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Duo Mao
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Optimization of poly (vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics
D Mao, MA Quevedo-Lopez, H Stiegler, BE Gnade, HN Alshareef
Organic Electronics 11 (5), 925-932, 2010
1242010
Ferroelectric properties and polarization switching kinetic of poly (vinylidene fluoride-trifluoroethylene) copolymer
D Mao, BE Gnade, MA Quevedo-Lopez
Ferroelectrics-Physical Effects, 78-100, 2011
702011
Polarization behavior of poly (vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics
D Mao, I Mejia, H Stiegler, BE Gnade, MA Quevedo-Lopez
Journal of Applied Physics 108 (9), 094102, 2010
462010
Experimental and modeling study of the capacitance–voltage characteristics of metal–insulator–semiconductor capacitor based on pentacene/parylene
WT Wondmagegn, NT Satyala, I Mejia-Silva, D Mao, S Gowrisanker, ...
Thin Solid Films 519 (13), 4313-4318, 2011
222011
Fatigue characteristics of poly (vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for flexible electronics memory applications
D Mao, I Mejia, H Stiegler, BE Gnade, MA Quevedo-Lopez
Organic Electronics 12 (8), 1298-1303, 2011
212011
Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics
D Mao, I Mejia, AL Salas-Villasenor, M Singh, H Stiegler, BE Gnade, ...
Organic electronics 14 (2), 505-510, 2013
192013
Graphene-ferroelectric hybrid devices for multi-valued memory system
S Jandhyala, G Mordi, D Mao, MW Ha, MA Quevedo-Lopez, BE Gnade, ...
Applied Physics Letters 103 (2), 022903, 2013
182013
3DNAND GIDL-assisted body biasing for erase enabling CMOS under array (CUA) architecture
C Caillat, K Beaman, A Bicksler, E Camozzi, T Ghilardi, G Huang, H Liu, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
172017
Numerical study of non-circular pillar effect in 3D-NAND flash memory cells
A Fayrushin, H Liu, A Mauri, G Carnevale, H Cho, D Mao
2019 IEEE Workshop on Microelectronics and Electron Devices (WMED), 1-4, 2019
12019
A practical model to analytically characterize the polarization hysteresis of ferroelectric capacitors
B Shrestha, R Pieper, W Wondmagegn, D Mao, I Mejia, H Stiegler, ...
Proceedings of the 2012 44th Southeastern Symposium on System Theory (SSST …, 2012
12012
Low temperature processed two-transistor-two-capacitor-based ferroelectric random access memory
D Mao, I Mejia, AL Salas-Villasenor, HJ Stiegler, BE Gnade, ...
IEEE Transactions on Electron Devices 61 (10), 3442-3447, 2014
2014
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