| 2D transition metal dichalcogenide heterostructures for p‐and n‐type photovoltaic self‐powered gas sensor Y Kim, S Lee, JG Song, KY Ko, WJ Woo, SW Lee, M Park, H Lee, Z Lee, ... Advanced Functional Materials 30 (43), 2003360, 2020 | 189 | 2020 |
| Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode SJ Park, WH Kim, WJ Maeng, H Kim Microelectronic engineering 85 (1), 39-44, 2008 | 131 | 2008 |
| Area-selective atomic layer deposition of metal oxides on noble metals through catalytic oxygen activation JA Singh, NFW Thissen, WH Kim, H Johnson, WMM Kessels, AA Bol, ... Chemistry of Materials 30 (3), 663-670, 2018 | 130 | 2018 |
| Ru nanostructure fabrication using an anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition WH Kim, SJ Park, JY Son, H Kim Nanotechnology 19 (4), 045302, 2008 | 122 | 2008 |
| Area-selective atomic layer deposition using Si precursors as inhibitors R Khan, B Shong, BG Ko, JK Lee, H Lee, JY Park, IK Oh, SS Raya, ... Chemistry of Materials 30 (21), 7603-7610, 2018 | 120 | 2018 |
| Atomic Layer Deposition of Ni Thin Films and Application to Area Selective Deposition WH Kim, K Heo, YK Lee, TM Chung, CG Kim, S Hong, J Heo, H Kim Journal of The Electrochemical Society 158 (1), D1-D5, 2011 | 114 | 2011 |
| A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation WH Kim, FS Minaye Hashemi, AJM Mackus, J Singh, Y Kim, ... ACS nano 10 (4), 4451-4458, 2016 | 109 | 2016 |
| Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns S Seo, BC Yeo, SS Han, CM Yoon, JY Yang, J Yoon, C Yoo, H Kim, Y Lee, ... ACS applied materials & interfaces 9 (47), 41607–41617, 2017 | 106 | 2017 |
| High Quality Area-Selective Atomic Layer Deposition Co Using Ammonia Gas as a Reactant HBR Lee, WH Kim, JW Lee, JM Kim, K Heo, IC Hwang, Y Park, S Hong, ... Journal of The Electrochemical Society 157 (1), D10-D15, 2010 | 99 | 2010 |
| Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide AJM Mackus, C MacIsaac, WH Kim, SF Bent The Journal of Chemical Physics 146, 052802, 2016 | 86 | 2016 |
| Low-temperature Atomic Layer Deposition of TiO2, Al2O3, and ZnO Thin Films T Nam, J Kim, M Kim, H Kim, W Kim Journal of the Korean Physical Society, 59 (2), 452-457, 2011 | 86 | 2011 |
| Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition WH Kim, WJ Maeng, KJ Moon, JM Myoung, H Kim Thin Solid Films 519 (1), 362-366, 2010 | 80 | 2010 |
| Plasma-Enhanced Atomic Layer Deposition of Ni HBR Lee, SH Bang, WH Kim, GH Gu, YK Lee, TM Chung, CG Kim, ... Japanese Journal of Applied Physics 49 (5S2), 05FA11, 2010 | 72 | 2010 |
| Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric WH Kim, IK Oh, MK Kim, G Lee, CW Lee, J Park, C Lansalot-Matras, ... Applied Surface Science 297, 16-21, 2014 | 71 | 2014 |
| Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen SJ Park, WH Kim, WJ Maeng, YS Yang, CG Park, H Kim, KN Lee, ... Thin Solid Films 516 (21), 7345-7349, 2008 | 71 | 2008 |
| Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas WH Kim, SJ Park, D Kim, H Kim Journal of the Korean Physical Society 55 (1), 32-37, 2009 | 66 | 2009 |
| Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition WH Kim, WJ Maeng, MK Kim, J Gatineau, H Kim Journal of The Electrochemical Society 158 (10), G217-G220, 2011 | 58 | 2011 |
| Low pressure chemical vapor deposition of aluminum-doped zinc oxide for transparent conducting electrodes WH Kim, WJ Maeng, MK Kim, H Kim Journal of The Electrochemical Society 158 (8), D495, 2011 | 58 | 2011 |
| Semiconductor devices and methods of fabricating semiconductor devices KH Kim, J Lee, WH Kim, N Lee US Patent App. 14/489,900, 2015 | 57 | 2015 |
| Inherently Area‐Selective Atomic Layer Deposition of SiO2 Thin Films to Confer Oxide Versus Nitride Selectivity J Lee, JM Lee, H Oh, C Kim, J Kim, DH Kim, B Shong, TJ Park, WH Kim Advanced Functional Materials 31 (33), 2102556, 2021 | 54 | 2021 |
Hyungjun KimSchool of Electrical abd Electronic Engineering, Yonsei UniversityVerified email at yonsei.ac.kr
