P-channel oxide thin film transistors using solution-processed copper oxide SY Kim, CH Ahn, JH Lee, YH Kwon, S Hwang, JY Lee, HK Cho ACS applied materials & interfaces 5 (7), 2417-2421, 2013 | 140 | 2013 |
Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction BO Jung, YH Kwon, DJ Seo, DS Lee, HK Cho Journal of crystal growth 370, 314-318, 2013 | 69 | 2013 |
A VGA Indirect Time-of-Flight CMOS Image Sensor With 4-Tap 7- m Global-Shutter Pixel and Fixed-Pattern Phase Noise Self-Compensation MS Keel, YG Jin, Y Kim, D Kim, Y Kim, M Bae, B Chung, S Son, H Kim, ... IEEE Journal of Solid-State Circuits 55 (4), 889-897, 2019 | 50 | 2019 |
Effects of In or Ga doping on the growth behavior and optical properties of Zn O nanorods fabricated by hydrothermal process GC Park, SM Hwang, JH Choi, YH Kwon, HK Cho, SW Kim, JH Lim, J Joo physica status solidi (a) 210 (8), 1552-1556, 2013 | 47 | 2013 |
Biepitaxial Growth of High-Quality Semiconducting NiO Thin Films on (0001) Al2O3 Substrates: Microstructural Characterization and Electrical Properties JH Lee, YH Kwon, BH Kong, JY Lee, HK Cho Crystal growth & design 12 (5), 2495-2500, 2012 | 47 | 2012 |
7.1 A 4-tap 3.5 ¥ìm 1.2 Mpixel indirect time-of-flight CMOS image sensor with peak current mitigation and multi-user interference cancellation MS Keel, D Kim, Y Kim, M Bae, M Ki, B Chung, S Son, H Lee, H Jo, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 106-108, 2021 | 37 | 2021 |
Liquid–solid spinodal decomposition mediated synthesis of Sb2Se3 nanowires and their photoelectric behavior YH Kwon, M Jeong, HW Do, JY Lee, HK Cho nanoscale 7, 12913, 2015 | 34 | 2015 |
Highly sensible ZnO nanowire ultraviolet photodetectors based on mechanical schottky contact DC Kim, BO Jung, YH Kwon, HK Cho Journal of the Electrochemical Society 159 (1), K10, 2011 | 34 | 2011 |
Low-Temperature Processable High-Performance Electrochemically Deposited p-Type Cuprous Oxides Achieved by Incorporating a Small Amount of Antimony SK Baek, YH Kwon, JH Shin, HS Lee, HK Cho Advanced Functional Materials, 2015 | 33 | 2015 |
A 640¡¿ 480 indirect time-of-flight CMOS image sensor with 4-tap 7-¥ìm global-shutter pixel and fixed-pattern phase noise self-compensation scheme MS Keel, YG Jin, Y Kim, D Kim, Y Kim, M Bae, B Chung, S Son, H Kim, ... 2019 Symposium on VLSI Circuits, C258-C259, 2019 | 26 | 2019 |
Crystal growth direction-controlled antimony selenide thin film absorbers produced using an electrochemical approach and intermediate thermal treatment YH Kwon, YB Kim, M Jeong, HW Do, HK Cho, JY Lee Solar Energy Materials and Solar Cells 172, 11-17, 2017 | 24 | 2017 |
All oxide ultraviolet photodetectors based on a p-Cu2O film/n-ZnO heterostructure nanowires YH Ok, KR Lee, BO Jung, YH Kwon, HK Cho Thin Solid Films 570, 282-287, 2014 | 22 | 2014 |
A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-¥ìm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation MS Keel, D Kim, Y Kim, M Bae, M Ki, B Chung, S Son, H Lee, SC Shin, ... IEEE Journal of Solid-State Circuits 56 (11), 3209-3219, 2021 | 19 | 2021 |
Correlation between electrical properties and point defects in NiO thin films YH Kwon, SH Chun, JH Han, HK Cho Metals and Materials International 18, 1003-1007, 2012 | 19 | 2012 |
Copper indium selenide water splitting photoanodes with artificially designed heterophasic blended structure and their high photoelectrochemical performances JS Kim, SK Baek, YB Kim, HW Do, YH Kwon, SW Cho, YD Yun, JH Yoon, ... Nano Energy 46, 1-10, 2018 | 17 | 2018 |
Transparent and flexible oxide thin-film-transistors using an aluminum oxide gate insulator grown at low temperature by atomic layer deposition CH Woo, CH Ahn, YH Kwon, JH Han, HK Cho Metals and Materials International 18, 1055-1060, 2012 | 17 | 2012 |
A 2.8 ¥ìm pixel for time of flight CMOS image sensor with 20 ke-full-well capacity in a tap and 36% quantum efficiency at 940 nm wavelength Y Kwon, S Seo, S Cho, SH Choi, T Hwang, Y Kim, YG Jin, Y Oh, MS Keel, ... 2020 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2020 | 16 | 2020 |
Controllable band-gap engineering of the ternary MgxNi1− xO thin films deposited by radio frequency magnetron sputtering for deep ultra-violet optical devices YH Kwon, SH Chun, HK Cho Thin Solid Films 529, 417-420, 2013 | 15 | 2013 |
A 4-tap global shutter pixel with enhanced IR sensitivity for VGA time-of-flight CMOS image sensors T Jung, Y Kwon, S Seo, MS Keel, C Lee, SH Choi, SY Kim, S Cho, Y Kim, ... Electronic Imaging 32, 1-6, 2020 | 13 | 2020 |
Three-dimensional (3D) image sensors including polarizer, and depth correction methods and 3D image generation methods based on 3D image sensors YG Jin, YC Kim, CR Moon, Y Kwon, T Jung US Patent 11,204,415, 2021 | 11 | 2021 |