Strain-engineering in nanowire field-effect transistors at 3 nm technology node TP Dash, S Dey, S Das, E Mohapatra, J Jena, CK Maiti Physica E: Low-dimensional Systems and Nanostructures 118, 113964, 2020 | 28 | 2020 |
Reactive nitrogen species and male reproduction: Physiological and pathological aspects S Dutta, P Sengupta, S Das, P Slama, S Roychoudhury International Journal of Molecular Sciences 23 (18), 10574, 2022 | 23 | 2022 |
Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric D Pradhan, S Das, TP Dash Superlattices and Microstructures 98, 203-207, 2016 | 21 | 2016 |
Design study of gate-all-around vertically stacked nanosheet FETs for sub-7nm nodes E Mohapatra, TP Dash, J Jena, S Das, CK Maiti SN Applied Sciences 3, 1-13, 2021 | 20 | 2021 |
Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistors E Mohapatra, TP Dash, J Jena, S Das, CK Maiti Physica Scripta 95 (6), 065808, 2020 | 20 | 2020 |
Vertically-stacked silicon nanosheet field effect transistors at 3nm technology nodes TP Dash, S Dey, E Mohapatra, S Das, J Jena, CK Maiti 2019 Devices for Integrated Circuit (DevIC), 99-103, 2019 | 17 | 2019 |
Design and simulation of vertically-stacked nanowire transistors at 3 nm technology nodes S Dey, J Jena, E Mohapatra, TP Dash, S Das, CK Maiti Physica Scripta 95 (1), 014001, 2019 | 16 | 2019 |
Stress-induced variability studies in tri-gate FinFETs with source/drain stressor at 7 nm technology nodes TP Dash, J Jena, E Mohapatra, S Dey, S Das, CK Maiti Journal of Electronic Materials 48 (8), 5348-5362, 2019 | 15 | 2019 |
Deposition of composition‐controlled silicon oxynitride films by dual ion beam sputtering SK Ray, S Das, CK Maiti, SK Lahiri, NB Chakrabarti Applied physics letters 58 (22), 2476-2478, 1991 | 12 | 1991 |
Performance comparison of strained-SiGe and bulk-Si channel FinFETs at 7 nm technology node TP Dash, S Dey, S Das, J Jena, E Mohapatra, CK Maiti Journal of Micromechanics and Microengineering 29 (10), 104001, 2019 | 11 | 2019 |
Performance and opportunities of gate-all-around vertically-stacked nanowire transistors at 3nm technology nodes S Dey, TP Dash, E Mohapatra, J Jena, S Das, CK Maiti 2019 Devices for Integrated Circuit (DevIC), 94-98, 2019 | 10 | 2019 |
Electron mobility modeling in strained-Si n-MOSFETs using TCAD TP Dash, D Pradhan, S Das, RK Nanda 2016 IEEE Annual India Conference (INDICON), 1-4, 2016 | 10 | 2016 |
Optimization of Cutting Parameters for AISI H13 Tool Steel by Taguchi Method and Artificial Neural Network H Pathak, S Das, R Doley, S Kashyap International Journal of Materials Forming and Machining Processes (IJMFMP …, 2015 | 10 | 2015 |
Strain-engineering in AlGaN/GaN HEMTs: impact of silicon nitride passivation layer on electrical performance S Das, TP Dash, D Jena, E Mohapatra, CK Maiti Physica Scripta 96 (12), 124074, 2021 | 8 | 2021 |
Intimate Labor at Biomedical Frontlines: Situated Knowledges of Female Community Health Workers in the Management of COVID-19 in India S Das, S Das Catalyst: Feminism, Theory, Technoscience 7 (1), 2021 | 8 | 2021 |
Performance Analysis of Sub-10nm Vertically Stacked Gate-All-Around FETs E Mohapatra, TP Dash, J Jena, S Das, CK Maiti 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 331-334, 2020 | 6 | 2020 |
Fin shape dependence of electrostatics and variability in FinFETs J Jena, TP Dash, E Mohapatra, S Dey, S Das, CK Maiti Journal of Electronic Materials 48 (10), 6742-6752, 2019 | 6 | 2019 |
Beyond silicon: strained-SiGe channel FinFETs RK Nanda, TP Dash, S Das, CK Maiti 2015 International Conference on Man and Machine Interfacing (MAMI), 1-4, 2015 | 6 | 2015 |
FinFET-Based Inverter Design and Optimization at 7 Nm Technology Node J Jena, D Jena, E Mohapatra, S Das, TP Dash Silicon 14 (16), 10781-10794, 2022 | 5 | 2022 |
Performance analysis of Si-channel nanosheet FETs with strained SiGe source/drain stressors E Mohapatra, TP Dash, J Jena, S Das, J Nanda, CK Maiti Advances in Electrical Control and Signal Systems: Select Proceedings of …, 2020 | 5 | 2020 |