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Jinho Ahn
Jinho Ahn
Professor of Materials Science and Engineering, Hanyang University
Verified email at hanyang.ac.kr - Homepage
Title
Cited by
Cited by
Year
High-quality MOSFETs with ultrathin LPCVD gate SiO/sub 2
J Ahn, W Ting, DL Kwong
IEEE electron device letters 13 (4), 186-188, 1992
2291992
Tungsten nanowires and their field electron emission properties
YH Lee, CH Choi, YT Jang, EK Kim, BK Ju, NK Min, JH Ahn
Applied Physics Letters 81 (4), 745-747, 2002
2222002
A simple approach in fabricating chemical sensor using laterally grown multi-walled carbon nanotubes
YT Jang, SI Moon, JH Ahn, YH Lee, BK Ju
Sensors and Actuators B: Chemical 99 (1), 118-122, 2004
1582004
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone
S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ...
ACS nano 6 (3), 2722-2730, 2012
1562012
Realization of gated field emitters for electrophotonic applications using carbon nanotube line emitters directly grown into submicrometer holes
YH Lee, YT Jang, DH Kim, JH Ahn, B Ju
Advanced Materials 13 (7), 479-482, 2001
1312001
Furnace nitridation of thermal SiO/sub 2/in pure N/sub 2/O ambient for ULSI MOS applications
J Ahn, W Ting, DL Kwong
IEEE electron device letters 13 (2), 117-119, 1992
1141992
Microstructure and magnetic properties of nanosized Fe–Co alloy powders synthesized by mechanochemical and mechanical alloying process
BH Lee, BS Ahn, DG Kim, ST Oh, H Jeon, J Ahn, Y Do Kim
Materials Letters 57 (5-6), 1103-1107, 2003
1032003
Effect of NH3 and thickness of catalyst on growth of carbon nanotubes using thermal chemical vapor deposition
YT Jang, JH Ahn, YH Lee, BK Ju
Chemical Physics Letters 372 (5-6), 745-749, 2003
932003
Boronic acid library for selective, reversible near-infrared fluorescence quenching of surfactant suspended single-walled carbon nanotubes in response to glucose
K Yum, JH Ahn, TP McNicholas, PW Barone, B Mu, JH Kim, RM Jain, ...
Acs Nano 6 (1), 819-830, 2012
872012
Resistance switching characteristics for nonvolatile memory operation of binary metal oxides
IS Park, KR Kim, S Lee, J Ahn
Japanese journal of applied physics 46 (4S), 2172, 2007
762007
MOS characteristics of ultrathin SiO/sub 2/prepared by oxidizing Si in N/sub 2/O
W Ting, GQ Lo, J Ahn, TY Chu, DL Kwong
IEEE electron device letters 12 (8), 416-418, 1991
751991
Electron beam lithography of phase mask gratings for near field holographic production of optical fibre gratings
X Liu, JS Aitchison, RM De La Rue, S Thoms, L Zhang, JAR Williams, ...
Microelectronic engineering 35 (1-4), 345-348, 1997
681997
Transduction of glycan–lectin binding using near-infrared fluorescent single-walled carbon nanotubes for glycan profiling
NF Reuel, JH Ahn, JH Kim, J Zhang, AA Boghossian, LK Mahal, ...
Journal of the American Chemical Society 133 (44), 17923-17933, 2011
632011
Study of the composition of thin dielectrics grown on Si in a pure N2O ambient
TY Chu, W Ting, JH Ahn, S Lin, DL Kwong
Applied physics letters 59 (12), 1412-1414, 1991
611991
Synthesis of Ag-ZnO core-shell nanoparticles with enhanced photocatalytic activity through atomic layer deposition
S Seong, IS Park, YC Jung, T Lee, SY Kim, JS Park, JH Ko, J Ahn
Materials & Design 177, 107831, 2019
602019
Direct fermentation route for the production of acrylic acid
HS Chu, JH Ahn, J Yun, IS Choi, TW Nam, KM Cho
Metabolic engineering 32, 23-29, 2015
582015
Dielectric Stacking Effect ofandin Metal–Insulator–Metal Capacitor
IS Park, K Ryu, J Jeong, J Ahn
IEEE Electron Device Letters 34 (1), 120-122, 2012
542012
High quality ultrathin gate dielectrics formation by thermal oxidation of Si in N 2 O
J Ahn, W Ting, T Chu, SN Lin, DL Kwong
Journal of the Electrochemical Society 138 (9), L39, 1991
541991
Oxynitride gate dielectrics for p/sup+/-polysilicon gate MOS devices
AB Joshi, J Ahn, DL Kwong
IEEE electron device letters 14 (12), 560-562, 1993
521993
Atomic layer deposition of Y 2 O 3 films using heteroleptic liquid (iPrCp) 2 Y (iPr-amd) precursor
IS Park, YC Jung, S Seong, J Ahn, J Kang, W Noh, C Lansalot-Matras
Journal of Materials Chemistry C 2 (43), 9240-9247, 2014
512014
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