Hyun S. Kum
Cited by
Cited by
Path towards graphene commercialization from lab to market
W Kong, H Kum, SH Bae, J Shim, H Kim, L Kong, Y Meng, K Wang, C Kim, ...
Nature nanotechnology 14 (10), 927-938, 2019
Integration of bulk materials with two-dimensional materials for physical coupling and applications
SH Bae, H Kum, W Kong, Y Kim, C Choi, B Lee, P Lin, Y Park, J Kim
Nature materials 18 (6), 550-560, 2019
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ...
Science 362 (6415), 665-670, 2018
Heterogeneous integration of single-crystalline complex-oxide membranes
HS Kum, H Lee, S Kim, S Lindemann, W Kong, K Qiao, P Chen, J Irwin, ...
Nature 578 (7793), 75-81, 2020
Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices
H Kum, D Lee, W Kong, H Kim, Y Park, Y Kim, Y Baek, SH Bae, K Lee, ...
Nature Electronics 2 (10), 439-450, 2019
Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices
J Shim, DH Kang, Y Kim, H Kum, W Kong, SH Bae, I Almansouri, K Lee, ...
Carbon 133, 78-89, 2018
Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy
SH Bae, K Lu, Y Han, S Kim, K Qiao, C Choi, Y Nie, H Kim, HS Kum, ...
Nature nanotechnology 15 (4), 272-276, 2020
Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts
H Kum, J Heo, S Jahangir, A Banerjee, W Guo, P Bhattacharya
Applied Physics Letters 100 (18), 182407, 2012
Long-term reliable physical health monitoring by sweat pore–inspired perforated electronic skins
H Yeon, H Lee, Y Kim, D Lee, Y Lee, JS Lee, J Shin, C Choi, JH Kang, ...
Science Advances 7 (27), eabg8459, 2021
Impact of 2D–3D heterointerface on remote epitaxial interaction through graphene
H Kim, K Lu, Y Liu, HS Kum, KS Kim, K Qiao, SH Bae, S Lee, YJ Ji, ...
ACS nano 15 (6), 10587-10596, 2021
Spin diffusion in bulk GaN measured with MnAs spin injector
S Jahangir, F Doğan, H Kum, A Manchon, P Bhattacharya
Physical Review B 86 (3), 035315, 2012
Wafer-scale thermodynamically stable GaN nanorods via two-step self-limiting epitaxy for optoelectronic applications
H Kum, HK Seong, W Lim, D Chun, Y Kim, Y Park, G Yoo
Scientific reports 7 (1), 1-8, 2017
Display panels and multivision apparatuses
US Patent App. 15/333,692, 2016
Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping
MA Baboli, MA Slocum, H Kum, TS Wilhelm, SJ Polly, SM Hubbard, ...
CrystEngComm 21 (4), 602-615, 2019
Two-step photon absorption in InP/InGaP quantum dot solar cells
H Kum, Y Dai, T Aihara, MA Slocum, T Tayagaki, A Fedorenko, SJ Polly, ...
Applied Physics Letters 113 (4), 043902, 2018
SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes
W Lim, H Kum, YJ Choi, SH Sim, JH Yeon, JS Kim, HK Seong, NG Cha, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2016
Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors
CH Lee, Y Park, S Youn, MJ Yeom, HS Kum, J Chang, J Heo, G Yoo
Advanced Functional Materials 32 (4), 2107992, 2022
Electric field control of magnetoresistance in a lateral InAs quantum well spin valve
H Kum, D Basu, P Bhattacharya, W Guo
Applied Physics Letters 95 (21), 212503, 2009
Epitaxial Lift-off (ELO) of InGaP/GaAs/InGaAs solar cells with quantum dots in GaAs middle sub-cell
SR Tatavarti, ZS Bittner, A Wibowo, MA Slocum, G Nelson, H Kum, ...
Solar Energy Materials and Solar Cells 185, 153-157, 2018
Nanostructure semiconductor light emitting device
NG Cha, HS Kum, JB Seo, DH Lee
US Patent 9,461,205, 2016
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Articles 1–20