 1997 | 11 | 1997 |
Processing and characterization of GaSb/high-k dielectric interfaces E Hwang, C Eaton, S Mujumdar, H Madan, A Ali, D Bhatia, S Datta, ... ECS Transactions 41 (5), 157, 2011 | 8 | 2011 |
IEDM Tech. Dig. S Mookerjea, D Mohata, R Krishnan, J Sing, A Vallett, A Ali, T Mayer, ... Tech. Dig, 949, 2009 | 8 | 2009 |
OC-143 Artificial neural network for the risk stratification of acute upper gastrointestinal bleeding: multicentre comparative analysis vs the Glasgow Blatchford and rockall scores A Ali, J Swingland, CH Choi, J Chan, S Khan, S Bose, L Ayaru Gut 61 (Suppl 2), A62-A62, 2012 | 7 | 2012 |
Antimonide NMOSFET with source side injection velocity of 2.7×107cm/s for low power high performance logic applications A Ali, H Madan, MJ Barth, MJ Hollander, JB Boos, BR Bennett, S Datta 2012 Symposium on VLSI Technology (VLSIT), 181-182, 2012 | 6 | 2012 |
Compressively Strained InSb MOSFETs with High Hole Mobility for P-Channel Application M Barth, A Agrawal, A Ali, J Fastenau, WK Liu, S Datta Device Research Conference (DRC), 2013 | 5 | 2013 |
Implementation of cogeneration technique in textile industry for energy conservation M Gohul, AMS Ali, TG Raju, MR Saravanan, A Pasupathy International Journal of Engineering Research and Applications 2 (5), 1421-1427, 2012 | 3 | 2012 |