| Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices JH Yum, T Akyol, M Lei, T Hudnall, G Bersuker, M Downer, CW Bielawski, ... Journal of Applied Physics 109 (6), 2011 | 51 | 2011 |
| A study of highly crystalline novel beryllium oxide film using atomic layer deposition JH Yum, T Akyol, M Lei, DA Ferrer, TW Hudnall, M Downer, CW Bielawski, ... Journal of Crystal Growth 334 (1), 126-133, 2011 | 37 | 2011 |
| Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices JH Yum, T Akyol, DA Ferrer, JC Lee, SK Banerjee, M Lei, M Downer, ... Journal of Vacuum Science & Technology A 29 (6), 2011 | 33 | 2011 |
| Epitaxial ALD BeO: efficient oxygen diffusion barrier for EOT scaling and reliability improvement JH Yum, G Bersuker, T Akyol, DA Ferrer, M Lei, KW Park, TW Hudnall, ... IEEE transactions on electron devices 58 (12), 4384-4392, 2011 | 30 | 2011 |
| Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates JH Yum, T Akyol, M Lei, DA Ferrer, TW Hudnall, M Downer, CW Bielawski, ... Thin Solid Films, 2011 | 26 | 2011 |
| Charge trapping defects in Si/SiO2/Hf (1− x) SixO2 film stacks characterized by spectroscopic second-harmonic generation J Price, M Lei, PS Lysaght, G Bersuker, MC Downer Journal of Vacuum Science & Technology B 29 (4), 2011 | 25 | 2011 |
| Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si (100) M Lei, JH Yum, J Price, TW Hudnall, CW Bielawski, SK Banerjee, ... Applied Physics Letters 100 (12), 2012 | 24 | 2012 |
| Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation M Lei, J Price, MC Downer Applied Physics Letters 96 (24), 2010 | 22 | 2010 |
| Role of photo-assisted tunneling in time-dependent second-harmonic generation from Si surfaces with ultrathin oxides YQ An, J Price, M Lei, MC Downer Applied Physics Letters 102 (5), 2013 | 19 | 2013 |
| Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric JH Yum, T Akyol, M Lei, DA Ferrer, TW Hudnall, M Downer, CW Bielawski, ... Applied Physics Letters 99, 033502, 2011 | 17 | 2011 |
| Second harmonic generation (shg) optical inspection system designs M Lei US Patent 11,946,863, 2024 | 12 | 2024 |
| Field-effect passivation of Si by ALD-Al2O3: second harmonic generation monitoring and simulation D Damianos, G Vitrant, A Kaminski-Cachopo, D Blanc-Pelissier, ... Journal of Applied Physics 124 (12), 2018 | 10 | 2018 |
| Second-harmonic microscopy of strain fields around through-silicon-vias Y Cho, F Shafiei, BS Mendoza, M Lei, T Jiang, PS Ho, MC Downer Applied Physics Letters 108 (15), 2016 | 10 | 2016 |
| Application of backscattered electron imaging for process development in advanced technology nodes M Lei, K Wu, H Nguyen, M King, H Xiao, D Spivak, J Brown, O Moreau, ... 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2015 | 10 | 2015 |
| Systems and methods for determining characteristics of semiconductor devices M Lei | 9 | 2019 |
| Characterization of anti-phase boundaries in hetero-epitaxial polar-on-nonpolar semiconductor films by optical second-harmonic generation M Lei, J Price, WE Wang, MH Wong, R Droopad, P Kirsch, G Bersuker, ... Applied Physics Letters 102 (15), 2013 | 9 | 2013 |
| Band offsets of atomic layer deposited Al2O3 and HfO2 on Si measured by linear and nonlinear internal photoemission M Lei, JH Yum, SK Banerjee, G Bersuker, MC Downer physica status solidi (b) 249 (6), 1160-1165, 2012 | 9 | 2012 |
| Field-biased nonlinear optical metrology using corona discharge source S Ma, S Kim, JH Cho, M Lei US Patent App. 16/396,227, 2020 | 8 | 2020 |
| Charge dynamics effect for detection of voltage contrast defect and determination of shorting location M Lei, MIN Byoung-Gi US Patent 9,735,064, 2017 | 6 | 2017 |
| Detection of metallic buried void by effective density contrast mode M Lei, K Wu, Q Tian, K Gao, Y Chen, H Hu, D Tomlinson, C Lei, Y Zhao Metrology, Inspection, and Process Control for Microlithography XXX 9778 …, 2016 | 6 | 2016 |
