| Organic light emitting display (OLED) and its method of fabrication HS Shin, JK Jeong, YG Mo, DU Jin US Patent 7,663,302, 2010 | 3466 | 2010 |
| Thin film transistor and organic light-emitting display device having the thin film transistor JS Park, YG Mo, JK Jeong, JH Jeong, HS Shin, HJ Lee US Patent App. 12/076,216, 2008 | 3459 | 2008 |
| Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water JS Park, JK Jeong, HJ Chung, YG Mo, HD Kim Applied Physics Letters 92 (7), 072104, 2008 | 1138 | 2008 |
| Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment JS Park, JK Jeong, YG Mo, HD Kim, SI Kim Applied Physics Letters 90 (26), 262106, 2007 | 941 | 2007 |
| Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors JK Jeong, H Won Yang, JH Jeong, YG Mo, HD Kim Applied Physics Letters 93 (12), 123508, 2008 | 879 | 2008 |
| 3.1: Distinguished Paper: 12.1‐Inch WXGA AMOLED Display Driven by Indium‐Gallium‐Zinc Oxide TFTs Array JK Jeong, JH Jeong, JH Choi, JS Im, SH Kim, HW Yang, KN Kang, ... SID Symposium Digest of Technical Papers 39 (1), 1-4, 2008 | 830 | 2008 |
| Thin film transistor, method of manufacturing the same and flat panel display device having the same JK Jeong, JH Jeong, MK Kim, T Ahn, YG Mo, HW Yang US Patent 8,148,779, 2012 | 630* | 2012 |
| Amorphous Indium-Gallium-Zinc Oxide TFTs and their application for large size AMOLED J Park, JK Jeong, YG Mo, HD Kim Am-FPd 8, 275-278, 2008 | 615 | 2008 |
| Amorphous Oxide TFT Backplanes for Large Size AMOLED Displays YG Mo, JK Jeong, HD Kim, HK Chung 15th International Display Workshops, IDW'08, 2008 | 612 | 2008 |
| High mobility bottom gate InGaZnO thin film transistors with etch stopper M Kim, JH Jeong, HJ Lee, TK Ahn, HS Shin, JS Park, JK Jeong, YG Mo, ... Applied Physics Letters 90 (21), 212114, 2007 | 576 | 2007 |
| Thin film transistor, method of manufacturing the same and flat panel display device having the same MK Kim, JH Jeong, T Ahn, JK Jeong, YG Mo, JS Park, HJ Chung, KS Kim, ... US Patent 8,541,258, 2013 | 453 | 2013 |
| High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel JK Jeong, JH Jeong, HW Yang, JS Park, YG Mo, HD Kim Applied Physics Letters 91 (11), 113505, 2007 | 429 | 2007 |
| Thin film transistor, display device, including the same, and associated methods JH Jeong, JK Jeong, YG Mo, HW Yang US Patent 8,058,645, 2011 | 417 | 2011 |
| The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors KH Lee, JS Jung, KS Son, JS Park, TS Kim, R Choi, JK Jeong, JY Kwon, ... Applied Physics Letters 95 (23), 232106, 2009 | 338 | 2009 |
| Novel ZrInZnO Thin‐film transistor with excellent stability JS Park, KS Kim, YG Park, YG Mo, HD Kim, JK Jeong Advanced Materials 21 (3), 329-333, 2009 | 296 | 2009 |
| Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors KH Ji, JI Kim, HY Jung, SY Park, R Choi, UK Kim, CS Hwang, D Lee, ... Applied Physics Letters 98 (10), 103509, 2011 | 282 | 2011 |
| The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays JK Jeong Semiconductor Science and Technology 26 (3), 034008, 2011 | 274 | 2011 |
| Comparison of the effects of Ar and plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors B Du Ahn, HS Shin, HJ Kim, JS Park, JK Jeong Applied Physics Letters 93 (20), 203506, 2008 | 225 | 2008 |
| Origin of subthreshold swing improvement in amorphous indium gallium zinc oxide transistors JH Jeong, HW Yang, JS Park, JK Jeong, YG Mo, HD Kim, J Song, ... Electrochemical and Solid-State Letters 11 (6), H157, 2008 | 217 | 2008 |
| Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors WithandGate Dielectrics KH Ji, JI Kim, YG Mo, JH Jeong, S Yang, CS Hwang, SHK Park, MK Ryu, ... IEEE electron device letters 31 (12), 1404-1406, 2010 | 200 | 2010 |
Yeon Gon MoR&D Center @ Samsung Display Inc.Verified email at samsung.com
