| Review of recent developments in amorphous oxide semiconductor thin-film transistor devices JS Park, WJ Maeng, HS Kim, JS Park Thin Solid Films 520 (6), 1679-1693, 2012 | 1193 | 2012 |
| Applications of atomic layer deposition to nanofabrication and emerging nanodevices H Kim, WJ Maeng Thin Solid Films 517 (8), 2563-2580, 2009 | 758 | 2009 |
| Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode SJ Park, WH Kim, WJ Maeng, H Kim Microelectronic Engineering 85 (1), 39-44, 2008 | 131 | 2008 |
| Thermal and plasma-enhanced ALD of Ta and Ti oxide thin films from alkylamide precursors WJ Maeng, H Kim Electrochemical and solid-state letters 9 (6), G191, 2006 | 119 | 2006 |
| The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination JS Park, TS Kim, KS Son, KH Lee, WJ Maeng, HS Kim, ES Kim, KB Park, ... Applied Physics Letters 96 (26), 2010 | 111 | 2010 |
| Studies on optical, structural and electrical properties of atomic layer deposited Al-doped ZnO thin films with various Al concentrations and deposition temperatures WJ Maeng, J Lee, JH Lee, KB Chung, JS Park Journal of Physics D: Applied Physics 44 (44), 445305, 2011 | 93 | 2011 |
| Growth characteristics and electrical properties of La 2 O 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition WH Kim, WJ Maeng, KJ Moon, JM Myoung, H Kim Thin Solid Films 519 (1), 362-366, 2010 | 80 | 2010 |
| Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis (cyclopentadienyl) ruthenium and oxygen SJ Park, WH Kim, WJ Maeng, YS Yang, CG Park, H Kim, KN Lee, ... Thin Solid Films 516 (21), 7345-7349, 2008 | 71 | 2008 |
| Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties W Maeng, SH Lee, JD Kwon, J Park, JS Park Ceramics International 42 (4), 5517-5522, 2016 | 70 | 2016 |
| Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants WJ Maeng, SJ Park, H Kim Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 70 | 2006 |
| The conducting tin oxide thin films deposited via atomic layer deposition using Tetrakis-dimethylamino tin and peroxide for transparent flexible electronics D Choi, WJ Maeng, JS Park Applied Surface Science 313, 585-590, 2014 | 66 | 2014 |
| Highly conducting, transparent, and flexible indium oxide thin film prepared by atomic layer deposition using a new liquid precursor Et2InN (SiMe3) 2 WJ Maeng, D Choi, KB Chung, W Koh, GY Kim, SY Choi, JS Park ACS applied materials & interfaces 6 (20), 17481-17488, 2014 | 64 | 2014 |
| Transistors, Methods of Manufacturing Transistors, and Electronic Devices Including Transistors ES Kim, HS Kim, TS Kim, KH Lee, SY Lee, W Maeng, JS Park, KB Park, ... EP Patent App. 20,110,161,929, 2011 | 62* | 2011 |
| Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition WH Kim, WJ Maeng, MK Kim, J Gatineau, H Kim Journal of The Electrochemical Society 158 (10), G217, 2011 | 58 | 2011 |
| Low pressure chemical vapor deposition of aluminum-doped zinc oxide for transparent conducting electrodes WH Kim, WJ Maeng, MK Kim, H Kim Journal of The Electrochemical Society 158 (8), D495, 2011 | 58 | 2011 |
| Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant WJ Maeng, DW Choi, J Park, JS Park Journal of Alloys and Compounds 649, 216-221, 2015 | 57 | 2015 |
| Effect of Al concentration on the electrical characteristics of solution-processed Al doped ZnSnO thin film transistors HJ Jeon, WJ Maeng, JS Park Ceramics International 40 (6), 8769-8774, 2014 | 56 | 2014 |
| Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors BE Park, IK Oh, C Mahata, CW Lee, D Thompson, WJ Maeng, H Kim Journal of Alloys and Compounds 722, 307-312, 2017 | 52 | 2017 |
| Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant WJ Maeng, D Choi, J Park, JS Park Ceramics International 41 (9), 10782-10787, 2015 | 50 | 2015 |
| Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition WH Kim, MK Kim, WJ Maeng, J Gatineau, V Pallem, C Dussarrat, A Noori, ... Journal of The Electrochemical Society 158 (8), G169, 2011 | 46 | 2011 |
