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Su Min Hwang
Su Min Hwang
Verified email at utdallas.edu
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Year
A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films
SJ Kim, J Mohan, HS Kim, SM Hwang, N Kim, YC Jung, A Sahota, K Kim, ...
Materials 13 (13), 2968, 2020
382020
Investigation of the physical properties of plasma enhanced atomic layer deposited silicon nitride as etch stopper
HS Kim, X Meng, SJ Kim, AT Lucero, L Cheng, YC Byun, JS Lee, ...
ACS applied materials & interfaces 10 (51), 44825-44833, 2018
312018
Hollow cathode plasma-enhanced atomic layer deposition of silicon nitride using pentachlorodisilane
X Meng, HS Kim, AT Lucero, SM Hwang, JS Lee, YC Byun, J Kim, ...
ACS applied materials & interfaces 10 (16), 14116-14123, 2018
312018
Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors
SJ Kim, J Mohan, HS Kim, J Lee, SM Hwang, D Narayan, JG Lee, ...
Applied Physics Letters 115 (18), 2019
302019
Low-thermal-budget (300° C) ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors realized using high-pressure annealing
SJ Kim, YC Jung, J Mohan, HJ Kim, SM Rho, MS Kim, JG Yoo, HR Park, ...
Applied Physics Letters 119 (24), 2021
202021
Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitrogen source
YC Jung, SM Hwang, DN Le, ALN Kondusamy, J Mohan, SW Kim, JH Kim, ...
Materials 13 (15), 3387, 2020
182020
Inductively coupled plasma reactive ion etching of magnetic tunnel junction stacks in a CH3COOH/Ar gas
AA Garay, JH Choi, SM Hwang, CW Chung
ECS Solid State Letters 4 (10), P77, 2015
182015
Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture
AA Garay, SM Hwang, JH Choi, BC Min, CW Chung
Vacuum 119, 151-158, 2015
122015
Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings
SM Hwang, HS Kim, DN Le, AV Ravichandran, A Sahota, J Lee, YC Jung, ...
ACS Applied Nano Materials 4 (3), 2558-2564, 2021
112021
High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture
SM Hwang, AA Garay, WI Lee, CW Chung
Thin Solid Films 587, 28-33, 2015
112015
Dry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma
AA Garay, SM Hwang, CW Chung
Vacuum 111, 19-24, 2015
112015
High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor
HS Kim, SM Hwang, X Meng, YC Byun, YC Jung, AV Ravichandran, ...
Journal of Materials Chemistry C 8 (37), 13033-13039, 2020
102020
Inductive couple plasma reactive ion etching characteristics of TiO2 thin films
AA Garay, SM Hwang, CW Chung
Thin Solid Films 587, 20-27, 2015
102015
Etch characteristics of CoFeB thin films and magnetic tunnel junction stacks in a H2O/CH3OH plasma
SM Hwang, A Garay, IH Lee, CW Chung
Korean Journal of Chemical Engineering 31, 2274-2279, 2014
102014
Etch characteristics of MgO thin films in Cl2/Ar, CH3OH/Ar and CH4/Ar plasmas
IH Lee, TY Lee, SM Hwang, CW Chung
Vacuum 101, 394-398, 2014
92014
Hollow Cathode Plasma (HCP) Enhanced Atomic Layer Deposition of Silicon Nitride (SiNx) Thin Films Using Pentachlorodisilane (PCDS)
SM Hwang, ALN Kondusamy, Z Qin, HS Kim, X Meng, J Kim, BK Hwang, ...
ECS Transactions 89 (3), 63, 2019
72019
Ozone based high-temperature atomic layer deposition of SiO2 thin films
SM Hwang, Z Qin, HS Kim, A Ravichandran, YC Jung, SJ Kim, J Ahn, ...
Japanese Journal of Applied Physics 59 (SI), SIIG05, 2020
62020
Highly anisotropic etching of Ta thin films using high density plasmas of halogen based gases
JH Choi, SM Hwang, JY Lee, AA Garay, CW Chung
Vacuum 133, 18-24, 2016
62016
Robust low-temperature (350° C) ferroelectric Hf0. 5Zr0. 5O2 fabricated using anhydrous H2O2 as the ALD oxidant
YC Jung, JH Kim, H Hernandez-Arriaga, J Mohan, SM Hwang, DN Le, ...
Applied Physics Letters 121 (22), 2022
52022
Vapor-phase Surface Cleaning of Electroplated Cu Films Using Anhydrous N2H4
SM Hwang, LF Peņa, K Tan, HS Kim, ALN Kondusamy, Z Qin, YC Jung, ...
ECS Transactions 92 (2), 265, 2019
52019
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