Johannes Jobst
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
KV Emtsev, A Bostwick, K Horn, J Jobst, GL Kellogg, L Ley, ...
Nature materials 8 (3), 203-207, 2009
The quasi-free-standing nature of graphene on H-saturated SiC (0001)
F Speck, J Jobst, F Fromm, M Ostler, D Waldmann, M Hundhausen, ...
Applied Physics Letters 99 (12), 122106, 2011
Quantum oscillations and quantum Hall effect in epitaxial graphene
J Jobst, D Waldmann, F Speck, R Hirner, DK Maude, T Seyller, HB Weber
Physical Review B 81 (19), 195434, 2010
Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
S Hertel, D Waldmann, J Jobst, A Albert, M Albrecht, S Reshanov, ...
Nature communications 3 (1), 1-6, 2012
Bottom-gated epitaxial graphene
D Waldmann, J Jobst, F Speck, T Seyller, M Krieger, HB Weber
Nature Materials 10 (5), 357-360, 2011
Electron-electron interaction in the magnetoresistance of graphene
J Jobst, D Waldmann, IV Gornyi, AD Mirlin, HB Weber
Physical Review Letters 108 (10), 106601, 2012
Quasi-freestanding graphene on SiC (0001)
F Speck, M Ostler, J Röhrl, J Jobst, D Waldmann, M Hundhausen, L Ley, ...
Materials Science Forum 645, 629-632, 2010
Nanoscale measurements of unoccupied band dispersion in few-layer graphene
J Jobst, J Kautz, D Geelen, RM Tromp, SJ Van Der Molen
Nature Communications 6 (1), 1-6, 2015
Current annealing and electrical breakdown of epitaxial graphene
S Hertel, F Kisslinger, J Jobst, D Waldmann, M Krieger, HB Weber
Applied Physics Letters 98 (21), 212109, 2011
Observation of flat bands in twisted bilayer graphene
S Lisi, X Lu, T Benschop, TA de Jong, P Stepanov, JR Duran, F Margot, ...
Nature Physics 17 (2), 189-193, 2021
Transport properties of high-quality epitaxial graphene on 6H-SiC (0001)
J Jobst, D Waldmann, F Speck, R Hirner, DK Maude, T Seyller, HB Weber
Solid state communications 151 (16), 1061-1064, 2011
Quantifying electronic band interactions in van der Waals materials using angle-resolved reflected-electron spectroscopy
J Jobst, AJH Van der Torren, EE Krasovskii, J Balgley, CR Dean, ...
Nature communications 7 (1), 1-6, 2016
Origin of logarithmic resistance correction in graphene
J Jobst, HB Weber
Nature Physics 8 (5), 352-352, 2012
Intrinsic stacking domains in graphene on silicon carbide: A pathway for intercalation
TA De Jong, EE Krasovskii, C Ott, RM Tromp, SJ Van Der Molen, J Jobst
Physical Review Materials 2 (10), 104005, 2018
Robust graphene membranes in a silicon carbide frame
D Waldmann, B Butz, S Bauer, JM Englert, J Jobst, K Ullmann, F Fromm, ...
ACS nano 7 (5), 4441-4448, 2013
Nonuniversal transverse electron mean free path through few-layer graphene
D Geelen, J Jobst, EE Krasovskii, SJ Van Der Molen, RM Tromp
Physical review letters 123 (8), 086802, 2019
Detection of the Kondo effect in the resistivity of graphene: Artifacts and strategies
J Jobst, F Kisslinger, HB Weber
Physical Review B 88 (15), 155412, 2013
Key role of very low energy electrons in tin-based molecular resists for extreme ultraviolet nanolithography
I Bespalov, Y Zhang, J Haitjema, RM Tromp, SJ van der Molen, ...
ACS applied materials & interfaces 12 (8), 9881-9889, 2020
Low-energy electron potentiometry: contactless imaging of charge transport on the nanoscale
J Kautz, J Jobst, C Sorger, RM Tromp, HB Weber, SJ Van Der Molen
Scientific reports 5 (1), 1-7, 2015
A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel
F Krach, S Hertel, D Waldmann, J Jobst, M Krieger, S Reshanov, ...
Applied Physics Letters 100 (12), 122102, 2012
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