| A simple edge termination design for vertical GaN PN diodes P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ... IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022 | 17 | 2022 |
| Hybrid edge termination in vertical GaN: approximating beveled edge termination via Discrete Implantations T Nelson, P Pandey, DG Georgiev, MR Hontz, AD Koehler, KD Hobart, ... IEEE Transactions on Electron Devices 69 (12), 6940-6947, 2022 | 7 | 2022 |
| Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance P Pandey, TM Nelson, MR Hontz, DG Georgiev, R Khanna, AG Jacobs, ... IEEE Transactions on Electron Devices, 2024 | 1 | 2024 |
| Scaled Projections of Empirically Verified Hybrid Edge Terminated Vertical GaN Diodes to 20 kV T Nelson, P Pandey, DG Georgiev, R Khanna, MR Hontz, AG Jacobs, ... 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2023 | 1 | 2023 |
| Characterization and modeling of a 1.3 kV vertical GaN diode P Pandey, W Collings, S Mahmud, T Nelson, MR Hontz, DG Georgiev, ... 2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 928-935, 2022 | 1 | 2022 |
| Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices AG Jacobs, BN Feigelson, JK Hite, JA Spencer, P Pandey, DG Georgiev, ... | 1 | |
| Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN pin Diodes with Avalanche Capability JS Lundh, AG Jacobs, P Pandey, T Nelson, DG Georgiev, AD Koehler, ... IEEE Electron Device Letters, 2024 | | 2024 |
| Design, Packaging, and Empirical Characterization of 1 kV Vertical GaN PN Diode S Mahmud, P Pandey, SK Atwimah, T Nelson, DG Georgiev, AD Koehler, ... 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2496-2502, 2023 | | 2023 |
| Multi-Layer Hybrid Edge Termination for III-N Power Devices TJ Anderson, MA Ebrish, AD Koehler, AG Jacobs, MA Porter, KD Hobart, ... US Patent App. 17/876,163, 2023 | | 2023 |
| Impact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design M Ebrish, AG Jacobs, P Pandey, T Nelson, A Koehler, J Gallagher, ... Electrochemical Society Meeting Abstracts 241, 1312-1312, 2022 | | 2022 |
