Pressure dependences of the elastic constants of PbTe, SnTe and Ge0. 08Sn0. 92Te AJ Miller, GA Saunders, YK Yogurtcu Journal of Physics C: Solid State Physics 14 (11), 1569, 1981 | 127 | 1981 |
Urbach–Martienssen's tails in layered semiconductor GaSe B Abay, HS Güder, YK Yoğurtçu Solid state communications 112 (9), 489-494, 1999 | 91 | 1999 |
Barrier characteristics of Cd/p-GaTe Schottky diodes based on I–V–T measurements B Abay, G Çankaya, HS Güder, H Efeoglu, YK Yogurtcu Semiconductor science and technology 18 (2), 75, 2002 | 76 | 2002 |
Temperature dependence of the optical energy gap and Urbach–Martienssen’s tail in the absorption spectra of the layered semiconductor Tl2GaInSe4 B Abay, HS Güder, H Efeoğlu, YK Yoğurtçu Journal of Physics and Chemistry of Solids 62 (4), 747-752, 2001 | 69 | 2001 |
Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer E Ayyildiz, A Türüt, H Efeoğlu, S Tüzemen, M Sağlam, YK Yoğurtçu Solid-State Electronics 39 (1), 83-87, 1996 | 61 | 1996 |
Elastic behaviour of YAG under pressure YK Yogurtcu, AJ Miller, GA Saunders Journal of Physics C: Solid State Physics 13 (36), 6585, 1980 | 59 | 1980 |
The second-and third-order elastic constants of amorphous arsenic MP Brassington, WA Lambson, AJ Miller, GA Saunders, YK Yogurtcu Philosophical Magazine B 42 (1), 127-148, 1980 | 54 | 1980 |
Photoluminescence characterization of GaTe single crystals HS Güder, B Abay, H Efeoğlu, YK Yoğurtçu Journal of luminescence 93 (3), 243-248, 2001 | 44 | 2001 |
Poisson's ratio limits and effects of hydrostatic pressure on the elastic behaviour of Sm1-xYxS alloys in the intermediate valence state T Hailing, GA Saunders, YK Yogurtcu, H Bach, S Methfessel Journal of Physics C: Solid State Physics 17 (26), 4559, 1984 | 38 | 1984 |
Excitonic absorption and Urbach-Martienssen's tails in Er-doped and undoped n-type InSe B Abay, HS Güder, H Efeoglu, YK Yogurtçu Journal of Physics D: Applied Physics 32 (22), 2942, 1999 | 34 | 1999 |
Temperature dependence of galvanomagnetic properties for Gd doped and undoped -type GaSe B Gürbulak, M Yildirim, S Tüzemen, H Efeoǧlu, YK Yoǧurtçu Journal of applied physics 83 (4), 2030-2034, 1998 | 33 | 1998 |
Growth and temperature dependence of optical properties of Er doped and undoped n-Type InSe B Gürbulak, M Yildirim, A Ateş, S Doğan, YK Yoğurtçu Japanese journal of applied physics 38 (9R), 5133, 1999 | 32 | 1999 |
Urbach‐Martienssen Tails in the Absorption Spectra of Layered Ternary Semiconductor TlGaS2 B Abay, HS Güder, H Efeoğlu, YK Yoğurtçu physica status solidi (b) 227 (2), 469-476, 2001 | 29 | 2001 |
Influence of temperature and phase transitions on the Urbach’s tails of absorption spectra for single crystals B Abay, HS Güder, H Efeoǧlu, YK Yoǧurtçu Journal of applied physics 84 (7), 3872-3879, 1998 | 29 | 1998 |
Magnetic studies on electrodeposited Cu1− xCox alloy films ÖF Bakkaloğlu, IH Karahan, H Efeoğlu, M Yıldırım, U Çevik, YK Yoğurtcu Journal of magnetism and magnetic materials 190 (3), 193-198, 1998 | 25 | 1998 |
Urbach–Martienssen tails in Er-doped and undoped n-type InSe B Abay, HS Güder, H Efeoğlu, YK Yoğurtçu Physica B: Condensed Matter 254 (1-2), 148-155, 1998 | 25 | 1998 |
The elastic behaviour of orthorhombic sulphur under pressure GA Saunders, YK Yoḡurtçu, JE Macdonald, GS Pawley Proceedings of the Royal Society of London. A. Mathematical and Physical …, 1986 | 25 | 1986 |
Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe (: Er) Schottky contacts B Abay, Y Onganer, M Saǧlam, H Efeoǧlu, A Türüt, YK Yoǧurtçu Microelectronic Engineering 51, 689-693, 2000 | 24 | 2000 |
Electrothermal investigation of the switching effect in p-Type TllnSe2, TllnTe2, and TIGaTe2 chain chalcogenide semiconductors B Abay, B Gürbulak, M Yildirim, H Efeoglu, S Tuzemen, YK Yogurtcu Journal of electronic materials 25, 1054-1059, 1996 | 24 | 1996 |
Excitonic absorption and Urbach-Martienssen tails in Gd-doped and undoped p-type GaSe B Abay, HS Güder, H Efeoglu, YK Yogurtcu Semiconductor science and technology 15 (6), 535, 2000 | 23 | 2000 |