| Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material R Dahal, J Li, S Majety, BN Pantha, XK Cao, JY Lin, HX Jiang Applied physics letters 98 (21), 2011 | 222 | 2011 |
| Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers J Li, S Majety, R Dahal, WP Zhao, JY Lin, HX Jiang Applied physics letters 101 (17), 2012 | 163 | 2012 |
| Hexagonal boron nitride epitaxial layers as neutron detector materials J Li, R Dahal, S Majety, JY Lin, HX Jiang Nuclear instruments and methods in physics research section a: accelerators …, 2011 | 147 | 2011 |
| Epitaxial growth and demonstration of hexagonal BN/AlGaN pn junctions for deep ultraviolet photonics S Majety, J Li, XK Cao, R Dahal, BN Pantha, JY Lin, HX Jiang Applied Physics Letters 100 (6), 2012 | 128 | 2012 |
| Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers TC Doan, S Majety, S Grenadier, J Li, JY Lin, HX Jiang Nuclear instruments and methods in physics research section a: accelerators …, 2014 | 74 | 2014 |
| Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products TC Doan, S Majety, S Grenadier, J Li, JY Lin, HX Jiang Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2015 | 64 | 2015 |
| Band-edge transitions in hexagonal boron nitride epilayers S Majety, XK Cao, J Li, R Dahal, JY Lin, HX Jiang Applied physics letters 101 (5), 2012 | 62 | 2012 |
| Electrical transport properties of Si-doped hexagonal boron nitride epilayers S Majety, TC Doan, J Li, JY Lin, HX Jiang AIP Advances 3 (12), 2013 | 55 | 2013 |
| Layer-structured hexagonal (BN) C semiconductor alloys with tunable optical and electrical properties MR Uddin, S Majety, J Li, JY Lin, HX Jiang Journal of Applied Physics 115 (9), 2014 | 50 | 2014 |
| Hexagonal boron nitride and 6H-SiC heterostructures S Majety, J Li, WP Zhao, B Huang, SH Wei, JY Lin, HX Jiang Applied Physics Letters 102 (21), 2013 | 50 | 2013 |
| Semiconducting hexagonal boron nitride for deep ultraviolet photonics S Majety, XK Cao, R Dahal, BN Pantha, J Li, JY Lin, HX Jiang Quantum Sensing and Nanophotonic Devices IX 8268, 607-614, 2012 | 28 | 2012 |
| Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures H Jiang, S Majety, R Dahal, J Li, J Lin US Patent 9,093,581, 2015 | 19 | 2015 |
| Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures H Jiang, S Majety, R Dahal, J Li, J Lin US Patent App. 13/464,977, 2013 | 19 | 2013 |
| Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers S Majety, J Li, XK Cao, R Dahal, JY Lin, HX Jiang Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV 8507, 91-99, 2012 | 11 | 2012 |
| Optoelectronic properties of hexagonal boron nitride epilayers XK Cao, S Majety, J Li, JY Lin, HX Jiang Quantum Sensing and Nanophotonic Devices X 8631, 441-449, 2013 | 3 | 2013 |
| Charge Carrier Transport Properties in Layered Structure of Hexagonal Boron Nitride (-BN) and Thermal Neutron Detection Based on -BN T Doan, S Grenadier, S Majety, J Li, J Lin, H Jiang Bulletin of the American Physical Society 60, 2015 | | 2015 |
| Epitaxial growth and characterization of hexagonal boron nitride for deep UV applications S Majety | | 2014 |
| MOCVD grown hexagonal BN epilayers for DUV photonics S Majety, J Li, J Lin, H Jiang APS March Meeting Abstracts 2013, Z21. 014, 2013 | | 2013 |
| Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material HX Jiang, JY Lin, BN Pantha, XK Cao, S Majety, J Li, R Dahal American Institute of Physics, 2011 | | 2011 |
| Structural and Optical properties of Si-doped AlN S Majety, B Pantha, A Sedhain, J Li, H Jiang, J Lin APS March Meeting Abstracts 2011, A12. 007, 2011 | | 2011 |
