| A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review MA Alam, BK Mahajan, YP Chen, W Ahn, H Jiang, SH Shin IEEE Transactions on Electron Devices 66 (11), 4556-4565, 2019 | 41 | 2019 |
| Electrothermal performance limit of β-Ga2O3 field-effect transistors BK Mahajan, YP Chen, J Noh, PD Ye, MA Alam Applied Physics Letters 115 (17), 2019 | 31 | 2019 |
| Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors YP Chen, M Si, BK Mahajan, Z Lin, DY Peide, MA Alam IEEE Electron Device Letters 43 (2), 232-235, 2021 | 17 | 2021 |
| A novel ‘IV spectroscopy’technique to deconvolve threshold voltage and mobility degradation in LDMOS transistors YP Chen, BK Mahajan, D Varghese, S Krishnan, V Reddy, MA Alam 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 11 | 2020 |
| Self-heating and reliability-aware “intrinsic” safe operating Area of wide bandgap semiconductors—an analytical approach BK Mahajan, YP Chen, N Zagni, MA Alam IEEE Transactions on Device and Materials Reliability 21 (4), 518-527, 2021 | 7 | 2021 |
| Quantifying region-specific hot carrier degradation in LDMOS transistors using a novel charge pumping technique BK Mahajan, YP Chen, D Varghese, V Reddy, S Krishnan, MA Alam 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 7 | 2021 |
| Super single pulse charge pumping technique for profiling interfacial defects YP Chen, BK Mahajan, D Varghese, S Krishnan, V Reddy, MA Alam IEEE Transactions on Electron Devices 68 (2), 726-732, 2021 | 7 | 2021 |
| Design and Optimization of -Ga2O3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective BK Mahajan, YP Chen, W Ahn, N Zagni, MA Alam 2018 IEEE International Electron Devices Meeting (IEDM), 24.6. 1-24.6. 4, 2018 | 7 | 2018 |
| A junctionless silicon carbide transistor for harsh environment applications RK Baruah, BK Mahajan, YP Chen, RP Paily Journal of Electronic Materials 50 (10), 5682-5690, 2021 | 6 | 2021 |
| An analytical model of hot carrier degradation in LDMOS transistors: Rediscovery of universal scaling BK Mahajan, YP Chen, MA Alam IEEE Transactions on Electron Devices 68 (8), 3923-3929, 2021 | 6 | 2021 |
| High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics SH Shin, YP Chen, W Ahn, H Guo, B Williams, J West, T Bonifield, ... 2018 IEEE International Reliability Physics Symposium (IRPS), P-GD. 9-1-P-GD …, 2018 | 4 | 2018 |
| Three-point I–V spectroscopy deconvolves region-specific degradations in LDMOS transistors YP Chen, BK Mahajan, D Varghese, S Krishnan, V Reddy, MA Alam Applied Physics Letters 119 (12), 2021 | 3 | 2021 |
| An analytical transient Joule heating model for an interconnect in a modern IC: Material selection (Cu, Co, Ru) and cooling strategies W Ahn, YP Chen, MA Alam 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 2 | 2019 |
| Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole YP Chen, V Su, ML Lee, YH You, PH Chen, RM Lin, CH Kuan Nanotechnology VII 9519, 92-98, 2015 | 1 | 2015 |
| Short circuit current improvement of Si HIT solar cell by optimal and “chess board” like 1-D light trapping periodical grating structure ML Lee, C Nien, HC Lin, YH You, VC Su, PH Chen, HB Yang, YP Chen, ... CLEO: Applications and Technology, JTh2A. 1, 2014 | 1 | 2014 |
| Utilizing two-dimensional photonic crystals to investigate the correlation between the air duty cycle and the light extraction efficiency of InGaN-based light-emitting diodes ML Lee, YH You, CJ Hsieh, VC Su, C Nien, PH Chen, HC Lin, HB Yang, ... CLEO: Science and Innovations, SM1J. 6, 2014 | | 2014 |
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue UniversityVerified email at purdue.edu
