| A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak -Core DW Park, DR Utomo, BH Lam, SG Lee, JP Hong IEEE Journal of Solid-State Circuits 54 (6), 1613-1623, 2019 | 59 | 2019 |
| Nonlinear analysis of nonresonant THz response of MOSFET and implementation of a high-responsivity cross-coupled THz detector MIW Khan, S Kim, DW Park, HJ Kim, SK Han, SG Lee IEEE Transactions on Terahertz Science and Technology 8 (1), 108-120, 2017 | 41 | 2017 |
| A 280-/300-GHz three-stage amplifiers in 65-nm CMOS with 12-/9-dB gain and 1.6/1.4% PAE while dissipating 17.9 mW DW Park, DR Utomo, BH Lam, JP Hong, SG Lee IEEE Microwave and Wireless Components Letters 28 (1), 79-81, 2017 | 37 | 2017 |
| A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched Gmax-Core B Yun, DW Park, HU Mahmood, D Kim, SG Lee IEEE Transactions on Microwave Theory and Techniques 69 (5), 2519-2530, 2021 | 31 | 2021 |
| A D-Band Low-Power and High-Efficiency Frequency Multiply-by-9 FMCW Radar Transmitter in 28-nm CMOS S Park, DW Park, K Vaesen, A Kankuppe, S Sinha, B van Liempd, ... IEEE Journal of Solid-State Circuits 57 (7), 2114-2129, 2022 | 21 | 2022 |
| MOSFET characteristics for terahertz detector application from on-wafer measurement S Kim, DW Park, KY Choi, SG Lee IEEE Transactions on Terahertz Science and Technology 5 (6), 1068-1077, 2015 | 19 | 2015 |
| A 67-mW D-Band FMCW I/Q Radar Receiver With an N-Path Spillover Notch Filter in 28-nm CMOS A Kankuppe, S Park, K Vaesen, DW Park, B Van Liempd, S Sinha, ... IEEE Journal of Solid-State Circuits 57 (7), 1982-1996, 2022 | 13 | 2022 |
| A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core DW Park, DR Utomo, B Yun, HU Mahmood, SG Lee IEEE Access 9, 99039-99049, 2021 | 13 | 2021 |
| Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-Gmax Gain Boosting Technique DW Park, DR Utomo, B Yun, HU Mahmood, JP Hong, SG Lee IEEE Journal of Solid-State Circuits, 2021 | 13 | 2021 |
| A 250-GHz 12.6-dB Gain and 3.8-dBm Psat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based Gmax-Core B Yun, DW Park, WJ Choi, HU Mahmood, SG Lee IEEE Microwave and Wireless Components Letters 31 (3), 292-295, 2021 | 13 | 2021 |
| A 230–260GHz wideband amplifier in 65nm CMOS based on dual-peak Gmax-core DW Park, DR Utomo, JP Hong, SG Lee 2017 Symposium on VLSI Circuits, C300-C301, 2017 | 10 | 2017 |
| A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-Gmax Gain Boosting Technique DW Park, DR Utomo, JP Hong, K Vaesen, P Wambacq, SG Lee 2020 IEEE Symposium on VLSI Circuits, 1-2, 2020 | 9 | 2020 |
| A 135-155 GHz 9.7%/16.6% DC-RF/DC-EIRP Efficiency Frequency Multiply-by-9 FMCW Transmitter in 28 nm CMOS S Park, DW Park, K Vaesen, A Kankuppe, B van Liempd, P Wambacq, ... 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 15-18, 2021 | 8 | 2021 |
| High-power 268-GHz push-push transformer-based oscillator with capacitive degeneration DR Utomo, DW Park, SG Lee, JP Hong IEEE Microwave and Wireless Components Letters 28 (7), 612-614, 2018 | 7 | 2018 |
| 280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting B Yun, DW Park, CG Choi, HJ Song, SG Lee 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 91-94, 2022 | 6 | 2022 |
| Effects of parasitic source/drain junction area on terahertz responsivity of MOSFET detector S Kim, MIW Khan, DW Park, SG Lee, KR Kim IEEE Transactions on Terahertz Science and Technology 8 (6), 681-687, 2018 | 6 | 2018 |
| 4.1 A 16GHz, Frequency Error, Background-Calibrated, Duty-Cycled FMCW Charge-Pump PLL PT Renukaswamy, K Vaesen, N Markulic, V Derudder, DW Park, ... 2023 IEEE International Solid-State Circuits Conference (ISSCC), 74-76, 2023 | 5 | 2023 |
| 0.5 and 1.5 THz monolithic imagers in a 65 nm CMOS adopting a VCO-based signal processing S Kim, KY Choi, DW Park, JM Kim, SK Han, SG Lee 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC), 149-152, 2017 | 5 | 2017 |
| A 293/440 GHz push-push double feedback oscillators with 5.0/− 3.9 dBm output power and 2.9/0.6% DC-to-RF efficiency in 65 nm CMOS DR Utomo, DW Park, B Yun, SG Lee 2020 IEEE Symposium on VLSI Circuits, 1-2, 2020 | 4 | 2020 |
| A 201 and 283 GHz Dual-Band Amplifier in 65 nm CMOS Adopting Dual-Frequency -Core with Dual-Band Matching DW Park, B Yun, DR Utomo, JP Hong, SG Lee IEEE Transactions on Terahertz Science and Technology, 2023 | 3 | 2023 |
Dzuhri Radityo UtomoDepartment of Electrical and Information Engineering, Universitas Gadjah Madaugm.ac.id의 이메일 확인됨
