|Flexible organic solar cells composed of P3HT: PCBM using chemically doped graphene electrodes|
S Lee, JS Yeo, Y Ji, C Cho, DY Kim, SI Na, BH Lee, T Lee
Nanotechnology 23 (34), 344013, 2012
|Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure|
J Jang, M Son, S Chung, K Kim, C Cho, BH Lee, MH Ham
Scientific reports 5 (1), 1-7, 2015
|Effects of multi-layer graphene capping on Cu interconnects|
CG Kang, SK Lim, S Lee, SK Lee, C Cho, YG Lee, HJ Hwang, Y Kim, ...
Nanotechnology 24 (11), 115707, 2013
|Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories|
S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ...
Microelectronic Engineering 107, 33-36, 2013
|Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I–V method|
YG Lee, CG Kang, C Cho, Y Kim, HJ Hwang, BH Lee
Carbon 60, 453-460, 2013
|Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors|
CG Kang, YG Lee, SK Lee, E Park, C Cho, SK Lim, HJ Hwang, BH Lee
Carbon 53, 182-187, 2013
|Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack|
W Park, JH Yang, CG Kang, YG Lee, HJ Hwang, C Cho, SK Lim, SC Kang, ...
Nanotechnology 24 (47), 475501, 2013
|Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask|
CG Kang, JW Kang, SK Lee, SY Lee, CH Cho, HJ Hwang, YG Lee, J Heo, ...
Nanotechnology 22 (29), 295201, 2011
|A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks|
YH Kahng, S Lee, M Choe, G Jo, W Park, J Yoon, WK Hong, CH Cho, ...
Nanotechnology 22 (4), 045706, 2010
|Graphene transfer in vacuum yielding a high quality graphene|
S Lee, SK Lee, CG Kang, C Cho, YG Lee, U Jung, BH Lee
Carbon 93, 286-294, 2015
|Ferroelectric polymer-gated graphene memory with high speed conductivity modulation|
HJ Hwang, JH Yang, YG Lee, C Cho, CG Kang, SC Kang, W Park, ...
Nanotechnology 24 (17), 175202, 2013
|Demonstration of complementary ternary graphene field-effect transistors|
YJ Kim, SY Kim, J Noh, CH Shim, U Jung, SK Lee, KE Chang, C Cho, ...
Scientific reports 6 (1), 1-7, 2016
|Enhanced current drivability of CVD graphene interconnect in oxygen-deficient environment|
CG Kang, SK Lee, YG Lee, HJ Hwang, C Cho, SK Lim, J Heo, HJ Chung, ...
IEEE electron device letters 32 (11), 1591-1593, 2011
|Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations|
S Kim, J Park, S Jung, W Lee, J Woo, C Cho, M Siddik, J Shin, S Park, ...
Applied Physics Letters 99 (19), 192110, 2011
|Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications|
J Yoon, J Lee, H Choi, JB Park, D Seong, W Lee, C Cho, S Kim, H Hwang
Microelectronic Engineering 86 (7-9), 1929-1932, 2009
|Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors|
Y Gon Lee, Y Ji Kim, C Goo Kang, C Cho, S Lee, H Jun Hwang, U Jung, ...
Applied Physics Letters 102 (9), 093121, 2013
|Complementary Unipolar WS2 Field‐Effect Transistors Using Fermi‐Level Depinning Layers|
W Park, Y Kim, U Jung, JH Yang, C Cho, YJ Kim, SMN Hasan, HG Kim, ...
Advanced Electronic Materials 2 (2), 1500278, 2016
|Contact resistance reduction using Fermi level de-pinning layer for MoS2FETs|
W Park, Y Kim, SK Lee, U Jung, JH Yang, C Cho, YJ Kim, SK Lim, ...
2014 IEEE International Electron Devices Meeting, 5.1. 1-5.1. 4, 2014
|A graphene barristor using nitrogen profile controlled ZnO Schottky contacts|
HJ Hwang, KE Chang, WB Yoo, CH Shim, SK Lee, JH Yang, SY Kim, ...
Nanoscale 9 (7), 2442-2448, 2017
|Correlation between the hysteresis and the initial defect density of graphene|
C Cho, Y Gon Lee, U Jung, C Goo Kang, S Lim, H Jun Hwang, H Choi, ...
Applied Physics Letters 103 (8), 083110, 2013