| Effect of work function difference between top and bottom electrodes on the resistive switching properties of SiN films SM Hong, HD Kim, HM An, TG Kim IEEE electron device letters 34 (9), 1181-1183, 2013 | 58 | 2013 |
| Recent advances and future prospects for memristive materials, devices, and systems MK Song, JH Kang, X Zhang, W Ji, A Ascoli, I Messaris, AS Demirkol, ... ACS nano 17 (13), 11994-12039, 2023 | 53 | 2023 |
| Unipolar resistive switching phenomena in fully transparent SiN-based memory cells HD Kim, HM An, SM Hong, TG Kim Semiconductor Science and Technology 27 (12), 125020, 2012 | 48 | 2012 |
| Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays HD Kim, MJ Yun, SM Hong, TG Kim Nanotechnology 25 (12), 125201, 2014 | 42 | 2014 |
| Forming‐free Si N‐based resistive switching memory prepared by RF sputtering HD Kim, HM An, SM Hong, TG Kim physica status solidi (a) 210 (9), 1822-1827, 2013 | 39 | 2013 |
| Resistive switching characteristics of sol–gel based ZnO nanorods fabricated on flexible substrates S Park, JH Lee, HD Kim, SM Hong, HM An, TG Kim physica status solidi (RRL)–Rapid Research Letters 7 (7), 493-496, 2013 | 33 | 2013 |
| Improved resistive switching properties by nitrogen doping in tungsten oxide thin films SM Hong, HD Kim, MJ Yun, JH Park, DS Jeon, TG Kim Thin Solid Films 583, 81-85, 2015 | 27 | 2015 |
| Improved resistive switching phenomena observed in SiNx‐based resistive switching memory through oxygen doping process JH Park, HD Kim, SM Hong, MJ Yun, DS Jeon, TG Kim physica status solidi (RRL)–Rapid Research Letters 8 (3), 239-242, 2014 | 25 | 2014 |
| Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells MJ Yun, HD Kim, S Man Hong, J Hyun Park, D Su Jeon, T Geun Kim Journal of Applied Physics 115 (9), 2014 | 18 | 2014 |
| Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility SM Hong, HD Kim, HM An, TG Kim Materials Research Bulletin 48 (12), 5080-5083, 2013 | 16 | 2013 |
| Pulse dependent threshold voltage variation of the ovonic threshold switch in cross-point memory S Ban, H Choi, W Lee, S Hong, H Zang, B Lee, M Kim, S Lee, H Lee, ... IEEE Electron Device Letters 41 (3), 373-376, 2020 | 13 | 2020 |
| Impact of roughness of bottom electrodes on the resistive switching properties of platinum/nickel nitride/nickel 1× 1 crossbar array resistive random access memory cells HD Kim, MJ Yun, SM Hong, JH Park, DS Jeon, TG Kim Microelectronic engineering 126, 169-172, 2014 | 13 | 2014 |
| PE-ALD of Ge 1− x S x amorphous chalcogenide alloys for OTS applications M Kim, Y Kim, M Lee, SM Hong, HK Kim, S Yoo, T Kim, S Chung, T Lee, ... Journal of Materials Chemistry C 9 (18), 6006-6013, 2021 | 12 | 2021 |
| Electronic device and method for driving the same S Hong, T Kim US Patent 10,431,267, 2019 | 12 | 2019 |
| Extremely high performance, high density 20nm self-selecting cross-point memory for Compute Express Link S Hong, H Choi, J Park, Y Bae, K Kim, W Lee, S Lee, H Lee, S Cho, J Ahn, ... 2022 International Electron Devices Meeting (IEDM), 18.6. 1-18.6. 4, 2022 | 10 | 2022 |
| Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing HD Kim, M Ju Yun, S Man Hong, HM An, T Geun Kim Journal of Vacuum Science & Technology B 31 (4), 2013 | 7 | 2013 |
| Variable resistive memory device and method of driving a variable resistive memory device KW Lee, SM Hong, TH Kim, HD Lee US Patent 10,964,382, 2021 | 6 | 2021 |
| Size-dependent resistive switching properties of the active region in nickel nitride-based crossbar array resistive random access memory HD Kim, MJ Yun, SM Hong, TG Kim Journal of nanoscience and nanotechnology 14 (12), 9088-9091, 2014 | 6 | 2014 |
| Amorphous Ge-Se-S chalcogenide alloys via post plasma sulfurization of atomic layer deposition GeSe for ovonic threshold switch applications S Jun, S Seo, S Park, TH Kim, M Lee, SM Hong, T Kim, S Chung, T Lee, ... Journal of Alloys and Compounds 947, 169514, 2023 | 4 | 2023 |
| Relaxation Oscillation Effect of the Ovonic Threshold Switch on the SET Characteristics of Phase-Change Memory in Cross-Point Structure SM Hong, M Kim, S Lee, SH Ban, H Zang, H Choi, T Kim IEEE Electron Device Letters 42 (12), 1759-1761, 2021 | 4 | 2021 |
