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Bong Gyu, Shin
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Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
JS Lee, SH Choi, SJ Yun, YI Kim, S Boandoh, JH Park, BG Shin, H Ko, ...
Science 362 (6416), 817-821, 2018
4012018
Seamless stitching of graphene domains on polished copper (111) foil
VL Nguyen, BG Shin, DL Duong, ST Kim, D Perello, YJ Lim, QH Yuan, ...
Advanced Materials 27 (8), 1376-1382, 2015
3532015
Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain.
BG Shin, GH Han, SJ Yun, HM Oh, JJ Bae, YJ Song, CY Park, YH Lee
Advanced Materials (Deerfield Beach, Fla.) 28 (42), 9378-9384, 2016
1582016
Telluriding monolayer MoS2 and WS2 via alkali metal scooter
SJ Yun, GH Han, H Kim, DL Duong, BG Shin, J Zhao, QA Vu, J Lee, ...
Nature communications 8 (1), 2163, 2017
952017
Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene.
VL Nguyen, DJ Perello, S Lee, CT Nai, BG Shin, JG Kim, HY Park, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (37), 8177-8183, 2016
952016
Epitaxial single‐crystal growth of transition metal dichalcogenide monolayers via the atomic sawtooth Au surface
SH Choi, HJ Kim, B Song, YI Kim, G Han, HTT Nguyen, H Ko, S Boandoh, ...
Advanced Materials 33 (15), 2006601, 2021
632021
Visualizing point defects in transition-metal dichalcogenides using optical microscopy
HY Jeong, SY Lee, TH Ly, GH Han, H Kim, H Nam, Z Jiong, BG Shin, ...
Acs Nano 10 (1), 770-777, 2016
622016
Synthesis of high‐performance monolayer molybdenum disulfide at low temperature
JH Park, AY Lu, PC Shen, BG Shin, H Wang, N Mao, R Xu, SJ Jung, ...
Small Methods 5 (6), 2000720, 2021
382021
Absorption dichroism of monolayer 1T′-MoTe2 in visible range
GH Han, DH Keum, J Zhao, BG Shin, S Song, JJ Bae, J Lee, JH Kim, ...
2D Materials 3 (3), 031010, 2016
362016
Atomic and Electronic Structures of Graphene-decorated Graphitic Carbon Nitride (g-C3N4) as a Metal-free photocatalyst under Visible-light
T Jeong, H Piao, S Park, JH Yang, G Choi, Q Wu, HM Kang, HJ Woo, ...
Applied Catalysis B: Environmental 256, 117850, 2019
252019
Single-Crystalline Monolayer Graphene Wafer on Dielectric Substrate of SiON without Metal Catalysts
BG Shin, DH Boo, B Song, S Jeon, M Kim, S Park, ES An, JS Kim, ...
ACS Nano 13, 6662-6669, 2019
182019
Band engineering of bilayer graphene by metal atoms: First-principles calculations
DH Oh, BG Shin, JR Ahn
Applied Physics Letters 96 (23), 2010
122010
In-situ atomic level observation of the strain response of graphene lattice
JY Juo, BG Shin, W Stiepany, M Memmler, K Kern, SJ Jung
Scientific Reports 13 (1), 2451, 2023
62023
Atomic-registry-dependent electronic structures of sulfur vacancies in ReS2 studied by scanning tunneling microscopy/spectroscopy
SJ Jung, T Jeong, J Shim, S Park, J Park, BG Shin, YJ Song
Current Applied Physics 19 (3), 224-229, 2019
62019
Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors
BG Shin, JH Park, JY Juo, J Kong, SJ Jung
Nature Communications 14 (1), 2283, 2023
52023
Spontaneous assembly of ordered atomic wires with a long interwire distance on a stepped atomic template
BG Shin, MK Kim, DH Oh, I Song, JH Lee, SH Woo, CY Park, JR Ahn
Applied Physics Letters 102 (20), 201611, 2013
52013
Cascaded compression of size distribution of nanopores in monolayer graphene
J Wang, C Cheng, X Zheng, JC Idrobo, AY Lu, JH Park, BG Shin, SJ Jung, ...
Nature 623 (7989), 956-963, 2023
32023
Characterizing critical behavior and band tails on the metal-insulator transition in structurally disordered two-dimensional semiconductors: Autocorrelation and multifractal …
BG Shin, JH Park, J Kong, SJ Jung
Physical Review Research 5 (4), 043029, 2023
22023
Influence of orbital hybridization on the atomic and electronic structures in hydrogenated monolayer graphene
BG Shin, DH Oh, JR Ahn
Journal of the Korean Physical Society 60, 816-820, 2012
12012
Quintuple-period Si atomic wires with alternative double and triple modulations by metal: Mg/Si (557)
BG Shin, MK Kim, JH Lee, DH Oh, I Song, SH Woo, CY Park, JR Ahn
Surface science 606 (1-2), 57-61, 2012
12012
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