| Unipolar Switching Behaviors of RTO RRAM WC Chien, YC Chen, EK Lai, YD Yao, P Lin, SF Horng, J Gong, TH Chou, ... IEEE electron device letters 31 (2), 126-128, 2010 | 122 | 2010 |
| A forming-free WOxresistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability WC Chien, YR Chen, YC Chen, ATH Chuang, FM Lee, YY Lin, EK Lai, ... 2010 International Electron Devices Meeting, 19.2. 1-19.2. 4, 2010 | 112 | 2010 |
| Aluminum copper oxide based memory devices and methods for manufacture WC Chien, KP Chang, YC Chen, EK Lai, KY Hsieh US Patent 8,067,815, 2011 | 103 | 2011 |
| 3D cross-point phase-change memory for storage-class memory HY Cheng, F Carta, WC Chien, HL Lung, MJ BrightSky Journal of Physics D: Applied Physics 52 (47), 473002, 2019 | 83 | 2019 |
| Graded metal oxide resistance based semiconductor memory device MD Lee, EK Lai, KY Hsieh, WC Chien, CH Yeh US Patent 8,488,362, 2013 | 82 | 2013 |
| Graded metal oxide resistance based semiconductor memory device MD Lee, EK Lai, KY Hsieh, WC Chien, CH Yeh US Patent 8,488,362, 2013 | 82 | 2013 |
| Resistive memory structure with buffer layer WC Chien, KP Chang, EK Lai, KY Hsieh US Patent 7,777,215, 2010 | 73 | 2010 |
| Multi-layer sidewall WOXresistive memory suitable for 3D ReRAM WC Chien, FM Lee, YY Lin, MH Lee, SH Chen, CC Hsieh, EK Lai, HH Hui, ... 2012 Symposium on VLSI technology (VLSIT), 153-154, 2012 | 70 | 2012 |
| An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM HY Cheng, WC Chien, IT Kuo, EK Lai, Y Zhu, JL Jordan-Sweet, A Ray, ... 2017 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2017 | 55 | 2017 |
| Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory HY Cheng, WC Chien, IT Kuo, CW Yeh, L Gignac, W Kim, EK Lai, YF Lin, ... 2018 IEEE International Electron Devices Meeting (IEDM), 37.3. 1-37.3. 4, 2018 | 50 | 2018 |
| Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material HY Cheng, WC Chien, M BrightSky, YH Ho, Y Zhu, A Ray, R Bruce, W Kim, ... 2015 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2015 | 50 | 2015 |
| Multi-level 40nm WOX resistive memory with excellent reliability WC Chien, MH Lee, FM Lee, YY Lin, HL Lung, KY Hsieh, CY Lu 2011 International electron devices meeting, 31.5. 1-31.5. 4, 2011 | 47 | 2011 |
| Resistive RAM and fabrication method IY Chen, WC Chien US Patent 9,680,095, 2017 | 45 | 2017 |
| Operation method for multi-level switching of metal-oxide based RRAM WC Chien, KP Chang, YC Chen, EK Lai, KY Hsieh US Patent 7,960,224, 2011 | 43 | 2011 |
| A study on OTS-PCM pillar cell for 3-D stackable memory WC Chien, CW Yeh, RL Bruce, HY Cheng, IT Kuo, CH Yang, A Ray, ... IEEE Transactions on Electron Devices 65 (11), 5172-5179, 2018 | 36 | 2018 |
| Operating method of electrical pulse voltage for RRAM application KP Chang, YC Chen, WC Chien, EK Lai US Patent 8,134,865, 2012 | 35 | 2012 |
| Nonvolatile memory device having a transistor connected in parallel with a resistance switching device YC Chen, WC Chien, FM Lee US Patent 8,331,127, 2012 | 32 | 2012 |
| Verification algorithm for metal-oxide resistive memory WC Chien, MH Lee, YR Chen US Patent 8,699,258, 2014 | 29 | 2014 |
| A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM WC Chien, YC Chen, EK Lai, FM Lee, YY Lin, ATH Chuang, KP Chang, ... Applied Physics A 102, 901-907, 2011 | 27 | 2011 |
| Enhancement and inverse behaviors of magnetoimpedance in a magnetotunneling junction by driving frequency WC Chien, CK Lo, LC Hsieh, YD Yao, XF Han, ZM Zeng, TY Peng, P Lin Applied physics letters 89 (20), 2006 | 27 | 2006 |
