| Epitaxial growth of alpha gallium oxide thin films on sapphire substrates for electronic and optoelectronic devices: Progress and perspective D Yang, B Kim, TH Eom, Y Park, HW Jang Electronic Materials Letters 18 (2), 113-128, 2022 | 36 | 2022 |
| α-gallium oxide films on microcavity-embedded sapphire substrates grown by mist chemical vapor deposition for high-breakdown voltage Schottky diodes D Yang, B Kim, J Oh, TH Lee, J Ryu, S Park, S Kim, E Yoon, Y Park, ... ACS Applied Materials & Interfaces 14 (4), 5598-5607, 2022 | 17 | 2022 |
| Selective area growth of single-crystalline alpha-gallium oxide on a sapphire nanomembrane by mist chemical vapor deposition D Yang, B Kim, TH Lee, J Oh, S Lee, W Sohn, E Yoon, Y Park, HW Jang ACS Applied Electronic Materials 3 (10), 4328-4336, 2021 | 17 | 2021 |
| Nonvolatile Control of Metal–Insulator Transition in VO2 by Ferroelectric Gating YJ Lee, K Hong, K Na, J Yang, TH Lee, B Kim, CW Bark, JY Kim, SH Park, ... Advanced Materials 34 (32), 2203097, 2022 | 15 | 2022 |
| Strain relaxation and dislocation annihilation in compositionally graded α-(AlxGa1-x) 2O3 layer for high voltage α-Ga2O3 power devices B Kim, D Yang, W Sohn, S Lee, T Jang, E Yoon, Y Park, HW Jang Acta Materialia, 117423, 2021 | 12 | 2021 |
| Enhancing Performance of Ultraviolet C Photodetectors Through Single‐Domain Epitaxy of Monoclinic β‐Ga2O3 Films and Tailored Anti‐Reflection Coating B Kim, S Kim, TH Lee, D Yang, D Lee, W Sohn, E Yoon, Y Park, HW Jang Small Methods 8 (1), 2300933, 2024 | | 2024 |
