| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 573 | 2019 |
| Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications D Ielmini, R Waser John Wiley & Sons, 2015 | 564 | 2015 |
| Intrinsic switching variability in HfO2RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ... 2013 5th IEEE International Memory Workshop, 30-33, 2013 | 247 | 2013 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suņe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 147 | 2021 |
| Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... 2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013 | 139 | 2013 |
| A framework to practical predictive maintenance modeling for multi-state systems CM Tan, N Raghavan Reliability Engineering & System Safety 93 (8), 1138-1150, 2008 | 115 | 2008 |
| Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ... Microelectronic Engineering 147, 171-175, 2015 | 113 | 2015 |
| Heuristic Kalman optimized particle filter for remaining useful life prediction of lithium-ion battery PLT Duong, N Raghavan Microelectronics Reliability 81, 232-243, 2018 | 100 | 2018 |
| Intrinsic nanofilamentation in resistive switching X Wu, D Cha, M Bosman, N Raghavan, DB Migas, VE Borisenko, ... Journal of Applied Physics 113 (11), 2013 | 86 | 2013 |
| Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013 | 79 | 2013 |
| Data-driven design space exploration and exploitation for design for additive manufacturing Y Xiong, PLT Duong, D Wang, SI Park, Q Ge, N Raghavan, DW Rosen Journal of Mechanical Design 141 (10), 101101, 2019 | 75 | 2019 |
| Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability N Raghavan, R Degraeve, A Fantini, L Goux, DJ Wouters, ... 2013 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2013 | 67 | 2013 |
| Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films A Ranjan, N Raghavan, SJ O’shea, S Mei, M Bosman, K Shubhakar, ... Scientific reports 8 (1), 2854, 2018 | 63 | 2018 |
| Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices X Wu, S Mei, M Bosman, N Raghavan, X Zhang, D Cha, K Li, KL Pey Advanced Electronic Materials 1 (11), 1500130, 2015 | 56 | 2015 |
| Nanostructure and nanomaterial characterization, growth mechanisms, and applications CI Ossai, N Raghavan Nanotechnology Reviews 7 (2), 209-231, 2018 | 55 | 2018 |
| Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM N Raghavan, KL Pey, W Liu, X Wu, X Li, M Bosman Microelectronic Engineering 88 (7), 1124-1128, 2011 | 55 | 2011 |
| Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ... Microelectronic engineering 109, 364-369, 2013 | 53 | 2013 |
| Hourglass concept for RRAM: A dynamic and statistical device model R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, YY Chen, ... Proceedings of the 21th International Symposium on the Physical and Failure …, 2014 | 52 | 2014 |
| Statistical insight into controlled forming and forming free stacks for HfOx RRAM N Raghavan, A Fantini, R Degraeve, PJ Roussel, L Goux, B Govoreanu, ... Microelectronic Engineering 109, 177-181, 2013 | 50 | 2013 |
| RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx RRAM N Raghavan, R Degraeve, L Goux, A Fantini, DJ Wouters, ... 2013 Symposium on VLSI Technology, T164-T165, 2013 | 50 | 2013 |
Michel BosmanNational University of SingaporeVerified email at nus.edu.sg
