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Nuo Xu
Nuo Xu
TSMC; Samsung; IMEC; Synopsys; UC Berkeley
Verified email at eecs.berkeley.edu
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Cited by
Year
Characteristics and mechanism of conduction/set process in TiN∕ ZnO∕ Pt resistance switching random-access memories
N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu
Applied Physics Letters 92 (23), 2008
4662008
Reconfigurable Skyrmion Logic Gates
S Luo, M Song, X Li, Y Zhang, J Hong, X Yang, X Zou, N Xu, L You
ACS Nano Letters, 2018
2592018
Oxide-based RRAM switching mechanism: A new ion-transport-recombination model
B Gao, S Yu, N Xu, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1762008
Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention
N Xu, LF Liu, X Sun, C Chen, Y Wang, DD Han, XY Liu, RQ Han, JF Kang, ...
Semiconductor science and technology 23 (7), 075019, 2008
1692008
Resistive Switching in Films for Nonvolatile Memory Application
X Sun, B Sun, L Liu, N Xu, X Liu, R Han, J Kang, G Xiong, TP Ma
IEEE electron device letters 30 (4), 334-336, 2009
1302009
A unified physical model of switching behavior in oxide-based RRAM
N Xu, B Gao, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu
2008 Symposium on VLSI Technology, 100-101, 2008
1172008
Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices
B Sun, YX Liu, LF Liu, N Xu, Y Wang, XY Liu, RQ Han, JF Kang
Journal of Applied Physics 105 (6), 2009
1122009
Mr-gnn: Multi-resolution and dual graph neural network for predicting structured entity interactions
N Xu, P Wang, L Chen, J Tao, J Zhao
arXiv preprint arXiv:1905.09558, 2019
952019
A spin–orbit‐torque memristive device
S Zhang, S Luo, N Xu, Q Zou, M Song, J Yun, Q Luo, Z Guo, R Li, W Tian, ...
Advanced Electronic Materials 5 (4), 1800782, 2019
632019
Hybrid CMOS/BEOL-NEMS technology for ultra-low-power IC applications
N Xu, J Sun, IR Chen, L Hutin, Y Chen, J Fujiki, C Qian, TJK Liu
Electron Devices Meeting (IEDM), 2014 IEEE International, 28.8. 1-28.8. 4, 2014
562014
Effectiveness of stressors in aggressively scaled FinFETs
N Xu, B Ho, M Choi, V Moroz, TJK Liu
IEEE Transactions on Electron Devices 59 (6), 1592-1598, 2012
512012
Fully Functional Logic‐In‐Memory Operations Based on a Reconfigurable Finite‐State Machine Using a Single Memristor
N Xu, KJ Yoon, KM Kim, L Fang, CS Hwang
Advanced Electronic Materials 4 (11), 1800189, 2018
462018
ZrO2 Ferroelectric FET for Non-volatile Memory Application
H Liu, C Wang, G Han, J Li, Y Peng, Y Liu, X Wang, N Zhong, C Duan, ...
IEEE Electron Device Letters, 2019
422019
Voltage-Controlled Skyrmion Memristor for Energy-Efficient Synapse Applications
S Luo, N Xu, Z Guo, Y Zhang, J Hong, L You
IEEE Electron Device Letters, 2019
422019
Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects
XW Jiang, J Gong, N Xu, SS Li, J Zhang, Y Hao, LW Wang
Applied Physics Letters 104 (2), 2014
392014
Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs
H Jiang, X Liu, N Xu, Y He, G Du, X Zhang
IEEE Electron Device Letters 36 (12), 1258-1260, 2015
372015
Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices
RQH Li-Feng Liu, Jin-Feng Kang, Nuo Xu, Xiao Sun, Chen Chen, Bing Sun, Yi ...
Japanese Journal of Applied Physics 47 (4), 2701-2703, 2008
362008
Carrier-mobility enhancement via strain engineering in future thin-body MOSFETs
N Xu, B Ho, F Andrieu, L Smith, BY Nguyen, O Weber, T Poiroux, ...
IEEE electron device letters 33 (3), 318-320, 2012
352012
STT-MRAM Design Technology Co-optimization for Hardware Neural Networks
N Xu, Y Lu, W Qi, Z Jiang, X Peng, F Chen, J Wang, W Choi, S Yu, ...
Electron Devices Meeting (IEDM), 2018 IEEE International, 2018
342018
A unified approach for trap-aware device/circuit co-design in nanoscale CMOS technology
R Wang, M Luo, S Guo, R Huang, C Liu, J Zou, J Wang, J Wu, N Xu, ...
2013 IEEE International Electron Devices Meeting, 33.5. 1-33.5. 4, 2013
342013
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