Fan Ren
Fan Ren
University of Florida, Bell Lab, AT&T
Verified email at - Homepage
Cited by
Cited by
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 2018
GaN: Processing, defects, and devices
SJ Pearton, JC Zolper, RJ Shul, F Ren
Journal of applied physics 86 (1), 1-78, 1999
Wide band gap ferromagnetic semiconductors and oxides
SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
Hydrogen-selective sensing at room temperature with ZnO nanorods
HT Wang, BS Kang, F Ren, LC Tien, PW Sadik, DP Norton, SJ Pearton, ...
Applied Physics Letters 86 (24), 2005
Fabrication and performance of GaN electronic devices
SJ Pearton, F Ren, AP Zhang, KP Lee
Materials Science and Engineering: R: Reports 30 (3-6), 55-212, 2000
ZnO nanowire growth and devices
YW Heo, DP Norton, LC Tien, Y Kwon, BS Kang, F Ren, SJ Pearton, ...
Materials Science and Engineering: R: Reports 47 (1-2), 1-47, 2004
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 2018
Site-specific growth of ZnO nanorods using catalysis-driven molecular-beam epitaxy
YW Heo, V Varadarajan, M Kaufman, K Kim, DP Norton, F Ren, ...
Applied physics letters 81 (16), 3046-3048, 2002
Perspective—opportunities and future directions for Ga2O3
MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356, 2017
Magnetic properties of n-GaMnN thin films
GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
SJ Pearton, BS Kang, S Kim, F Ren, BP Gila, CR Abernathy, J Lin, ...
Journal of Physics: Condensed Matter 16 (29), R961, 2004
Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods
LC Tien, PW Sadik, DP Norton, LF Voss, SJ Pearton, HT Wang, BS Kang, ...
Applied Physics Letters 87 (22), 2005
Ionizing radiation damage effects on GaN devices
SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
Depletion-mode ZnO nanowire field-effect transistor
YW Heo, LC Tien, Y Kwon, DP Norton, SJ Pearton, BS Kang, F Ren
Applied Physics Letters 85 (12), 2274-2276, 2004
A survey of ohmic contacts to III-V compound semiconductors
AG Baca, F Ren, JC Zolper, RD Briggs, SJ Pearton
Thin solid films 308, 599-606, 1997
Recent advances in wide bandgap semiconductor biological and gas sensors
SJ Pearton, F Ren, YL Wang, BH Chu, KH Chen, CY Chang, W Lim, J Lin, ...
Progress in Materials Science 55 (1), 1-59, 2010
GaN electronics
SJ Pearton, F Ren
Advanced Materials 12 (21), 1571-1580, 2000
Effect of temperature on metal–oxide–semiconductor field-effect transistors
F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
CR Abernathy, SJ Pearton, R Caruso, F Ren, J Kovalchik
Applied Physics Letters 55 (17), 1750-1752, 1989
Electrical effects of plasma damage in
XA Cao, SJ Pearton, AP Zhang, GT Dang, F Ren, RJ Shul, L Zhang, ...
Applied physics letters 75 (17), 2569-2571, 1999
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