| Self-induced growth of vertical free-standing InAs nanowires on Si (111) by molecular beam epitaxy G Koblmüller, S Hertenberger, K Vizbaras, M Bichler, F Bao, JP Zhang, ... Nanotechnology 21 (36), 365602, 2010 | 145 | 2010 |
| Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers K Vizbaras, MC Amann Semiconductor Science and Technology 27 (3), 032001, 2012 | 115 | 2012 |
| III–V-on-silicon photonic integrated circuits for spectroscopic sensing in the 2–4 μm wavelength range R Wang, A Vasiliev, M Muneeb, A Malik, S Sprengel, G Boehm, ... Sensors 17 (8), 1788, 2017 | 98 | 2017 |
| High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111) S Hertenberger, S Funk, K Vizbaras, A Yadav, D Rudolph, J Becker, ... Applied Physics Letters 101 (4), 2012 | 63 | 2012 |
| Type-II InP-based lasers emitting at 2.55 μm S Sprengel, A Andrejew, K Vizbaras, T Gruendl, K Geiger, G Boehm, ... Applied Physics Letters 100 (4), 2012 | 56 | 2012 |
| Compact GaSb/silicon-on-insulator 2.0 x μm widely tunable external cavity lasers R Wang, A Malik, I Šimonytė, A Vizbaras, K Vizbaras, G Roelkens Optics express 24 (25), 28977-28986, 2016 | 53 | 2016 |
| Diameter dependent optical emission properties of InAs nanowires grown on Si G Koblmüller, K Vizbaras, S Hertenberger, S Bolte, D Rudolph, J Becker, ... Applied Physics Letters 101 (5), 2012 | 47 | 2012 |
| High power continuous-wave GaSb-based superluminescent diodes as gain chips for widely tunable laser spectroscopy in the 1.95–2.45 μm wavelength range K Vizbaras, E Dvinelis, I Šimonytė, A Trinkūnas, M Greibus, R Songaila, ... Applied Physics Letters 107 (1), 2015 | 43 | 2015 |
| 3.6 μm GaSb-based type-I lasers with quinternary barriers, operating at room temperature K Vizbaras, MC Amann Electron. Lett 47 (17), 980981, 2011 | 36 | 2011 |
| Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7-m Wavelength Range K Kashani-Shirazi, K Vizbaras, A Bachmann, S Arafin, MC Amann IEEE Photonics Technology Letters 21 (16), 1106-1108, 2009 | 35 | 2009 |
| Up to 3 μm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells S Sprengel, C Grasse, K Vizbaras, T Gruendl, MC Amann Applied Physics Letters 99 (22), 2011 | 33 | 2011 |
| Ultra-low resistive GaSb/InAs tunnel junctions K Vizbaras, M Törpe, S Arafin, MC Amann Semiconductor Science and Technology 26 (7), 075021, 2011 | 33 | 2011 |
| Room-temperature type-I GaSb-based lasers in the 3.0-3.7 μm wavelength range K Vizbaras, A Vizbaras, A Andrejew, C Grasse, S Sprengel, MC Amann Novel In-Plane Semiconductor Lasers XI 8277, 184-190, 2012 | 26 | 2012 |
| High-performance mid-infrared GaSb laser diodes for defence and sensing applications A Vizbaras, E Dvinelis, A Trinkūnas, I Šimonyte, M Greibus, M Kaušylas, ... Laser Technology for Defense and Security X 9081, 104-109, 2014 | 25 | 2014 |
| Terahertz pulse generation from (111)-cut InSb and InAs crystals when illuminated by 1.55-μm femtosecond laser pulses I Nevinskas, K Vizbaras, A Trinkūnas, R Butkutė, A Krotkus Optics Letters 42 (13), 2615-2618, 2017 | 22 | 2017 |
| Comprehensive analysis of electrically-pumped GaSb-based VCSELs S Arafin, A Bachmann, K Vizbaras, A Hangauer, J Gustavsson, ... Optics Express 19 (18), 17267-17282, 2011 | 22 | 2011 |
| GaSb swept-wavelength lasers for biomedical sensing applications A Vizbaras, I Šimonytė, S Droz, N Torcheboeuf, A Miasojedovas, ... IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-12, 2019 | 19 | 2019 |
| GaInAs/GaAsSb-based type-II micro-cavity LED with 2–3 μm light emission grown on InP substrate C Grasse, T Gruendl, S Sprengel, P Wiecha, K Vizbaras, R Meyer, ... Journal of crystal growth 370, 240-243, 2013 | 16 | 2013 |
| High-performance single-spatial mode GaSb type-I laser diodes around 2.1 µm A Vizbaras, E Dvinelis, M Greibus, A Trinkunas, D Kovalenkovas, ... Quantum Sensing and Nanophotonic Devices XI 8993, 222-227, 2014 | 14 | 2014 |
| Low-threshold 3 µm GaInAsSb/AlGaInAsSb quantum-well lasers operating in continuous-wave up to 64 C K Vizbaras, A Andrejew, A Vizbaras, C Grasse, S Arafin, MC Amann IPRM 2011-23rd International Conference on Indium Phosphide and Related …, 2011 | 13 | 2011 |
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