| Optimization of poly (vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics D Mao, MA Quevedo-Lopez, H Stiegler, BE Gnade, HN Alshareef Organic Electronics 11 (5), 925-932, 2010 | 132 | 2010 |
| Ferroelectric properties and polarization switching kinetic of poly (vinylidene fluoride-trifluoroethylene) copolymer D Mao, BE Gnade, MA Quevedo-Lopez Ferroelectrics-Physical Effects, 78-100, 2011 | 91 | 2011 |
| Polarization behavior of poly (vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics D Mao, I Mejia, H Stiegler, BE Gnade, MA Quevedo-Lopez Journal of Applied Physics 108 (9), 2010 | 48 | 2010 |
| 3DNAND GIDL-assisted body biasing for erase enabling CMOS under array (CUA) architecture C Caillat, K Beaman, A Bicksler, E Camozzi, T Ghilardi, G Huang, H Liu, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 38 | 2017 |
| Experimental and modeling study of the capacitance–voltage characteristics of metal–insulator–semiconductor capacitor based on pentacene/parylene WT Wondmagegn, NT Satyala, I Mejia-Silva, D Mao, S Gowrisanker, ... Thin Solid Films 519 (13), 4313-4318, 2011 | 23 | 2011 |
| Fatigue characteristics of poly (vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for flexible electronics memory applications D Mao, I Mejia, H Stiegler, BE Gnade, MA Quevedo-Lopez Organic Electronics 12 (8), 1298-1303, 2011 | 22 | 2011 |
| Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics D Mao, I Mejia, AL Salas-Villasenor, M Singh, H Stiegler, BE Gnade, ... Organic electronics 14 (2), 505-510, 2013 | 21 | 2013 |
| Graphene-ferroelectric hybrid devices for multi-valued memory system S Jandhyala, G Mordi, D Mao, MW Ha, MA Quevedo-Lopez, BE Gnade, ... Applied Physics Letters 103 (2), 2013 | 20 | 2013 |
| Numerical study of non-circular pillar effect in 3D-NAND flash memory cells A Fayrushin, H Liu, A Mauri, G Carnevale, H Cho, D Mao 2019 IEEE Workshop on Microelectronics and Electron Devices (WMED), 1-4, 2019 | 3 | 2019 |
| A practical model to analytically characterize the polarization hysteresis of ferroelectric capacitors B Shrestha, R Pieper, W Wondmagegn, D Mao, I Mejia, H Stiegler, ... Proceedings of the 2012 44th Southeastern Symposium on System Theory (SSST …, 2012 | 1 | 2012 |
| Low temperature processed two-transistor-two-capacitor-based ferroelectric random access memory D Mao, I Mejia, AL Salas-Villasenor, HJ Stiegler, BE Gnade, ... IEEE Transactions on Electron Devices 61 (10), 3442-3447, 2014 | | 2014 |
Bruce GnadeSMUVerified email at smu.edu
