| Systematic study of anodic etching of highly doped N-type 4H-SiC in various HF based electrolytes G Gautier, J Biscarrat, D Valente, T Defforge, A Gary, F Cayrel Journal of The Electrochemical Society 160 (9), D372, 2013 | 24 | 2013 |
| Normally-OFF 650V GaN-on-Si MOSc-HEMT transistor: benefits of the fully recessed gate architecture C Le Royer, B Mohamad, J Biscarrat, L Vauche, R Escoffier, J Buckley, ... 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 16 | 2022 |
| Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC X Song, J Biscarrat, JF Michaud, F Cayrel, M Zielinski, T Chassagne, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011 | 16 | 2011 |
| Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT AG Viey, W Vandendaele, MA Jaud, L Gerrer, X Garros, J Cluzel, S Martin, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2020 | 14 | 2020 |
| Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function RK Kammeugne, C Leroux, J Cluzel, L Vauche, C Le Royer, ... Solid-State Electronics 184, 108078, 2021 | 12 | 2021 |
| On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes T Lorin, W Vandendaele, R Gwoziecki, Y Baines, JRM Biscarrat, MA Jaud, ... IEEE Journal of the Electron Devices Society 6, 956-964, 2018 | 11 | 2018 |
| Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact Y Baines, J Buckley, J Biscarrat, G Garnier, M Charles, W Vandendaele, ... Scientific Reports 7 (1), 8177, 2017 | 11 | 2017 |
| Influence of carbon on pBTI degradation in GaN-on-Si E-mode MOSc-HEMT AG Viey, W Vandendaele, MA Jaud, L Gerrer, X Garros, J Cluzel, S Martin, ... IEEE Transactions on Electron Devices 68 (4), 2017-2024, 2021 | 10 | 2021 |
| Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method RK Kammeugne, C Leroux, J Cluzel, L Vauche, C Le Royer, R Gwoziecki, ... IEEE Transactions on Electron Devices 67 (11), 4649-4653, 2020 | 10 | 2020 |
| Study on the difference between ID (VG) and C (VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT AG Viey, W Vandendaele, MA Jaud, J Coignus, J Cluzel, A Krakovinsky, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2021 | 9 | 2021 |
| A novel insight on interface traps density (Dit) extraction in GaN-on-Si MOS-c HEMTs W Vandendaele, S Martin, MA Jaud, A Krakovinsky, L Vauche, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2020 | 9 | 2020 |
| Y-function based methodology for accurate statistical extraction of HEMT device parameters for GaN technology RK Kammeugne, C Leroux, J Cluzel, L Vauche, C Le Royer, R Gwoziecki, ... 2020 Joint International EUROSOI Workshop and International Conference on …, 2020 | 9 | 2020 |
| ICP etching of 4H-SiC substrates J Biscarrat, JF Michaud, E Collard, D Alquier Materials Science Forum 740, 825-828, 2013 | 9 | 2013 |
| Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers J Biscarrat, R Gwoziecki, Y Baines, J Buckley, C Gillot, W Vandendaele, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 8 | 2018 |
| Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC J Biscarrat, X Song, JF Michaud, F Cayrel, M Portail, M Zielinski, ... Materials Science Forum 711, 179-183, 2012 | 7 | 2012 |
| Investigation on interface charges in SiN/AlxGa1− xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors B Rrustemi, MA Jaud, F Triozon, C Piotrowicz, W Vandendaele, C Leroux, ... Journal of Applied Physics 130 (10), 2021 | 6 | 2021 |
| Observations of Macroporous Gallium Nitride Electrochemically Etched from High Doped Single Crystal Wafers in HF Based Electrolytes G Gautier, D Valente, J Biscarrat, A Yvon ECS Journal of Solid State Science and Technology 2 (4), P146, 2013 | 6 | 2013 |
| Dose influence on physical and electrical properties of nitrogen implantation in 3C-SiC on Si X Song, J Biscarrat, AE Bazin, JF Michaud, F Cayrel, M Zielinski, ... Materials Science Forum 711, 154-158, 2012 | 6 | 2012 |
| Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts A Chanuel, Y Gobil, CL Hsu, M Charles, M Coig, J Biscarrat, F Aussenac, ... IEEE Transactions on Electron Devices 69 (10), 5530-5535, 2022 | 5 | 2022 |
| Aluminum implantation in 4H-SiC: physical and electrical properties JF Michaud, X Song, J Biscarrat, F Cayrel, E Collard, D Alquier Materials Science Forum 740, 581-584, 2013 | 5 | 2013 |
Gael GautierINSA Centre Val de Loire, GREMANVerified email at univ-tours.fr
